IRL3215PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRL3215PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95405
IRL3215PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 150V
R
DS(on) = 0.166 Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 12Aꢀ
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
12 ꢀ
8.5
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
48
PD @TC = 25°C
PowerDissipation
80
W
W/°C
V
LinearDeratingFactor
0.53
±16
130
7.2
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
8.0
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
1.9
–––
62
°C/W
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6/17/04
IRL3215PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
––– ––– 0.166
––– ––– 0.184
––– ––– 0.208
VGS = 10V, ID = 7.2A
VGS = 5.0V, ID = 7.2A
VGS = 4.0V, ID = 6A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 7.2A
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
1.0
8.3
––– 2.0
––– –––
V
S
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 35
––– ––– 4.1
––– ––– 21
V
DS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
GS = 16V
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
V
VGS = -16V
ID = 7.2A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC VDS = 120V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
7.4 –––
45 –––
38 –––
36 –––
VDD = 75V
ID = 7.2A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 12Ω, VGS = 5.0V
RD = 10.2Ω, See Fig. 10
Betweenlead,
D
S
LD
LS
InternalDrainInductance
InternalSourceInductance
4.5
nH
6mm(0.25in.)
G
frompackage
––– 7.5 –––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
InputCapacitance
––– 775 –––
––– 140 –––
OutputCapacitance
pF
VDS = 25V
ReverseTransferCapacitance
–––
70 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
12ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
48
p-n junction diode.
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 160 240
V
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A
ns
Qrr
ton
––– 810 1210 nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 7.2A. (See Figure 12)
ꢀ Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 7.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRL3215PbF
10
10
VGS
VGS
TOP
15V
TOP
15V
10V
10V
5V
5V
4.5V
4.5V
3.5V
3.5V
3V
3V
2.75V
2.75V
BOTTOM 2.50V
BOTTOM 2.50V
1
1
2.5V
2.5V
0.1
0.01
0.1
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 175 C
J
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
3.0
12A
=
I
D
°
T = 25 C
J
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
2.0
3.0
4.0
5.0 6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRL3215PbF
15
10
5
2500
I = 7.2 A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
C
= C
rss
gd
C
= C + C
2000
1500
1000
500
0
oss
ds
gd
C
iss
C
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
°
T = 175 C
J
1ms
1
10ms
°
°
T = 25 C
T = 25 C
C
J
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRL3215PbF
RD
12
9
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3215PbF
300
250
200
150
100
50
I
D
TOP
2.9A
5.1A
15V
BOTTOM 7.2A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
175
°
V
Starting T , Junction Temperature ( C)
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL3215PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRL3215PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
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8
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