IRL2910-011 [INFINEON]

Power Field-Effect Transistor, 48A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;
IRL2910-011
型号: IRL2910-011
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 48A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

局域网 开关 晶体管
文件: 总1页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRL2910L

HEXFET POWER MOSFET
INFINEON

IRL2910LPBF

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
INFINEON

IRL2910PBF

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026ヘ , ID = 55A )
INFINEON

IRL2910S

HEXFET POWER MOSFET
INFINEON

IRL2910SPBF

HEXFET㈢ Power MOSFET
INFINEON

IRL2910STRL

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
INFINEON

IRL2910STRR

暂无描述
INFINEON

IRL2910STRRPBF

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON

IRL3102

Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
INFINEON

IRL3102-003

Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON

IRL3102-006

Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON