IRHF597230SCS [INFINEON]

Power Field-Effect Transistor,;
IRHF597230SCS
型号: IRHF597230SCS
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor,

开关 脉冲 晶体管
文件: 总8页 (文件大小:363K)
中文:  中文翻译
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PD-94550A  
IRHF597230  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE TO-205AF (TO-39)  
200V, P-CHANNEL  
TECHNOLOGY  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF597230  
IRHF593230  
100 kRads(Si)  
300 kRads(Si)  
-4.5A  
-4.5A  
0.54  
0.54  
Features  
Description  
IR HiRel R5 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for both Total Dose and Single Event  
Effect (SEE) with useful performance up to LET of 80 (MeV/  
(mg/cm2). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications  
such as DC-DC converters and motor controllers. These  
devices retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical parameters.  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
-4.5  
ID @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID @ VGS = -12V, TC = 100°C Continuous Drain Current  
-3.0  
-18  
25  
A
IDM  
Pulsed Drain Current  
W
W/°C  
V
PD @TC = 25°C  
Maximum Power Dissipation  
0.2  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
± 20  
157  
VGS  
EAS  
IAR  
mJ  
A
-4.5  
2.5  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
-25  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
0.98 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2017-01-30  
IRHF597230  
Pre-Irradiation  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
VGS = 0V, ID = -1.0mA  
V/°C Reference to 25°C, ID = -1.0mA  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
-200 ––– –––  
––– -0.21 –––  
––– ––– 0.54  
-2.0 ––– -4.0  
V
BVDSS/TJ  
RDS(on)  
VGS = -12V, ID = -3.0A   
  
V
VGS(th)  
VDS = VGS, ID = -1.0mA  
Gfs  
IDSS  
Forward Transconductance  
3.6  
––– –––  
S
V
DS = -15V, ID = -3.0A   
VDS = -160V, VGS = 0V  
DS = -160V,VGS = 0V,TJ =125°C  
VGS = -20V  
GS = 20V  
––– ––– -10  
––– ––– -25  
––– ––– -100  
––– ––– 100  
––– –––  
––– –––  
––– –––  
––– –––  
––– –––  
––– –––  
Zero Gate Voltage Drain Current  
µA  
nA  
V
IGSS  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
V
QG  
QGS  
QGD  
td(on)  
tr  
40  
8.5  
15  
25  
30  
50  
ID = -4.5A  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
nC  
ns  
VDS = -100V  
V
GS = -12V  
VDD = -100V  
ID = -4.5A  
td(off)  
tf  
RG = 7.5  
VGS = -12V  
––– ––– 120  
Measured from Drain lead (6mm / 0.25in  
from package) to Source lead (6mm/ 0.25  
in from package) with Source wire inter-  
nally bonded from Source pin to Drain pin  
Ls +LD  
Total Inductance  
–––  
7.0  
–––  
nH  
pF  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
––– 1340 –––  
––– 190 –––  
–––  
VGS = 0V  
VDS = -25V  
20  
–––  
ƒ = 1.0MHz  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
IS  
Continuous Source Current (Body Diode)  
Pulsed Source Current (Body Diode)   
Diode Forward Voltage  
––– ––– -4.5  
A
ISM  
VSD  
trr  
––– ––– -18  
––– ––– -5.0  
––– ––– 200  
V
TJ =25°C,IS = -4.5A, VGS= 0V  
TJ=25°C, IF= -4.5A, VDD 25V  
di/dt = -100A/µs   
Reverse Recovery Time  
ns  
µC  
Qrr  
Reverse Recovery Charge  
––– –––  
1.2  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
ton  
Forward Turn-On Time  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
–––  
Typ.  
–––  
Max.  
5.0  
Units  
°C/W  
RJC  
RJA  
Junction-to-Ambiet (Typical Socket Mount)  
–––  
–––  
175  
°C/W  
Footnotes:  
Repetitive Rating; Pulse width limited by maximum junction temperature.  
VDD = -50V, starting TJ = 25°C, L = 15.5mH, Peak IL = -4.5A, VGS = -12V  
ISD -4.5A, di/dt -360A/µs, VDD -200V, TJ 150°C  
Pulse width 300 µs; Duty Cycle 2%  
Total Dose Irradiation with VGS Bias. –12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.  
Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.  
2
2017-01-30  
IRHF597230  
Pre-Irradiation  
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance  
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose  
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using  
the same drive circuitry and test conditions in order to provide a direct comparison.  
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation   
100 kRads (Si)1  
300 kRads (Si)2  
Parameter  
Units  
Test Conditions  
Min.  
-200  
-2.0  
–––  
–––  
–––  
Max.  
–––  
-4.0  
-100  
100  
-10  
Min.  
-200  
-2.0  
–––  
–––  
–––  
Max.  
–––  
-5.0  
-100  
100  
-10  
BVDSS  
VGS(th)  
IGSS  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
V
VGS = 0V, ID = -1.0mA  
VDS = VGS, ID = -1.0mA  
VGS = -20V  
V
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
nA  
nA  
µA  
IGSS  
VGS = 20V  
IDSS  
VDS = -160V, VGS = 0V  
Static Drain-to-Source   
On-State Resistance (TO-3)  
RDS(on)  
–––  
0.505  
–––  
0.505  
VGS = -12V, ID = -3.0A   
  
Static Drain-to-Source   
On-State Resistance (TO-39)  
RDS(on)  
VSD  
–––  
–––  
0.54  
-5.0  
–––  
–––  
0.54  
-5.0  
V
GS = -12V, ID = -3.0A   
  
Diode Forward Voltage   
V
VGS = 0V, ID = -4.5A   
1. Part number IRHF597230  
2. Part number IRHF593230  
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects  
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Typical Single Event Effect Safe Operating Area  
VDS (V)  
LET  
Energy  
(MeV)  
Range  
(µm)  
(MeV/(mg/cm2))  
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V  
38 ± 5%  
61 ± 5%  
84 ± 5%  
270 ± 7.5%  
330 ± 7.5%  
350 ± 7.5%  
35 ± 7.5%  
31 ± 7.5%  
28 ± 7.5%  
-200  
-200  
-200  
-200  
-200  
-200  
-200  
-200  
-200  
-200  
-50  
-75  
–––  
–––  
-35  
-250  
-200  
-150  
-100  
-50  
LET=38 ± 5%  
LET=61 ± 5%  
LET=84 ± 5%  
0
0
5
10  
Bias VGS (V)  
15  
20  
Fig a. Typical Single Event Effect, Safe Operating Area  
For Footnotes, refer to the page 2.  
3
2017-01-30  
IRHF597230  
Pre-Irradiation  
100  
10  
1
100  
10  
1
VGS  
-15V  
-12V  
VGS  
-15V  
-12V  
-7.0V  
-5.0V  
-4.5V  
-4.3V  
-4.0V  
TOP  
TOP  
-7.0V  
-5.0V  
-4.5V  
-4.3V  
-4.0V  
BOTTOM -3.7V  
BOTTOM -3.7V  
-3.7V  
-3.7V  
20µs PULSE WIDTH  
Tj = 150°C  
20µs PULSE WIDTH  
Tj = 25°C  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
10  
1
-4.5A  
=
I
D
°
T = 25 C  
J
°
T = 150 C  
J
V
= -50V  
DS  
20µs PULSE WIDTH  
V
=-10V  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
3.5  
4.0  
4.5  
5.0  
5.5 6.0 6.5  
T , Junction Temperature ( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance Vs. Temperature  
20  
2000  
1600  
1200  
800  
400  
0
I
D
= -4.5A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
V
V
V
=-160V  
=-100V  
=-40V  
iss  
gs  
DS  
DS  
DS  
C
= C  
gd  
rss  
C
= C + C  
ds  
16  
12  
8
oss  
gd  
C
iss  
C
oss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
C
rss  
0
0
10  
20  
30  
40  
50  
1
10  
100  
Q , Total Gate Charge (nC)  
G
-V , Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
4
2017-01-30  
IRHF597230  
Pre-Irradiation  
100  
10  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R (on)  
DS  
100s  
°
T = 150 C  
J
1ms  
1
°
T = 25 C  
J
10ms  
DC  
0.1  
0.01  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
V
= 0 V  
GS  
0.1  
0.5  
1.5  
2.5  
3.5  
4.5  
5.5  
1
10  
100  
1000  
-V ,Source-to-DrainVoltage(V)  
SD  
-V  
, Drain-to-Source Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode Forward Voltage  
Fig 8. Maximum Safe Operating Area  
350  
5.0  
I
D
TOP  
-2.0A  
-2.8A  
300  
BOTTOM -4.5A  
4.0  
3.0  
2.0  
1.0  
0.0  
250  
200  
150  
100  
50  
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
°
( C)  
150  
°
( C)  
Starting T , Junction Temperature  
T , Case Temperature  
J
C
Fig 10. Maximum Avalanche Energy  
Fig 9. Maximum Drain Current Vs. Case Temperature  
Vs. Drain Current  
10  
D = 0.50  
0.20  
1
0.10  
0.05  
P
0.02  
DM  
0.01  
0.1  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T =P  
J
x Z  
+ T  
DM  
thJC C  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
5
2017-01-30  
IRHF597230  
Pre-Irradiation  
Fig 12b. Unclamped Inductive Waveforms  
Fig 12a. Unclamped Inductive Test Circuit  
-12V  
Fig 13a. Basic Gate Charge Waveform  
Fig 13b. Gate Charge Test Circuit  
Fig 14b. Switching Time Waveforms  
Fig 14a. Switching Time Test Circuit  
6
2017-01-30  
IRHF597230  
Pre-Irradiation  
Case Outline and Dimensions - TO-205AF (TO-39)  
LEGEND  
1- SOURCE  
2- GATE  
3- DRAIN  
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776  
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000  
Data and specifications subject to change without notice.  
7
2017-01-30  
IRHF597230  
IMPORTANT NOTICE  
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The  
data contained herein is a characterization of the component based on internal standards and is intended to  
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and  
analysis to determine suitability in the application environment to confirm compliance to your system requirements.  
With respect to any example hints or any typical values stated herein and/or any information regarding the application of  
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without  
limitation warranties on non- infringement of intellectual property rights and any third party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this  
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of  
the product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any  
customer’s technical departments to evaluate the suitability of the product for the intended applications and the  
completeness of the product information given in this document with respect to applications.  
For further information on the product, technology, delivery terms and conditions and prices, please contact your local  
sales representative or go to (www.infineon.com/hirel).  
WARNING  
Due to technical requirements products may contain dangerous substances. For information on the types in question,  
please contact your nearest Infineon Technologies office.  
8
2017-01-30  

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