IRL2703-018PBF [INFINEON]
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
| 型号： | IRL2703-018PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网 开关 晶体管 |
| 文件： | 总9页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1359A
IRL2703
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.04Ω
G
l Fully Avalanche Rated
ID = 24A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levelstoapproximately50watts. Thelowthermalresistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
24
17
A
96
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.30
VGS
EAS
IAR
Gate-to-Source Voltage
±16
Single Pulse Avalanche Energy
Avalanche Current
77
mJ
A
14
4.5
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
Max.
Units
RθJC
RθCS
RθJA
3.3
––––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
––––
8/27/97
IRL2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.040
––– ––– 0.060
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 14A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
6.4
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 15
––– ––– 4.6
––– ––– 9.3
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 14A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
8.5 –––
VDD = 15V
––– 140 –––
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
12 –––
20 –––
RG = 12Ω, VGS =4.5V
RD = 1.0Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 450 –––
––– 210 –––
––– 110 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 24
A
––– ––– 96
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 14A, VGS = 0V
TJ = 25°C, IF = 14A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 65 97
––– 140 210
V
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 570µH
RG = 25Ω, IAS = 14A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL2703
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TO P
TO P
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
1
1
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
0.1
0.1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0
1 0
1
I
= 24A
D
T
= 25°C
T
J
= 175°C
J
V
= 15V
DS
V
= 10V
GS
20µs P ULS E W IDTH
0. 1
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
2
3
4
5
6
7
8
9
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2703
1000
15
12
9
V
C
C
= 0V,
f = 1M Hz
GS
iss
I
= 14A
D
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
d s
gd
V
V
= 24V
= 15V
DS
DS
rss
oss
C
gd
800
C
C
iss
600
400
200
0
o ss
6
C
rs s
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
20
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
J
10µs
T
= 25°C
J
1 0
10 0µs
1 ms
T
T
= 25°C
= 175°C
C
1 0m s
J
V
= 0V
S ingle Pulse
G S
1
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL2703
2 4
2 0
1 6
1 2
8
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
4
DS
90%
0
A
1 7 5
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
TC , Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D
= 0.5 0
0 .2 0
1
0.1 0
0.05
P
0.02
0 .0 1
D M
0.1
t
SIN GL E PU LS E
1
(TH ERM A L RESP ON SE)
t
2
N o te s:
1 . D u ty fa cto r D
=
t
/ t
1
2
2 . Pe a k T
=
P
x Z
+ T
C
D M
J
th JC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2703
160
120
80
L
I
D
V
DS
TOP
5.7A
9.9A
B OTTOM 14A
D.U.T.
R
+
-
G
V
DD
I
5.0 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
40
V
= 15V
50
D D
0
A
175
V
(BR)DSS
25
75
100
125
150
t
Starting TJ , Junction Temperature (°C)
p
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
4.5 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2703
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2703
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
-
B
-
3.78 (.14 9)
3.54 (.13 9)
2 .87 ( .1 13 )
2 .62 ( .1 03 )
4 .69 ( .1 85 )
4 .20 ( .1 65 )
1 .3 2 (.0 52 )
1 .2 2 (.0 48 )
-
A
-
6.4 7 (.25 5)
6.1 0 (.24 0)
4
1 5.24 ( .6 0 0)
1 4.84 ( .5 8 4)
1.15 ( .0 4 5)
L E A D
A
S
S
IG N M E N T S
M IN
1
2
3
4
-
-
-
-
G A T E
1
2
3
D R A IN
U R C E
D R A IN
S
O
1 4.09 (.5 5 5)
1 3.47 (.5 3 0)
4.0 6 (.16 0)
3.5 5 (.14 0)
0 .93 ( .0 37 )
0 .69 ( .0 27 )
0.5 5 (.02 2)
0.4 6 (.01 8)
3X
3X
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
3 X
0 .3 6 (.01 4)
M
B
A
M
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .54 ( .1 00 )
2X
N O T E
S :
1
2
D IM E N S IO N IN G
C O N T R O L LIN G
&
T O L E R A N C IN G
P
E R
A
N S
I
Y
14 .5 M , 1 98 2.
3
O
U T L IN E C O N F O R M S T O J E D E
C
O U T LIN E T O -2 20 -A
B .
D
IM E N S IO IN C H
N
:
4
H E A T S IN L E A D E A U R E M E N T S
K
&
M
S
D
O
N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
EXAM PL E : THIS IS AN IRF1 010
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
L OT CODE 9 B1M
IRF 10 10
9246
9B
1 M
DATE CODE
(YYW W )
ASSEMBLY
LOT CODE
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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