IRHF597230SCS [INFINEON]

Power Field-Effect Transistor,;


型号：	IRHF597230SCS
厂家：	Infineon
描述：	Power Field-Effect Transistor, 开关脉冲晶体管
文件：	总8页 (文件大小：363K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-94550A

IRHF597230

RADIATION HARDENED

POWER MOSFET

THRU-HOLE TO-205AF (TO-39)

200V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHF597230

IRHF593230

100 kRads(Si)

300 kRads(Si)

-4.5A

0.54

TO-39

Features

Description

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80 (MeV/

(mg/cm²). The combination of low RDS(on) and low gate

charge reduces the power losses in switching applications

such as DC-DC converters and motor controllers. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-4.5

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-3.0

-18

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.2

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

157

V_GS

E_AS

I_AR

-4.5

2.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-25

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-01-30

IRHF597230

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

V_GS= 0V, I_D= -1.0mA

V/°C Reference to 25°C, I_D= -1.0mA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

-200 ––– –––

––– -0.21 –––

––– ––– 0.54

-2.0 ––– -4.0

BV_DSS/T_J

R_DS(on)

V_GS= -12V, I_D= -3.0A 



V_GS(th)

V_DS= V_GS, I_D= -1.0mA

Gfs

I_DSS

Forward Transconductance

3.6

––– –––

_DS= -15V, I_D= -3.0A 

V_DS= -160V, V_GS= 0V

_DS= -160V,V_GS= 0V,T_J=125°C

V_GS= -20V

_GS= 20V

––– ––– -10

––– ––– -25

––– ––– -100

––– ––– 100

––– –––

Zero Gate Voltage Drain Current

µA

I_GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Q_G

Q_GS

Q_GD

t_d(on)

8.5

I_D= -4.5A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V_DS= -100V

_GS= -12V

V_DD= -100V

I_D= -4.5A

t_d(off)

t_f

R_G= 7.5

V_GS= -12V

––– ––– 120

Measured from Drain lead (6mm / 0.25in

from package) to Source lead (6mm/ 0.25

in from package) with Source wire inter-

nally bonded from Source pin to Drain pin

Ls +L_D

Total Inductance

–––

7.0

–––

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 1340 –––

––– 190 –––

–––

V_GS= 0V

V_DS= -25V

–––

ƒ = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

––– ––– -4.5

I_SM

V_SD

t_rr

––– ––– -18

––– ––– -5.0

––– ––– 200

T_J=25°C,I_S= -4.5A, V_GS= 0V

T_J=25°C, I_F= -4.5A, V_DD≤25V

di/dt = -100A/µs 

Reverse Recovery Time

µC

Q_rr

Reverse Recovery Charge

––– –––

1.2

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

t_on

Forward Turn-On Time

Thermal Resistance

Parameter

Junction-to-Case

Min.

–––

Typ.

–––

Max.

5.0

Units

°C/W

R_JC

R_JA

Junction-to-Ambiet (Typical Socket Mount)

–––

175

°C/W

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

V_DD= -50V, starting T_J= 25°C, L = 15.5mH, Peak I_L= -4.5A, V_GS= -12V

 I_SD -4.5A, di/dt  -360A/µs, V_DD -200V, T_J 150°C

 Pulse width  300 µs; Duty Cycle  2%

Total Dose Irradiation with V_GSBias. –12 volt V_GSapplied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

 Total Dose Irradiation with V_DSBias. -160 volt V_DSapplied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

2017-01-30

IRHF597230

Pre-Irradiation

IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

100 kRads (Si)¹

300 kRads (Si)²

Parameter

Units

Test Conditions

Min.

-200

-2.0

–––

Max.

–––

-4.0

-100

100

-10

Min.

-200

-2.0

–––

Max.

–––

-5.0

-100

100

-10

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= -1.0mA

V_DS= V_GS, I_D= -1.0mA

V_GS= -20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

µA

I_GSS

V_GS= 20V

I_DSS

V_DS= -160V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

0.505

–––

0.505

V_GS= -12V, I_D= -3.0A 



Static Drain-to-Source 

On-State Resistance (TO-39)

R_DS(on)

V_SD

–––

0.54

-5.0

–––

0.54

-5.0

_GS= -12V, I_D= -3.0A 



Diode Forward Voltage 

V_GS= 0V, I_D= -4.5A 

1. Part number IRHF597230

2. Part number IRHF593230

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

(MeV/(mg/cm²))

@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V

38 ± 5%

61 ± 5%

84 ± 5%

270 ± 7.5%

330 ± 7.5%

350 ± 7.5%

35 ± 7.5%

31 ± 7.5%

28 ± 7.5%

-200

-50

-75

–––

-35

-250

-200

-150

-100

-50

LET=38 ± 5%

LET=61 ± 5%

LET=84 ± 5%

Bias VGS (V)

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

2017-01-30

IRHF597230

Pre-Irradiation

100

VGS

-15V

-12V

VGS

-15V

-12V

-7.0V

-5.0V

-4.5V

-4.3V

-4.0V

TOP

-7.0V

-5.0V

-4.5V

-4.3V

-4.0V

BOTTOM -3.7V

-3.7V

20µs PULSE WIDTH

Tj = 150°C

20µs PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

0.0

100

-4.5A

T = 25 C

T = 150 C

= -50V

20µs PULSE WIDTH

=-10V

-60 -40 -20

20 40 60 80 100 120 140 160

3.5

4.0

4.5

5.0

5.5 6.0 6.5

T , Junction Temperature ( C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

2000

1600

1200

800

400

= -4.5A

= 0V,

f = 1MHz

gd , ds

= C + C

SHORTED

=-160V

=-100V

=-40V

iss

= C

rss

= C + C

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

Q , Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

2017-01-30

IRHF597230

Pre-Irradiation

100

OPERATION IN THIS AREA LIMITED

BY R (on)

100s

T = 150 C

1ms

T = 25 C

10ms

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.5

1.5

2.5

3.5

4.5

5.5

100

1000

-V ,Source-to-DrainVoltage(V)

-V

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

350

5.0

TOP

-2.0A

-2.8A

300

BOTTOM -4.5A

4.0

3.0

2.0

1.0

0.0

250

200

150

100

125

150

100

125

( C)

150

( C)

Starting T , Junction Temperature

T , Case Temperature

Fig 10. Maximum Avalanche Energy

Fig 9. Maximum Drain Current Vs. Case Temperature

Vs. Drain Current

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

2017-01-30

IRHF597230

Pre-Irradiation

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

-12V

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

Fig 14b. Switching Time Waveforms

Fig 14a. Switching Time Test Circuit

2017-01-30

IRHF597230

Pre-Irradiation

Case Outline and Dimensions - TO-205AF (TO-39)

LEGEND

1- SOURCE

2- GATE

3- DRAIN

IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000

Data and specifications subject to change without notice.

2017-01-30

IRHF597230

Pre-Irradiation

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

2017-01-30

IRHF597230SCS [INFINEON]

相关型号：

IRHF63230

IRHF67230

IRHF67230_15

IRHF7110

IRHF7110PBF

IRHF7110SCS

IRHF7110SCV

IRHF7130

IRHF7130PBF

IRHF7210

IRHF7210PBF

IRHF7230