IRGPC20M [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 8.0A ）
| 型号： | IRGPC20M |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) |
| 文件： | 总6页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1136
IRGPC20M
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
Fast IGBT
Features
C
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
VCES = 600V
10kHz) See Fig. 1 for Current vs. Frequency curve
G
V
CE(sat) ≤ 2.3V
@VGE = 15V, IC = 8.0A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
13
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
8.0
26
A
ICM
ILM
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
26
tsc
10
µs
V
VGE
±20
5.0
60
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 1
C-315
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IRGPC20M
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.42
2.0
2.7
2.5
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.3
—
VGE = 15V
—
V
IC = 13A
See Fig. 2, 5
—
—
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.7 3.8
—
S
VCE = 100V, IC = 8.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
16
3.6
6.0
29
24
5.2
9.0
—
IC = 8.0A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
22
—
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
270 400
280 510
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.14
0.86
1.0
—
—
mJ
µs
See Fig. 9, 10, 11, 14
2.0
—
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
27
21
—
—
—
—
—
—
—
—
—
ns
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
370
420
1.4
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
365
47
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
4.8
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 50Ω, ( See fig. 13a )
C-316
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IRGPC20M
20
16
For bo th:
T riang ula r w av e:
D u ty cycle : 5 0%
T
T
=
1 2 5 °C
90 °C
J
=
sink
G a te drive a s sp e cifie d
P ow er D iss ipa tion
=
15 W
C lam p voltage:
80% of ra ted
12
Sq u a re w a ve:
60% of ra ted
voltag e
8
4
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
100
10
1
T = 25°C
J
T = 150°C
J
T = 150°C
J
10
TJ = 25°C
VCC = 100V
VGE = 15V
20µs PULSE WIDTH
5µs PULSE WIDTH
A
A
1
5
10
15
20
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-317
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IRGPC20M
5.0
4.0
3.0
2.0
1.0
0.0
14
12
10
8
VGE = 15V
80µs PULSE WIDTH
VGE = 15V
IC = 16A
IC = 8.0A
IC = 4.0A
6
4
2
A
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T , Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-318
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IRGPC20M
600
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GE
ies
res
oes
VCE = 400V
IC = 8.0A
= C + C
,
C
ce
SHORTED
ge
gc
gc
= C
= C + C
ce
gc
C
ies
400
200
0
C
oes
4
C
res
A
A
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.900
0.896
0.892
0.888
0.884
0.880
10
V
V
T
I
= 480V
= 15V
= 25°C
= 8.0A
Ω
= 50
= 15V
= 480V
R
V
V
CC
G E
C
G
G E
CC
C
I
I
I
= 16A
= 8.0A
= 4.0A
C
C
C
1
A
0.1
10
20
30
40
50
60
-60 -40 -20
0
20
4 0
60
80 10 0 120 140 160
T , Case Temperature (°C)
R G , Gate Resistance (
Ω)
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-319
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IRGPC20M
4.0
100
10
1
Ω
= 50
R
T
V
V
G
VGE = 20V
TJ = 125°C
= 150°C
= 480V
= 15V
C
CC
G E
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
A
A
1
10
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-E mitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-320
To Order
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