IRHF7210PBF [INFINEON]
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;![IRHF7210PBF](http://pdffile.icpdf.com/pdf2/p00248/img/icpdf/IRHF8234PBF_1501702_icpdf.jpg)
型号: | IRHF7210PBF |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 晶体管 |
文件: | 总1页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IRHF7234
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Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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IRHF7330SESCSPBF
Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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IRHF7430SEPBF
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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IRHF7430SESCS
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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IRHF7430SESCSPBF
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
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