IRL3202SPBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRL3202SPBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总9页 (文件大小：231K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95954

IRL3202SPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.016Ω

l Lead-Free

I_D= 48A

Description

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters in the PC environment. Advanced

processing techniques combined with an optimized

gate oxide design results in a die sized specifically to

offer maximum efficiency at minimum cost.

The D²Pak is a surface mount power package capable

of accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because

of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount

application.

D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 4.5Vꢀ

Pulsed Drain Current ꢀ

190

69W

0.56

± 10

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AS

I_AR

270

29A

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

6.9mJ

5.0

V/ns

°C

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.8

Units

R_θJC

R_θJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

°C/W

12/21/04

IRL3202SPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient 0.029 V/°C Refer ence to 25°C, I_D= 1mAꢀ

0.019V

0.016

0.70

_GS= 4.5V, I_D= 29A

V_GS= 7.0V, I_D= 29A

V_DS= V_GS, I_D= 250µA

V_DS= 16V, I_D= 29Aꢀ

V_DS= 20V, V_GS= 0V

V_DS= 10V, V_GS= 0V, T_J= 150°C

V_GS= 10V

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

250

100

-100

µA

I_DSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -10V

Q_g

I_D= 29A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= 16V

V_GS= 4.5V, See Fig. 6 ꢀ

9.8

V_DD= 10V

RiseTime

100

I_D= 29A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 9.5Ω, V_GS= 4.5V

R_D= 0.3Ω, ꢀ

Between lead,

and center of die contact

V_GS= 0V

L_S

Internal Source Inductance

7.5

C_iss

C_oss

C_rss

Input Capacitance

2000

800

290

Output Capacitance

V_DS= 15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5ꢀ

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFETsymbol

showing the

I_S

I_SM

Pulsed Source Current

(Body Diode) ꢀ

integral reverse

190

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

1.3

68 100

130 190

T_J= 25°C, I_S= 29A, V_GS= 0V

T_J= 25°C, I_F= 29A

Q_rr

t_on

nC di/dt = 100A/µs ꢀ

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

I_SD≤ 29A, di/dt ≤ 63A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

max. junction temperature.

Starting T_J= 25°C, L = 0.64mH

R_G= 25Ω, I_AS= 29A.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Uses IRL3202 data and test conditions

** When mounted on FR-4 board using minimum recommended footprint.

For recommended footprint and soldering techniques refer to application note #AN-994.

IRL3202SPbF

1000

100

1000

100

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

BOTTOM 2.00V

BOTTOM 1.75V

BOTTOM

BOTTOM 1.75V

2.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

48A

T = 25 C

1.5

1.0

0.5

0.0

100

T = 150 C

= 15V

20µs PULSE WIDTH

= 4.5V

-60 -40 -20

20 40 60 80 100 120 140 160

4 5

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

IRL3202SPbF

3500

= 0V,

f = 1MHz

C SHORTED

29A

= C + C

iss

gd ,

= 16V

= C

3000

2500

2000

1500

1000

500

rss

= C + C

oss

iss

oss

rss

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

T = 150 C

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.2

0.8

1.4

2.0

2.6

100

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

IRL3202SPbF

600

500

400

300

200

100

TOP

13A

18A

BOTTOM 29A

100

125

150

100

125

150

T , Case Temperature ( C)

Starting T , Junction Temperature ( C)

Fig 9. Maximum Drain Current Vs.

Fig 10. Maximum Avalanche Energy

CaseTemperature

Vs. Drain Current

D = 0.50

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

0.01

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

2. Peak T =P

t / t

x Z

+ T

thJC

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

IRL3202SPbF

0.018

0.025

0.020

0.015

0.010

VGS = 4.5V

0.016

0.014

0.012

0.010

= 48A

VGS = 7.0V

0.0

2.0

4.0

6.0

8.0

, Drain Current (A)

V_GS, Gate-to-Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

IRL3202SPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information

T HIS IS AN IRF530S WIT H

LOT CODE 8024

AS SE MBLED ON WW 02, 2000

IN T HE ASSE MBLY LINE "L"

PART NUMBE R

INT ERNAT IONAL

RECTIFIE R

LOGO

F530S

DAT E CODE

YEAR 0 = 2000

WE EK 02

Note: "P" in ass embly line

pos ition indicates "Lead-F ree"

AS S E MB L Y

LOT CODE

LINE

PART NUMBER

INTERNATIONAL

RECT IFIER

LOGO

F530S

DATE CODE

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

YEAR 0 = 2000

AS S EMBLY

LOT CODE

WEEK 02

A = AS S EMBLY S ITE CODE

IRL3202SPbF

D²Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

11.60 (.457)

11.40 (.449)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRL3202SPBF [INFINEON]

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