IRHF597110SCS [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHF597110SCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94176E
IRHF597110
100V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
R
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF597110
IRHF593110
100 kRads(Si)
300 kRads(Si)
-2.6A
-2.6A
1.0
1.0
Description
Features
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 80
(MeV/(mg/cm2). The combination of low RDS(on) and low
gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching and temperature stability of electrical
parameters.
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Parameter
Value
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-2.6
A
-1.6
-10.4
15
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
0.12
± 20
30
VGS
EAS
IAR
mJ
A
-2.6
1.5
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
6.6
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
Weight
For Footnotes, refer to the page 2.
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2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = -1.0mA
V/°C Reference to 25°C, ID = -1.0mA
-100 ––– –––
––– -0.13 –––
V
BVDSS/TJ
RDS(on)
––– –––
––– –––
1.2
1.0
V
GS = -12V, ID1 = -2.6A
GS = -12V, ID2 = -1.6A
VDS = VGS, ID = -1.0mA
DS = -15V, ID2 = -1.6A
VDS = -80V, VGS = 0V
DS = -80V,VGS = 0V,TJ =125°C
VGS = -20V
GS = 20V
Static Drain-to-Source On-Resistance
V
VGS(th)
Gate Threshold Voltage
-2.0 ––– -4.0
1.3 ––– –––
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
V
S
Gfs
IDSS
Forward Transconductance
V
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
11
3.0
4.0
20
20
30
95
ID1 = -2.6A
VDS = -50V
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
ns
VGS = -12V
VDD = -50V
ID1= -2.6A
RG = 7.5
td(off)
tf
VGS = -12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 370 –––
––– 100 –––
–––
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
7.0
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– -2.6
A
ISM
VSD
trr
––– ––– -10.4
––– ––– -5.0
––– ––– 100
––– ––– 250
V
TJ = 25°C,IS = -2.6A, VGS = 0V
Reverse Recovery Time
ns TJ = 25°C, IF = -2.6A, VDD ≤-25V
nC di/dt = -100A/µs
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
–––
Typ.
–––
Max.
8.3
Units
Junction-to-Case
RJC
°C/W
Junction-to-Ambient
–––
–––
RJA
175
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L =8.9mH, Peak IL = -2.6A, VGS = -12V
ISD -2.6A, di/dt -120A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
300k Rads (Si)2
Symbol
Parameter
Units
Test Conditions
Min.
-100
-2.0
–––
–––
–––
Max.
–––
-4.0
-100
100
-10
Min.
-100
-2.0
–––
–––
–––
Max.
–––
-5.0
-100
100
-10
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = -1.0mA
VDS = VGS, ID = -1.0mA
VGS = -20V
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
nA
nA
µA
IGSS
VGS = 20V
IDSS
VDS = -80V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
RDS(on)
–––
0.916
–––
0.916
VGS = -12V, ID2 = -1.6A
RDS(on)
VSD
–––
–––
0.916
-5.0
–––
–––
0.916
-5.0
VGS = -12V, ID2 = -1.6A
VGS = 0V, IS = -2.6A
Diode Forward Voltage
V
1. Part numbers IRHF597110
2. Part numbers IRHF593110
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
(MeV/(mg/cm2))
0V
5V
10V
15V
20V
38 ± 5%
61 ± 5%
84 ± 5%
270 ± 7.5%
330 ± 7.5%
350 ± 7.5%
35 ± 7.5%
30 ± 7.5%
28 ± 7.5%
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-25
–––
-120
-100
-80
-60
-40
-20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
5
10
15
20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
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2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
Pre-Irradiation
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
-5.0V
-5.0V
BOTTOM -5.0V
BOTTOM -5.0V
1
1
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
-2.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
10
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
1
5
6
7
8
9
10
11
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
600
20
V
= 0V,
f = 1MHz
I
D
= -2.6A
GS
V
V
V
=-80V
=-50V
=-20V
C
= C + C
C
SHORTED
DS
DS
DS
iss
gs gd ,
ds
C
= C
rss
gd
500
400
300
200
100
0
C
= C + C
gd
oss
ds
16
12
8
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
2
4
6
8
10
12
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
Pre-Irradiation
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
60
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
TOP
-1.2A
-1.6A
BOTTOM -2.6A
50
40
30
20
10
0
25
50
75
100
125
150
25
50
75
100
125
°
150
°
Starting T , Junction Temperature ( C)
J
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
10
D = 0.50
0.20
0.10
0.05
1
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Dutyfactor D =
t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
Pre-Irradiation
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
2018-12-10
6
International Rectifier HiRel Products, Inc.
IRHF597110
Pre-Irradiation
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7
2018-12-10
International Rectifier HiRel Products, Inc.
IRHF597110
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
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2018-12-10
International Rectifier HiRel Products, Inc.
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