IRL2910N [ETC]
;
| 型号： | IRL2910N |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1375
IRL2910
PRELIMINARY
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
VDSS = 100V
RDS(on) = 0.026Ω
ID = 48A
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design for which HEXFET
Power MOSFETs are well known, provides the designer with an
extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-
industrialapplicationsatpowerdissipationlevelstoapproximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
48
34
190
A
PD @TC = 25°C
Power Dissipation
150
W
W/°C
V
Linear Derating Factor
1.0
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
520
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
29
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
15
mJ
V/ns
7.4
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.0
Units
RθJC
RθCS
RθJA
–––
0.50
–––
°C/W
°C/W
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
62
IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.026
––– ––– 0.030
––– ––– 0.040
VGS = 10V, ID = 29A
VGS = 5.0V, ID = 29A
VGS = 4.0V, ID = 24A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 29A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
28
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 20
––– ––– 81
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 29A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
VDD = 50V
–––
11 –––
––– 100 –––
ID = 29A
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
49 –––
55 –––
RG = 1.4Ω, VGS = 5.0V
RD = 1.7Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3700 –––
––– 630 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
48
––– –––
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 190
p-n junction diode.
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 29A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.3
––– 240 350
––– 1.8 2.7
V
ns
Qrr
µC
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting T J = 25°C, L = 1.2mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 29A. (See Figure 12)
IRL2910
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 175°C
T
= 25°C
J
J
1
0.1
1
0.1
A
100
A
100
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 175oC
TJ = 25oC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 48A
D
T = 25°C
J
100
10
1
T = 175°C
J
VDS = 50V
20µs PULSE WIDTH
V
= 10V
GS
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
J
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2910
15
12
9
6000
I
= 29A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
ds
SHORTED
V
V
V
= 80V
= 50V
= 20V
gs
gd
DS
DS
DS
= C
gd
5000
C
iss
= C + C
ds
gd
4000
3000
2000
1000
0
6
C
oss
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
200
A
0
40
80
120
160
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
100
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
V
GS
= 0V
1
A
10
A
1000
1
10
100
0.4
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL2910
RD
50
40
30
20
10
0
VDD
Fig 10a. Switching Time Test Circuit
A
175
25
50
75
100
125
150
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
P
DM
0.10
0.1
t
1
0.05
t
2
0.02
Notes:
1. Duty factor D =
0.01
SINGLE PULSE
t
/ t
2
1
(THERMAL RESPONSE)
2. Peak T = P
x Z
+ T
C
D M
J
thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2910
1400
1200
1000
800
600
400
200
0
I
D
TOP
12A
20A
BOTTOM 29A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
V
= 25V
50
DD
A
175
t
p
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRL2910
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
Low Stray Inductance
• Ground Plane
D.U.T
•
•
Low Leakage Inductance
Current Transformer
RG
•
dv/dt controlled by R G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2910
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371
Data and specifications subject to change without notice. 11/95
相关型号：
IRL2910STRL
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
INFINEON
IRL2910STRRPBF
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRL3102-003
Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
IRL3102-006
Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
©2020 ICPDF网 联系我们和版权申明