IRL2703S [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRL2703S |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1360
IRL2703S
PRELIMINARY
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.04Ω
G
l Fully Avalanche Rated
ID = 24A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D 2 Pak
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current
24
17
A
96
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.30
VGS
EAS
IAR
Gate-to-Source Voltage
±16
Single Pulse Avalanche Energy ꢀ
Avalanche Current
77
mJ
A
14
4.5
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
3.5
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
40
Units
RθJC
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient (PCB Mount,steady-state)**
11/18/96
IRL2703S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.040
––– ––– 0.060
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 14Aꢀ
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
6.4
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 15
––– ––– 4.6
––– ––– 9.3
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 14A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 ꢀ
–––
8.5 –––
VDD = 15V
––– 140 –––
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
12 –––
20 –––
RG = 12Ω, VGS = 4.5V
RD = 1.0Ω, See Fig. 10 ꢀ
Between lead,
nH
pF
LS
Internal Source Inductance
––– 7.5
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
450 –––
––– 210 –––
––– 110 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 24
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 96
p-n junction diode.
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 25°C, IF = 14A
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 65 97
––– 140 210
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 570µH
RG = 25Ω, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRL2703 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2703S
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TO P
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
BOTTOM 2.5V
2.5V
1
1
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
0.1
0.1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0
1 0
1
I
= 24A
D
T
= 25°C
T
J
= 175°C
J
V
= 15V
DS
V
= 10V
GS
20µs P ULS E W IDTH
0. 1
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
2
3
4
5
6
7
8
9
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2703S
15
12
9
1000
I
= 14A
V
= 0V,
f = 1M Hz
D
GS
C
C
C
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
iss
gs
gd
d s
gd
V
V
= 24V
= 15V
DS
DS
rss
oss
gd
800
600
400
200
0
C
C
iss
o ss
6
C
rs s
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
4
8
12
16
20
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0
1000
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
J
100
10
1
10µs
T
= 25°C
J
1 0
10 0µs
1 ms
T
T
= 25°C
= 175°C
C
J
1 0m s
V
= 0V
S ingle Pulse
GS
1
A
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL2703S
2 4
2 0
1 6
1 2
8
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
A
1 7 5
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
TC , Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0 .5 0
0.2 0
1
0 .1 0
0.05
P
0.02
0.0 1
D M
0.1
t
SINGL E PUL SE
1
(THER M AL R ESPON SE)
t
2
N o tes:
1 . D u ty fa cto r D
=
t
/ t
1
Z
2
2 . Pe a k T = P
x
+ T
C
J
D M
th JC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
, Re cta n g u la r P u ls e D u ra tio n (se c )
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2703S
160
120
80
L
I
D
V
DS
TOP
5.7A
9.9A
B OTTOM 14A
D.U.T.
R
G
+
-
V
DD
I
5.0 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
40
V
= 15V
50
D D
0
A
175
V
(BR)DSS
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
t
p
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
4.5 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2703S
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2703S
Package Outline
D2Pak Outline
Dimensions are shown in millimeters (inches)
1 0 .5 4 (.4 15 )
1 0 .2 9 (.4 05 )
- B
-
4.6 9 (.1 85 )
4.2 0 (.1 65 )
1 0 .1 6 (.40 0 )
R E F.
1 .4 0 (.0 5 5)
M A X.
- A
4
-
1 .3 2 (.0 5 2)
1 .2 2 (.0 4 8)
6.4 7 (.2 55 )
6.1 8 (.2 43 )
4
1 .7 8 (.0 7 0)
1 .2 7 (.0 5 0)
1 5 .4 9 (.61 0 )
1 4 .7 3 (.58 0 )
2.7 9 (.1 10 )
2.2 9 (.0 90 )
1
2
3
5 .2 8 (.2 0 8)
4 .7 8 (.1 8 8)
2.6 1 (.1 0 3)
2.3 2 (.0 9 1)
1.4 0 (.0 55 )
1.1 4 (.0 45 )
1.39 (.0 55 )
1.14 (.0 45 )
3 X
8 .8 9 (.35 0 )
R E F.
0.5 5 (.0 22 )
0.4 6 (.0 18 )
0 .93 (.03 7 )
0 .69 (.02 7 )
2X
5 .0 8 (.20 0)
0 .2 5 (.0 1 0)
M
A M B
NOTES:
1
2
3
4
5
DIMENSIONS AFTER SOLDER DIP.
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982
CONTROLLING DIMENSION: INCH.
DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
A
Part Marking Information
D2Pak
EXAM PLE : THIS IS AN IRF530S
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
LOT CODE 9B1M
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY = YEAR
W W = W EEK
LOT CODE
IRL2703S
Tape & Reel Information
D2Pak
Dimensions are shown in millimeters (inches)
T R R
1.6 0 (.063 )
1.5 0 (.059 )
1 . 6 0 (. 06 3 )
1 . 5 0 (. 05 9 )
4.10 (.1 61)
3.90 (.1 53)
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
F E ED D I R E C T IO N
1.85 (.0 73)
1.65 (.0 65)
2 4 . 3 0 (. 9 5 7 )
2 3 . 9 0 (. 9 4 1 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
T R L
1 . 7 5 (. 0 6 9 )
1 . 2 5 (. 0 4 9 )
1 0 . 9 0 (. 4 2 9 )
1 0 . 7 0 (. 4 2 1 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 ( .6 3 4 )
1 5 .9 0 ( .6 2 6 )
F E ED D I R E C T IO N
1 3 .5 0 (. 5 32 )
1 2 .8 0 (. 5 04 )
2 7 .4 0 (1 .0 7 9)
2 3 .9 0 (.9 4 1 )
4
330.00
(14.173)
M AX.
6 0. 00 (2 .3 6 2)
M IN .
3 0. 4 0 (1 .1 9 7)
M A X .
N O T E S
:
1. C O M F O R M S T O E IA - 41 8 .
2. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D
4. IN C L U D E S F LA N G E D IS T O R T IO N
26.40 (1.039)
24.40 (.961)
4
@ H U B .
3
@
O U T E R E D G E .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/96
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