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ISZ0703NLS [INFINEON]

OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.;
ISZ0703NLS
型号： ISZ0703NLS
厂家： Infineon    Infineon
描述：

OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.

光电二极管
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ISZ0703NLS  
MOSFET  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
PG-TSDSON-8ꢀFL  
8
5
Features  
6
7
6
7
5
8
•ꢀIdealꢀforꢀhigh-frequencyꢀswitching  
•ꢀOptimizedꢀforꢀchargers  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel,ꢀlogicꢀlevel  
1
4
2
3
3
2
4
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Productꢀvalidation  
Drain  
Pin 5-8  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
*1  
Gate  
Pin 4  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Source  
Pin 1-3  
*1: Internal body diode  
VDS  
60  
V
RDS(on),max  
ID  
7.3  
56  
mΩ  
A
Qoss  
15  
nC  
nC  
QG(0V..4.5V)  
8.7  
Typeꢀ/ꢀOrderingꢀCode  
Package  
PG-TSDSON-8 FL  
Marking  
RelatedꢀLinks  
ISZ0703NLS  
0703NL  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
-
-
-
-
-
-
56  
39  
13  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=60ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
224  
21  
A
TA=25ꢀ°C  
-
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
20  
-
-
-
-
-
44  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=60ꢀ°C/W2)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
2.5  
3.4  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
-
-
20  
60  
Device on PCB,  
6 cm² cooling area 2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
60  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=15ꢀµA  
1.1  
1.7  
2.3  
-
-
0.1  
10  
1
100  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
6.4  
8.1  
7.3  
9.2  
VGS=10ꢀV,ꢀID=20ꢀA  
VGS=4.5ꢀV,ꢀID=10ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
-
1.2  
50  
-
-
Ω
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
1100 1400 pF  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
250  
14  
320  
24  
pF  
pF  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=3ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
6.6  
1.8  
13  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=3ꢀΩ  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=3ꢀΩ  
Turn-off delay time  
Fall time  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=3ꢀΩ  
2.5  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
3.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
1.7  
-
3.0  
-
Qsw  
4.3  
-
Gate charge total1)  
Qg  
8.7  
11  
-
Gate plateau voltage  
Gate charge total1)  
Vplateau  
Qg  
2.8  
17  
23  
-
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge  
Qg(sync)  
Qoss  
15  
15  
-
VDS=30ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
41  
224  
1
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.86  
21  
12  
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
-
ns  
nC  
Qrr  
-
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
50  
60  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
0.02  
0.05  
1 µs  
102  
101  
0.1  
0.2  
0.5  
10 µs  
100 µs  
100  
DC  
1 ms  
100  
10 ms  
10-1  
10-2  
10-1  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
240  
22  
10 V  
20  
2.8 V  
3 V  
200  
18  
16  
14  
12  
10  
8
3.5 V  
5 V  
4.5 V  
160  
120  
4 V  
80  
4 V  
3.5 V  
4.5 V  
10 V  
5 V  
40  
3 V  
6
2.8 V  
0
4
0
1
2
3
4
5
0
10  
20  
30  
40  
50  
60  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
240  
24  
200  
160  
120  
80  
20  
16  
25 °C  
175 °C  
175 °C  
12  
8
40  
25 °C  
0
4
0
1
2
3
4
5
6
0
4
8
12  
16  
20  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
2.2  
1.6  
1.2  
0.8  
0.4  
1.8  
150 µA  
1.4  
1.0  
0.6  
15 µA  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
103  
102  
101  
100  
Ciss  
102  
101  
100  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
12 V  
30 V  
48 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
10-1  
100  
101  
102  
103  
0
2
4
6
8
10  
12  
14  
16  
18  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
65  
64  
63  
62  
61  
60  
59  
58  
57  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TSDSON-8-U03  
REVISION: 03  
DATE: 20.10.2020  
MILLIMETERS  
DIMENSIONS  
MIN.  
MAX.  
1.10  
0.44  
A
b
0.90  
0.24  
c
(0.20)  
D
3.20  
2.19  
1.54  
3.20  
2.01  
0.10  
3.40  
2.39  
1.74  
3.40  
2.21  
0.30  
D1  
D2  
E
E1  
E2  
e
0.65  
0.06  
L
0.30  
0.40  
0.50  
0.50  
0.60  
0.70  
L1  
L2  
aaa  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2021-03-12  
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV  
ISZ0703NLS  
RevisionꢀHistory  
ISZ0703NLS  
Revision:ꢀ2021-03-12,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2021-03-12  
Trademarks  
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2021-03-12  

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