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ISZ230N10NM6 [INFINEON]

正常电平 ISZ230N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。;
ISZ230N10NM6
型号： ISZ230N10NM6
厂家： Infineon    Infineon
描述：

正常电平 ISZ230N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
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ISZ230N10NM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
PG-TSDSON-8ꢀFL  
8
5
Features  
6
7
6
7
5
8
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀHighꢀavalancheꢀenergyꢀrating  
1
4
2
3
3
2
4
1
•ꢀ175°Cꢀoperatingꢀtemperature  
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
Drain  
Pin 5-8  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
*1  
Gate  
Pin 4  
Source  
Pin 1-3  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
*1: Internal body diode  
Parameter  
Value  
100  
23  
Unit  
VDS  
V
RDS(on),max  
ID  
mΩ  
A
31  
Qoss  
14  
nC  
nC  
nC  
QG(0V...10V)  
Qrrꢀ(100A/µs)  
7.4  
23  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISZ230N10NM6  
PG-TSDSON-8 FL  
230N1N6  
-
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
31  
22  
19  
7.7  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=8ꢀV,ꢀTC=100ꢀ°C  
VGS=10V,TA=25°C,RthJA=50°C/W2)  
Pulsed drain current3)  
ID,pulse  
IAS  
-
-
-
-
-
124  
10  
A
TA=25ꢀ°C  
TC=25ꢀ°C  
ID=4ꢀA,ꢀRGS=25ꢀΩ  
-
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
-
A
EAS  
VGS  
-
65  
mJ  
V
-20  
20  
-
-
-
-
48  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
1.6  
3.1  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
-
-
20  
50  
Thermal resistance, junction - ambient,  
6 cm² cooling area  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
100  
2.3  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=13ꢀµA  
2.8  
3.3  
-
-
0.1  
10  
1.0  
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C1)  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
19.6  
23.8  
23  
30  
VGS=10ꢀV,ꢀID=10ꢀA  
VGS=8ꢀV,ꢀID=5ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
0.55  
6.3  
1.0  
13  
1.65  
-
Ω
-
Transconductance  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=10ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
530  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
690  
150  
9.8  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz  
120  
6.5  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
4
-
-
-
-
ns  
ns  
ns  
ns  
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=5ꢀA,  
RG,ext=1.6ꢀΩ  
1
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
6.5  
7
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=5ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
2.5  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
3.3  
1.8  
2.3  
-
Gate to source charge1)  
Gate charge at threshold1)  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=50ꢀV,ꢀID=5ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
1.5  
1.5  
Qsw  
2.5  
Gate charge total1)  
Qg  
7.4  
9.3  
-
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge1)  
Vplateau  
Qg(sync)  
Qoss  
4.8  
6.5  
-
nC  
nC  
14  
17  
VDS=50ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
31  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
124  
1.0  
45  
A
TC=25ꢀ°C  
Diode forward voltage  
0.84  
30  
V
VGS=0ꢀV,ꢀIF=10ꢀA,ꢀTj=25ꢀ°C  
VR=50ꢀV,ꢀIF=5ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=50ꢀV,ꢀIF=5ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=50ꢀV,ꢀIF=5ꢀA,ꢀdiF/dt=1000ꢀA/µs  
VR=50ꢀV,ꢀIF=5ꢀA,ꢀdiF/dt=1000ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
ns  
nC  
Qrr  
trr  
23  
34.5  
21  
14  
Qrr  
86.5  
130  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
50  
32  
28  
24  
20  
16  
12  
8
40  
30  
20  
10  
0
4
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
102  
101  
1 µs  
10 µs  
100 µs  
1 ms  
10 ms  
100  
100  
DC  
10-1  
10-2  
10-1  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
120  
60  
6 V  
7 V  
8 V  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
10 V  
8 V  
7 V  
10 V  
6 V  
5 V  
4.5 V  
0
1
2
3
4
5
0
10  
20  
30  
40  
50  
60  
70  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
50  
60  
175 °C  
50  
40  
30  
40  
30  
20  
25 °C  
20  
10  
0
175 °C  
10  
0
25 °C  
0
1
2
3
4
5
6
7
4
5
6
7
8
9
10  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=10ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
130 µA  
13 µA  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=10ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
103  
103  
25 °C  
25 °C, max  
175 °C  
Ciss  
175 °C, max  
102  
101  
100  
102  
101  
100  
Coss  
Crss  
0
20  
40  
60  
80  
100  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
20 V  
50 V  
80 V  
8
6
4
2
0
101  
25 °C  
100 °C  
100  
150 °C  
10-1  
10-2  
10-1  
100  
101  
102  
103  
0
1
2
3
4
5
6
7
8
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=5ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
112  
110  
108  
106  
104  
102  
100  
98  
96  
94  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=10ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TSDSON-8-U03  
REVISION: 03  
DATE: 20.10.2020  
MILLIMETERS  
DIMENSIONS  
MIN.  
MAX.  
1.10  
0.44  
A
b
0.90  
0.24  
c
(0.20)  
D
3.20  
2.19  
1.54  
3.20  
2.01  
0.10  
3.40  
2.39  
1.74  
3.40  
2.21  
0.30  
D1  
D2  
E
E1  
E2  
e
0.65  
0.06  
L
0.30  
0.40  
0.50  
0.50  
0.60  
0.70  
L1  
L2  
aaa  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2023-02-10  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV  
ISZ230N10NM6  
RevisionꢀHistory  
ISZ230N10NM6  
Revision:ꢀ2023-02-10,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2.2  
2021-07-05  
Release of final version  
Update Diagram 10 and IAS  
Update SOA Diagram  
2021-07-20  
2023-02-10  
Trademarks  
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Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2023-02-10  

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