IRHF63230 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39);
| 型号： | IRHF63230 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
| 文件： | 总9页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97311
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF67230
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF67230 100K Rads (Si)
0.145Ω 9.1A
IRHF63230 300K Rads (Si) 0.145Ω 9.1A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of very low
T0-39
Features:
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
R
and faster switching times reduces power
DS(on)
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
9.1
D
GS
GS
C
= 12V, T = 100°C Continuous Drain Current
C
5.7
36.4
25
A
D
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
23
mJ
A
AS
I
9.1
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
4.8
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
For footnotes refer to the last page
www.irf.com
1
09/16/11
IRHF67230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.22
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.145
Ω
V = 12V, I = 5.7A Ã
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
2.0
—
5.0
—
—
-9.6
—
—
—
4.0
—
—
10
25
V
mV/°C
S
V
= V , I = 1.0mA
GS(th)
DS
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= 15V, I
= 5.7A Ã
DS
I
Zero Gate Voltage Drain Current
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
45
12
30
17
30
40
25
V
= 20V
= -20V
GSS
GSS
GS
nA
V
GS
Q
Q
Q
V
= 12V, I = 9.1A
g
gs
gd
d(on)
r
GS
D
nC
V
= 100V
DS
t
t
t
t
V
DD
= 100V, I = 9.1A,
= 12V, R = 7.5Ω
GS G
D
V
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm/0.25in
from package)to Source lead (6mm/0.25in
from package)with Source wire interanally
bonded from Source pin to Drain pad
nH
S
D
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1374
214
4.2
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
GS
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
R
g
Gate Resistance
Ω
1.1
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
9.1
36.4
1.2
317
2.91 µC
S
SM
SD
rr
A
V
ns
T = 25°C, I = 9.1A, V
= 0V Ã
j
S
GS
T = 25°C, I = 9.1A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 50V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
5.0
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
RadiationCharacteristics
IRHF67230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads(Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
200
2.0
—
—
—
—
4.0
100
-100
1.0
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
V
= 20V
GS
GSS
nA
µA
I
V
GS
= -20V
GSS
I
V
= 200V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
DS(on)
—
—
0.145
1.2
Ω
V
V
= 12V, I = 5.7A
D
= 0V, I = 9.1A
D
GS
V
SD
V
GS
1. Part numbers IRHF67230, IRHF63230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
42 ± 5%
61 ± 5%
90 ± 5%
2450 ± 5%
825 ± 5%
1470 ± 5%
205 ± 5%
66 ± 7.5%
80 ± 5%
200
200
170
200
200
170
200
200
-
190
190
-
250
200
150
100
50
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
0
-5
-10
-15
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF67230
Pre-Irradiation
100
100
10
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
µ
60 s PULSE WIDTH
60µs PULSE WIDTH
Tj =150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 9.1A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
0.1
2
3
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHF67230
500
450
400
350
300
250
200
150
100
500
400
300
200
100
I
= 9.1A
D
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
V
= 12V
GS
4
6
8
10
12 14 16
18 20
0
10
20
30
40
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
260
250
240
230
220
210
200
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
= 250µA
= 1.0mA
= 150mA
D
D
D
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T , Temperature ( °C )
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
BreakdownVoltageVsTemperature
Temperature
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5
IRHF67230
Pre-Irradiation
2800
2400
2000
1600
1200
800
20
18
16
14
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 160V
I
= 9.1A
DS
DS
DS
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= 100V
= 40V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
6
4
C
400
rss
FOR TEST CIRCUIT
SEE FIGURE 17
2
0
1
0
10
100
0
5
10 15 20 25 30 35 40
Q Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
10
8
T
= 150°C
J
6
T = 25°C
J
4
1.0
0.1
2
V
= 0V
GS
0
0
0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
, Source-to-Drain Voltage (V)
25
50
T
75
100
125
150
V
, Case Temperature (°C)
SD
C
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHF67230
50
40
30
20
10
0
100
OPERATION IN THIS AREA LIMITED BY RDS(ON)
I
D
TOP
9.10A
5.76A
BOTTOM 4.07A
10
1
100µs
1ms
10ms
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. DrainCurrent
10
D = 0.50
P
DM
0.20
1
t
1
0.10
t
2
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
Notes:
1. Duty Factor D = t1/t2
0.01
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHF67230
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHF67230
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
Total Dose Irradiation with V
Bias.
= 0 during
GS
12 volt V
applied and V
DS
Á V
= 50V, starting T = 25°C, L = 0.56mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 9.1A, V
= 12V
L
GS
Å
Total Dose Irradiation with V
Bias.
 I
≤ 9.1A, di/dt ≤ 347A/µs,
DS
= 0 during
SD
DD
160 volt V
applied and V
V
≤ 200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1 - SOURCE
2 - GATE
3 - DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2011
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9
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