PTFB182557SH [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET;


型号：	PTFB182557SH
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET
文件：	总11页 (文件大小：706K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFB182557SH

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET

250 W, 28 V, 1805 – 1880 MHz

Description

The PTFB182557SH is a 250-watt LDMOS FET speciﬁcally designed

for use in Doherty cellular power ampliﬁer applications in the 1805

to 1880 MHz frequency band. Input and output matching has been

optimized for maximum performance as the peak side transistor in

Doherty ampliﬁers. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PTFB182557SH

Package H-34288G-4/2

Features

Single-carrier WCDMA 3GPP Drive-up

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz,

3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz

•

Broadband internal matching

Optimized for use as peak side in Doherty ampli-

ﬁers

•

Typical two-carrier WCDMA performance,

1842 MHz, 28 V, 3GPP signal, PAR = 8 dB,

10 MHz carrier spacing

- Average output power = 75 W

- Linear gain = 18.5 dB

- Efﬁciency = 31%

- Intermodulation distortion = –31 dBc

- Adjacent channel power= –36 dBc

-10

-20

-30

-40

-50

-60

Efficiency

ACP Up

ACP Low

•

Typical CW performance, 1842 MHz, 28 V

- Output power at P

- Efﬁciency = 49%

- Gain = 18 dB

= 250 W

1dB

Capable of handling 10:1 VSWR @28 V, 240 W

(CW) output power

•

Integrated ESD protection

Low thermal resistance

Output Power Avg (dBm)

Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon test ﬁxture)

= 28 V, I = 1350 mA, P = 60 W avg, ƒ = 1842.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

—

Unit

Linear Gain

Drain Efﬁciency

h_D

32.5

–33

—

Adjacent Channel Power Ratio

ACPR

—

–31

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet – DRAFT ONLY 1 of 11

Rev. 02, 2012-06-25

PTFB182557SH

Confidential, Limited Internal Distribution

DC Characteristics

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

BR)DSS

= 28 V, V = 0 V

—

µA

DSS

= 63 V, V = 0 V

—

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

= 10 V, V = 0.1 V

—

0.05

2.8

—

DS(on)

= 28 V, I

= 1.4 A

2.3

—

3.3

= 10 V, V = 0 V

GSS

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

DSS

–6 to +10

200

°C

STG

–40 to +150

0.232

°C

Thermal Resistance (T

= 70°C, 200 W CW)

qJC

°C/W

CASE

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PTFB182557SH V1 R250

PTFB182557SHV1R250XTMA1

H-34288G-4/2, earless ﬂange

Tape & Reel, 250 pcs

Data Sheet – DRAFT ONLY

2 of 11

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PTFB182557SH

Confidential, Limited Internal Distribution

Typical Performance (data taken in a production test ﬁxture)

Single-carrier WCDMA 3GPP Drive-up

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz,

3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz

Two-tone Drive-up (over temperature)

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz

Gain

Efficiency

Gain

PAR @ 0.01% CCDF

-10

-30

-50

-20°C

+25°C

ACP Low

Efficiency

+85°C

Output Power Avg (dBm)

Output Power (dBm)

Two-carrier WCDMA 3GPP Drive Up

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz,

3GPP WCDMA, PAR = 8 dB,

Two-carrier WCDMA 3GPP Drive Up

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz,

3GPP WCDMA, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

-5

-15

-25

-35

-45

-55

IMD Low

IMD Up

ACPR

Gain

Efficiency

Output Power Avg (dBm)

Output Power Avg(dBm)

Data Sheet – DRAFT ONLY

3 of 11

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PTFB182557SH

Confidential, Limited Internal Distribution

Typical Performance (cont.)

CW Drive-Up

V_DD= 28 V, I_DQ= 1400 mA, ƒ = 1842 MHz

19.5

Gain

18.5

17.5

Efficiency

Output Power Avg (dBm)

Broadband Circuit Impedance

Frequency

MHz

Z Source W

Z Load W

Z Source

Z Load

1805

1.48

2.05

2.82

–3.43

–4.08

–4.70

2.33

2.22

1.89

–5.42

–5.07

–5.05

1842.5

1880

Data Sheet – DRAFT ONLY

4 of 11

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Confidential, Limited Internal Distribution

Reference Circuit

C802

1000 pF

Out

C801

1000 pF

R803

100 Ohm

C803

1000 pF

R801

1200 Ohm

R802

1300 Ohm

R804

10 Ohm

R102

10 Ohm

TL112

TL129

TL110

R101

TL105

0 Ohm

TL109

TL123

TL104

TL116

TL114

C104

10 pF

TL127

R103

10 Ohm

C103

2.2 pF

TL102

C102

3.9 pF

C106

10 pF

TL108

TL121

TL131

TL119

TL113

TL106

TL130

TL101

TL128

TL124

GATE DUT

(Pin G)

RF_IN

C108

0.9 pF

C101

2.2 pF

C105

0.1 pF

TL115

TL111

TL125

TL126

TL118

er = 3.66

H = 20 mil

R104

10 Ohm

RO/RO4350B1

C107

10 pF

TL120

TL117

TL122

TL107

TL103

1 8 2 5 5 7 s h _ b d i n _ 0 6 - 2 5 - 2 0 1 2

Reference circuit input schematic for ƒ = 1880 MHz

C203

10000000 pF

C212

4700000 pF

C202

220000000 pF

C211

4700000 pF

C204

10000000 pF

TL212

TL210

TL211

TL213

TL221

TL214

TL223

TL222

DUT

(Pin V)

C205

10 pF

TL202

TL220

TL206 TL217

TL203

TL205

TL219

TL218

TL204

TL201

DRAIN_DUT

(Pin D)

RF_OUT

C206

2.7 pF

C213

0.7 pF

er = 3.66

TL207

TL215

TL216

TL224

TL226

TL209

TL225

TL208

H = 20 mil

DUT

(Pin V)

1 8 2 5 5 7 s h _ b d o u t _ 0 6 - 2 5 - 2 0 1 2

RO/RO4350B1

C201

220000000 pF

C208

4700000 pF

C207

4700000 pF

C209

10000000 pF

C210

10000000 pF

Reference circuit output schematic for ƒ = 1880 MHz

Data Sheet – DRAFT ONLY

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Reference Circuit (cont.)

Reference Circuit Assembly

DUT

PTFB182557SH

Test Fixture Part No.

PCB

LTN/PTFB182557SH

Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε = 3.66

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at http://www.inﬁneon.com/rfpower

Electrical Characteristics at 1880 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Input

TL101

Characteristics

W1 = 1.270, W2 = 1.270, W3 = 1.270,

W4 = 1.270

W1 = 50, W2 = 50, W3 = 50,

W4 = 50

TL102, TL115

TL103, TL104

TL105

0.021 λ, 54.17 W

0.095 λ, 54.17 W

0.013 λ, 54.17 W

0.014 λ, 47.12 W

0.038 λ, 54.17 W

0.052 λ, 4.99 W

0.014 λ, 54.17 W

0.016 λ, 54.17 W

0.178 λ, 63.89 W

0.027 λ, 34.72 W

W1 = 1.016, W2 = 1.016, W3 = 2.032

W = 1.016, L = 9.195

W1 = 40, W2 = 40, W3 = 80

W = 40, L = 362

W = 40, L = 50

W = 1.016, L = 1.270

TL106

W = 1.270, L = 1.321

W = 50, L = 52

TL107

W = 1.016, L = 3.637

W = 40, L = 143

W = 750, L = 180

W = 40, L = 53

TL108

W = 19.050, L = 4.572

W = 1.016, L = 1.346

TL109

TL110

W = 1.016, L = 1.524

W = 40, L = 60

TL111

W = 0.762, L = 17.356

W = 1.981, L = 2.540

W = 30, L = 683

W = 78, L = 100

W1 = 50, W2 = 90

W1 = 40, W2 = 50, W3 = 40

W = 40

TL112

TL113

W1 = 1.270, W2 = 2.286

W1 = 1.016, W2 = 1.270, W3 = 1.016

W = 1.016

TL114

0.011 λ, 54.17 W

TL116, TL117, TL118

TL119

0.028 λ, 47.12 W

0.012 λ, 54.17 W

0.014 λ, 31.24 W

0.013 λ, 54.17 W

W = 1.270, L = 2.652

W = 50, L = 104

W = 40, L = 45

TL120, TL127

TL121

W = 1.016, L = 1.143

W = 2.286, L = 1.270

W = 90, L = 50

TL122, TL123

TL124

W1 = 1.016, W2 = 1.016, W3 = 1.270

W1 = 19.050, W2 = 1.270

W1 = 0.762, W2 = 1.016

W = 1.016, L = 6.134

W1 = 40, W2 = 40, W3 = 50

W1 = 750, W2 = 50

W1 = 30, W2 = 40

W = 40, L = 242

TL125

TL126

0.063 λ, 54.17 W

TL128

W1 = 14.986, W2 = 1.016, W3 = 14.986,

W4 = 1.016

W1 = 590, W2 = 40, W3 = 590,

W4 = 40

TL129

TL130

TL131

W1 = 1.016, W2 = 1.981

W1 = 40, W2 = 78

0.021 λ, 47.12 W

0.099 λ, 47.12 W

W1 = 1.270, W2 = 1.270, W3 = 2.032

W = 1.270, L = 9.449

W1 = 50, W2 = 50, W3 = 80

W = 50, L = 372

table continued on page 7

Data Sheet – DRAFT ONLY

6 of 11

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PTFB182557SH

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Electrical Characteristics at 1880 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Output

TL201

0.005 λ, 53.60 W

0.021 λ, 53.60 W

0.037 λ, 52.90 W

0.005 λ, 53.60 W

0.116 λ, 6.67 W

0.047 λ, 4.99 W

0.006 λ, 19.85 W

0.176 λ, 19.85 W

0.038 λ, 19.85 W

W1 = 1.034, W2 = 1.034, W3 = 0.508

W1 = 1.034, W2 = 1.034, W3 = 2.032

W = 1.057, L = 3.556

W1 = 41, W2 = 41, W3 = 20

W1 = 41, W2 = 41, W3 = 80

W = 42, L = 140

TL202

TL203

TL204

W = 1.034, L = 0.508

W = 41, L = 20

TL205

W = 13.970, L = 10.160

W = 550, L = 400

TL206

W = 19.050, L = 4.064

W = 750, L = 160

TL207, TL221

TL208, TL223

TL209, TL222

W = 4.064, L = 0.508

W = 160, L = 20

W = 4.064, L = 16.104

W = 160, L = 634

W = 4.064, L = 3.454

W = 160, L = 136

TL210, TL211, TL212, 0.028 λ, 19.85 W

TL213, TL214, TL215,

TL216, TL224, TL225,

TL226

W1 = 4.064, W2 = 4.064, W3 = 2.540

W1 = 160, W2 = 160, W3 = 100

TL217

TL218

W1 = 13.970, W2 = 19.050

W1 = 1.034, W2 = 13.970

W = 1.036, L = 9.388

W1 = 550, W2 = 750

W1 = 41, W2 = 550

W = 41, L = 370

TL219

TL220

0.097 λ, 53.52 W

0.019 λ, 53.52 W

W = 1.036, L = 1.788

W = 41, L = 70

Data Sheet – DRAFT ONLY

7 of 11

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Confidential, Limited Internal Distribution

Reference Circuit (cont.)

RO4350, .020

R803 C802

(60)

RO4350, .020

(61)

C803

R802

R801

C801

R102

C203 C204C212C211

C202

R804

R101

C104

R103

C103

C102

C205

C106

RF_IN

RF_OUT

C108

C206

C105

C101

C213

C107

R104

C207

C210 C209C208

C201

PTFB182557S_OUT_01

PTFB182557S_IN_01

1 8 2 5 5 7 s _ C D _ 0 6 - 2 5 - 2 0 1 2

Reference circuit assembly diagram (not to scale)*

Data Sheet – DRAFT ONLY

8 of 11

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PTFB182557SH

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Components Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C103

Chip capacitor, 2.2 pF

Chip capacitor, 3.9 pF

Chip capacitor, 10 pF

Chip capacitor, 0.1 pF

Chip capacitor, 10 pF

Chip capacitor, 0.9 pF

Capacitor, 1000 pF

Resistor, 0 W

ATC

ATC100A2R2CW500XB

ATC100B3R9CW500XB

ATC100A100JW500XB

ATC100B0R1CW500XB

ATC100B100JW500XB

ATC100B0R9CW500XB

PCC1772CT-ND

P0.0GCT-ND

C102

ATC

C104, C107

ATC

C105

ATC

C106

ATC

C108

ATC

C801, C802, C803

Digi-Key

R101

R102, R103, R104

Resistor, 10 W

P10GCT-ND

R801

R802

R803

R804

Resistor, 1200 W

Resistor, 1300 W

Resistor, 100 W

P1.2KGCT-ND

P1.3KGCT-ND

P101ECT-ND

Resistor, 10 W

P10ECT-ND

Transistor

BCP56

Voltage Regulator

Potentiometer, 2k W

LM78L05ACM-ND

3224W-202ECT-ND

Output

C201, C202

Capacitor, 220 µF

Digi-Key

ATC

PCE4444TR-ND

C203, C204, C209, C210

Capacitor, 10 µF

587-1818-2-ND

C205

Chip capacitor, 10 pF

Chip capacitor, 2.7 pF

Chip capacitor, 4.7 µF

Chip capacitor, 0.7 pF

ATC100B100JW500XB

ATC100B2R7CW500XB

490-1864-2-ND

C206

ATC

C207, C208, C211, C212

C213

Digi-Key

ATC

ATC100B0R7CW500XB

Data Sheet – DRAFT ONLY

9 of 11

Rev. 02, 2012-06-25

PTFB182557SH

Confidential, Limited Internal Distribution

Package Outline Speciﬁcations

Package H-34288G-4/2 with Formed Leads

+0.13

-0.08

2X 0.13

21.72

[.855]

+.005

-.003

.005

[

]

45° x .64

[.025]

1.49±0.25

(SPH V)

1.98

[.059±.010]

[.078]

+0.25

1.00

-0.10

+.010

.039

-.004

2X 2.29

[.090]

[

]

2X 30.0°

9.78

[.385]

(14.75±0.50

[.581±.020])

9.40

[.370]

+.38

-.13

4X R0.51

+.015

-.005

R.020

[

]

4X 5°±3°

2X 17.75

[.699]

2X 0.13±0.08

[.005±.003]

(SPH D, G)

+.25

-.13

4.04

22.35±.20

[.880±.008]

+.010

-.005

.159

[

]

1.02

[.040]

C66065-A0003-C741-01-0027

H-34288G-4/2_po_wide_04-02-2012

23.11

[.910]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [0.005] unless speciﬁed otherwise.

4. Pins: D – drain; S – source; G – gate; V – V

DD.

5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].

6. Gold plating thickness: 0.25 micron [10 microinch] max.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.inﬁneon.com/rfpower

Data Sheet – DRAFT ONLY

10 of 11

Rev. 02, 2012-06-25

PTFB182557SH V1

Conﬁdential, Limited Internal Distribution

Revision History:

2012-06-25

Data Sheet

Previous Version:

2012-03-25, Advance Speciﬁcation

Page

All

Subjects (major changes since last revision)

Data Sheet reﬂects released product speciﬁcations

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@inﬁneon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2012-06-25

Published by

Inﬁneon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet – DRAFT ONLY

11 of 11

Rev. 02, 2012-06-25

PTFB182557SH [INFINEON]

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