IRHF597230SCS [INFINEON]
Power Field-Effect Transistor,;型号: | IRHF597230SCS |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:363K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94550A
IRHF597230
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
200V, P-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF597230
IRHF593230
100 kRads(Si)
300 kRads(Si)
-4.5A
-4.5A
0.54
0.54
Features
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 80 (MeV/
(mg/cm2). The combination of low RDS(on) and low gate
charge reduces the power losses in switching applications
such as DC-DC converters and motor controllers. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
-4.5
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-3.0
-18
25
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
0.2
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
157
VGS
EAS
IAR
mJ
A
-4.5
2.5
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
-25
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
Weight
For Footnotes, refer to the page 2.
1
2017-01-30
IRHF597230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = -1.0mA
V/°C Reference to 25°C, ID = -1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
-200 ––– –––
––– -0.21 –––
––– ––– 0.54
-2.0 ––– -4.0
V
BVDSS/TJ
RDS(on)
VGS = -12V, ID = -3.0A
V
VGS(th)
VDS = VGS, ID = -1.0mA
Gfs
IDSS
Forward Transconductance
3.6
––– –––
S
V
DS = -15V, ID = -3.0A
VDS = -160V, VGS = 0V
DS = -160V,VGS = 0V,TJ =125°C
VGS = -20V
GS = 20V
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
40
8.5
15
25
30
50
ID = -4.5A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
ns
VDS = -100V
V
GS = -12V
VDD = -100V
ID = -4.5A
td(off)
tf
RG = 7.5
VGS = -12V
––– ––– 120
Measured from Drain lead (6mm / 0.25in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1340 –––
––– 190 –––
–––
VGS = 0V
VDS = -25V
20
–––
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– ––– -4.5
A
ISM
VSD
trr
––– ––– -18
––– ––– -5.0
––– ––– 200
V
TJ =25°C,IS = -4.5A, VGS= 0V
TJ=25°C, IF= -4.5A, VDD ≤25V
di/dt = -100A/µs
Reverse Recovery Time
ns
µC
Qrr
Reverse Recovery Charge
––– –––
1.2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Parameter
Junction-to-Case
Min.
–––
Typ.
–––
Max.
5.0
Units
°C/W
RJC
RJA
Junction-to-Ambiet (Typical Socket Mount)
–––
–––
175
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L = 15.5mH, Peak IL = -4.5A, VGS = -12V
ISD -4.5A, di/dt -360A/µs, VDD -200V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. –12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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IRHF597230
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
300 kRads (Si)2
Parameter
Units
Test Conditions
Min.
-200
-2.0
–––
–––
–––
Max.
–––
-4.0
-100
100
-10
Min.
-200
-2.0
–––
–––
–––
Max.
–––
-5.0
-100
100
-10
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = -1.0mA
VDS = VGS, ID = -1.0mA
VGS = -20V
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
nA
nA
µA
IGSS
VGS = 20V
IDSS
VDS = -160V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.505
–––
0.505
VGS = -12V, ID = -3.0A
Static Drain-to-Source
On-State Resistance (TO-39)
RDS(on)
VSD
–––
–––
0.54
-5.0
–––
–––
0.54
-5.0
V
GS = -12V, ID = -3.0A
Diode Forward Voltage
V
VGS = 0V, ID = -4.5A
1. Part number IRHF597230
2. Part number IRHF593230
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V
38 ± 5%
61 ± 5%
84 ± 5%
270 ± 7.5%
330 ± 7.5%
350 ± 7.5%
35 ± 7.5%
31 ± 7.5%
28 ± 7.5%
-200
-200
-200
-200
-200
-200
-200
-200
-200
-200
-50
-75
–––
–––
-35
-250
-200
-150
-100
-50
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
0
5
10
Bias VGS (V)
15
20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
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2017-01-30
IRHF597230
Pre-Irradiation
100
10
1
100
10
1
VGS
-15V
-12V
VGS
-15V
-12V
-7.0V
-5.0V
-4.5V
-4.3V
-4.0V
TOP
TOP
-7.0V
-5.0V
-4.5V
-4.3V
-4.0V
BOTTOM -3.7V
BOTTOM -3.7V
-3.7V
-3.7V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-4.5A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.5
4.0
4.5
5.0
5.5 6.0 6.5
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
20
2000
1600
1200
800
400
0
I
D
= -4.5A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
V
V
V
=-160V
=-100V
=-40V
iss
gs
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
16
12
8
oss
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
10
20
30
40
50
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
4
2017-01-30
IRHF597230
Pre-Irradiation
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100s
°
T = 150 C
J
1ms
1
°
T = 25 C
J
10ms
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.5
1.5
2.5
3.5
4.5
5.5
1
10
100
1000
-V ,Source-to-DrainVoltage(V)
SD
-V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
350
5.0
I
D
TOP
-2.0A
-2.8A
300
BOTTOM -4.5A
4.0
3.0
2.0
1.0
0.0
250
200
150
100
50
0
25
50
75
100
125
150
25
50
75
100
125
°
( C)
150
°
( C)
Starting T , Junction Temperature
T , Case Temperature
J
C
Fig 10. Maximum Avalanche Energy
Fig 9. Maximum Drain Current Vs. Case Temperature
Vs. Drain Current
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
DM
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
DM
thJC C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-01-30
IRHF597230
Pre-Irradiation
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
-12V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
6
2017-01-30
IRHF597230
Pre-Irradiation
Case Outline and Dimensions - TO-205AF (TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.
7
2017-01-30
IRHF597230
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
2017-01-30
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