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IRL3215 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRL3215
型号： IRL3215
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET
文件： 总8页 (文件大小：137K)
中文：  中文翻译
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PD- 91792  
IRL3215  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 150V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 0.166 Ω  
G
l Fully Avalanche Rated  
ID = 12Aꢀ  
S
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and ruggedized device  
design that HEXFET Power MOSFETs are well known for, provides the  
designer with an extremely efficient and reliable device for use in a wide variety  
of applications.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts. The low  
thermal resistance and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
12 ꢀ  
8.5  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
48  
PD @TC = 25°C  
PowerDissipation  
80  
W
W/°C  
V
LinearDeratingFactor  
0.53  
±16  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
130  
mJ  
A
7.2  
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
8.0  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.9  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
–––  
62  
°C/W  
www.irf.com  
1
3/23/99  
IRL3215  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
150 ––– –––  
––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
V(BR)DSS  
Drain-to-SourceBreakdownVoltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient  
––– ––– 0.166  
––– ––– 0.184  
––– ––– 0.208  
VGS = 10V, ID = 7.2A „  
VGS = 5.0V, ID = 7.2A „  
VGS = 4.0V, ID = 6A „  
VDS = VGS, ID = 250µA  
VDS = 25V, ID = 7.2A‡  
VDS = 150V, VGS = 0V  
VDS = 120V, VGS = 0V, TJ = 150°C  
VGS = 16V  
RDS(on)  
StaticDrain-to-SourceOn-Resistance  
Ω
VGS(th)  
gfs  
GateThresholdVoltage  
1.0  
8.3  
––– 2.0  
––– –––  
V
S
ForwardTransconductance  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
––– ––– 35  
––– ––– 4.1  
––– ––– 21  
IDSS  
IGSS  
Drain-to-SourceLeakageCurrent  
µA  
nA  
Gate-to-SourceForwardLeakage  
Gate-to-SourceReverseLeakage  
Total Gate Charge  
VGS = -16V  
Qg  
ID = 7.2A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-SourceCharge  
Gate-to-Drain("Miller")Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 120V  
VGS = 5.0V, See Fig. 6 and 13 „‡  
–––  
–––  
–––  
–––  
7.4 –––  
45 –––  
38 –––  
36 –––  
VDD = 75V  
ID = 7.2A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 12Ω, VGS = 5.0V  
RD = 10.2Ω, See Fig. 10 „‡  
Betweenlead,  
D
LD  
LS  
InternalDrainInductance  
InternalSourceInductance  
–––  
4.5  
–––  
nH  
6mm(0.25in.)  
G
frompackage  
––– 7.5 –––  
and center of die contact†  
VGS = 0V  
S
Ciss  
Coss  
Crss  
InputCapacitance  
––– 775 –––  
––– 140 –––  
OutputCapacitance  
pF  
VDS = 25V  
ReverseTransferCapacitance  
–––  
70 –––  
ƒ = 1.0MHz, See Fig. 5‡  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
––– –––  
––– –––  
12ꢀ  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
48  
S
p-n junction diode.  
VSD  
trr  
DiodeForwardVoltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 160 240  
V
TJ = 25°C, IS = 7.2A, VGS = 0V „  
TJ = 25°C, IF = 7.2A  
ns  
Qrr  
ton  
––– 810 1210 nC  
di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
Repetitive rating; pulse width limited by  
„Pulse width ≤ 300µs; duty cycle ≤ 2%.  
max. junction temperature. ( See fig. 11 )  
‚Starting TJ = 25°C, L = 4.9mH  
RG = 25Ω, IAS = 7.2A. (See Figure 12)  
ꢀCaculated continuous current based on maximum allowable  
junction temperature;for recommended current-handling of the  
package refer to Design Tip # 93-4  
ƒISD ≤ 7.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 175°C  
,
2
www.irf.com  
IRL3215  
10  
10  
VGS  
VGS  
TOP  
15V  
TOP  
15V  
10V  
5V  
10V  
5V  
4.5V  
4.5V  
3.5V  
3.5V  
3V  
3V  
2.75V  
2.75V  
BOTTOM 2.50V  
BOTTOM 2.50V  
1
1
2.5V  
2.5V  
0.1  
0.01  
0.1  
20µs PULSE WIDTH  
°
20µs PULSE WIDTH  
°
T = 25 C  
J
T = 175 C  
J
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
3.0  
10  
12A  
=
I
D
°
T = 25 C  
J
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 175 C  
J
1
V
= 50V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
0.1  
2.0  
3.0  
4.0  
5.0 6.0  
7.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRL3215  
15  
10  
5
2500  
I
D
= 7.2 A  
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
GS  
C
= C + C  
iss  
gs  
gd  
gd ,  
V
V
V
= 120V  
= 75V  
= 30V  
DS  
DS  
DS  
C
= C  
rss  
C
= C + C  
gd  
2000  
oss  
ds  
C
iss  
1500  
1000  
500  
0
C
oss  
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
0
10  
Q
20  
30  
40  
50  
1
10  
100  
, Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
1000  
100  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
100us  
°
T = 175 C  
J
1ms  
1
10ms  
°
°
T = 25 C  
J
T = 25 C  
C
°
T = 175 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.1  
0.2  
1
10  
100  
1000  
0.4  
0.6  
0.8  
1.0  
1.2  
V
, Drain-to-Source Voltage (V)  
V
,Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRL3215  
RD  
12  
9
VDS  
VGS  
10V  
D.U.T.  
RG  
+VDD  
-
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
6
Fig 10a. Switching Time Test Circuit  
3
V
DS  
90%  
0
25  
50  
75  
100  
125  
150  
175  
°
, Case Temperature ( C)  
T
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
D = 0.50  
0.20  
1
0.10  
0.05  
P
DM  
0.1  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
t
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1 2  
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRL3215  
300  
250  
200  
150  
100  
50  
I
D
TOP  
2.9A  
5.1A  
BOTTOM 7.2A  
1 5V  
DRIVER  
L
V
G
DS  
D.U.T  
R
+
V
D D  
-
I
A
AS  
20V  
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
0
25  
50  
75  
100  
125  
150  
175  
°
Starting T , Junction Temperature ( C)  
J
V
(BR)DSS  
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Current Regulator  
Fig 12b. Unclamped Inductive Waveforms  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
Q
G
.3µF  
+
10 V  
V
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
6
www.irf.com  
IRL3215  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFETS  
www.irf.com  
7
IRL3215  
Package Outline  
TO-220AB Outline  
Dimensions are shown in millimeters (inches)  
10.54 (.415)  
10.29 (.405)  
- B  
-
3.78 (.149)  
3.54 (.139)  
2.87 (.113)  
2.62 (.103)  
4.69 (.185)  
4.20 (.165)  
1.32 (.052)  
1.22 (.048)  
- A  
-
6.47 (.255)  
6.10 (.240)  
4
15.24 (.600)  
14.84 (.584)  
1.15 (.045)  
M IN  
LEAD ASSIG NM ENTS  
1
2
3
4
- GATE  
1
2
3
- DRAIN  
- SOU RC E  
- DRAIN  
14.09 (.555)  
13.47 (.530)  
4.06 (.160)  
3.55 (.140)  
0.93 (.037)  
0.69 (.027)  
0.55 (.022)  
0.46 (.018)  
3X  
3X  
1.40 (.055)  
3X  
1.15 (.045)  
0.36 (.014)  
M
B
A
M
2.92 (.115)  
2.64 (.104)  
2.54 (.100)  
2X  
N OTES:  
1
2
D IM ENSIONING  
&
TOLERANCING PER ANSI Y14.5M , 1982.  
3
4
OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.  
HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.  
C ONTROLLING DIM ENSION : INCH  
&
Part Marking Information  
TO-220AB  
EXAMPLE : THIS IS AN IR F1010  
W ITH ASSEM BLY  
A
INTERNATIONAL  
RECTIFIER  
LOGO  
PART NU M BER  
LOT C ODE 9B1M  
IR F1010  
9246  
9B  
1M  
D ATE COD E  
(YYW W )  
ASSEMBLY  
LOT  
CO DE  
YY  
=
YEAR  
= W EEK  
W W  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 3/99  
8
www.irf.com  

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