IRGPC30K [INFINEON]
Fit Rate / Equivalent Device Hours; FIT率/等效器件小时
| 型号： | IRGPC30K |
| 厂家： | 
Infineon |
| 描述： | Fit Rate / Equivalent Device Hours |
| 文件： | 总35页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Quarterly Reliability Report
for
T0247 / T0220 Products Manufactured at
IRGB
IGBT / CoPack
ISSUE.3.
October 1997
IGBT / CoPack
Quarterly Reliability Report
Page 1 of 35
Contents
1
2
3
4
5
Introduction
Reliability Information
Environmental Test Results
Environmental Test Conditions / Schematics
Device Package and Frequency Listings
IGBT / CoPack
Quarterly Reliability Report
Page 2 of 35
Introduction
The reliability report is a summary of the test data collated since the
implementation of the reliability programme. This report will be periodically
updated typically on a quarterly basis. Future publications of this report will
also include as appropriate additional information to assist the user in the
interpretation of the data provided. The programme covers only IGBT /
CoPack manufactured products at IRGB, Holland Road, Oxted. The
reliability data provided in this report are for the package types TO247 and
TO220.
Further information regarding reliability data is available in the IR data book
IGBT-3, pages E-65-E-72. This also, is available from the Oxted office.
Reliability Engineering _____________________________________
Quality Manager
Date
_____________________________________
_____________________________________
IGBT / CoPack
Quarterly Reliability Report
Page 3 of 35
Section
2
Reliability Information
IGBT / CoPack
Quarterly Reliability Report
Page 4 of 35
Fit Rate / Equivalent Device Hours
Traditionally, reliability results have been presented in terms of Mean-Time-To-Failure
or Median-Time-To-Failure. While these results have their value, they do not
necessarily tell the designer what he most needs to know. For example, the Median-
Time-To-Failure tells the engineer how long it will take for half a particular lot of
devices to fail. Clearly no designer wishes to have a 50% failure rate within a
reasonable equipment lifetime. Of greater interest, therefore, is the time to failure of a
much smaller percentage of devices say 1% or 0.1%. For example, in a given
application one failure per hundred units over five years is an acceptable failure rate
for the equipment, the designer knows that time to accumulate 1% failure of that
components per unit, then no more than 0.1% of the components may fail in five
years. Therefore, the IGBT / CoPack reliability or operating-life data is presented in
terms of the time it will take to produce a prescribed number of failures under given
operating conditions.
To obtain a perspective of failure rate from an example, let us assume that an
electronic system contains 1,000 semiconductor devices, and that it can tolerate 1%
system failures per month. The equation for the device failure is:
l = Proportion allowed system failures
X
X
1
X
=
109
109
=
FITS
Time period
No. of devices
In the case of the example,
l =
0.01 Failures
720 Hours
1
=
14 FITS
1000 Devices
or 14 FITs or 14 failures per 109 devices hours.
IGBT / CoPack
Quarterly Reliability Report
Page 5 of 35
Using IGBT Reliability Information
Reliability is the probability that a semiconductor device will perform its
specified function in a given environment for a specified period of time.
Reliability is quality over time & environmental conditions.
Reliability can be defined as a probability of failure-free performance of a
required function, under a specified environment, for a given period of time.
The reliability of semiconductors has been extensively studied and the data
generated from these works is widely used in industry to estimate the
probabilities of system lifetimes. The reliability of a specific semiconductor
device is unique to the technology process used in fabrication and to the
external stress applied to the device.
In order to understand the reliability of specific product like the IGBT it is
useful to determine the failure rate associated with each environmental stress
that IGBT's encounter.
The values reported in this report are at a 60% upper confidence limit and the
equivalent device hours at state of working temperature of 90°C. It has been
shown that the failure rate of semiconductors in general. when followed for a
long period of time, exhibits what has been called a "Bathtub Curve" when
plotted against time for a given set of environmental conditions.
Classic Bathtub Curve for failure rate of solid state devices
l ( t )
Infant
Failures
Wearout
Failures
Random Failures
Log Time
t
IGBT / CoPack
Quarterly Reliability Report
Page 6 of 35
The IGBT Structure
The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the
terminal called Collector is, actually, the Emitter of the PNP. In spite of its
similarity to the cross-section of a power MOSFET, operating of the two
transistors is fundamentally different, the IGBT being a minority carrier device.
Except for the P + substrate is virtually identical to that of a power MOSFET,
both devices share a similar polysilicon gate structure and P wells with N +
source contacts. In both devices the N-type material under the P wells is sized
in thickness and reistivity to sustain the full voltage rating of the device.
However, in spite of the many similarities, he physical operation of the IGBT is
closer to that of a bipolar transistor than to that of a power MOSFET. This is
due to the P + substrate which is responsible for the minority carrier injection
into the N regtion and the resulting conductivity modulation, a significant share
of the conduction losses occur in the N region, typically 70% in a 500v device.
The part number itself contains in coded form the key features of the IGBT. An
explanation of the nomenclature in contained below.
IR
G
4
B
C
4
0
S
D
Diode
International Rectifier
IGBT
Speed Designator
S Standard
F Fast
Generation
Modifier
Die Size
Voltage Designator
M Short Cicuit Fast
U UltraFast
K Short Circuit UltraFast
Package Designator
B T0220
C
600v E 800v
900v G 1000v
1200v
F
P T0247
H
Basic IGBT Structure
IGBT / CoPack
Quarterly Reliability Report
Page 7 of 35
Section
3
Environmental Test Results
IGBT / CoPack
Quarterly Reliability Report
Page 8 of 35
HIGH TEMPERATURE REVERSE BIAS (HTRB)
T0247 Package
Junction Temperature :
Applied Bias:
Tj = as specified below
Vge = 0V
Vce = 80% of maximum rated BVces
N Channel
MID FREQUENCY ( Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE TEMP VOLTAGE QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
CODE
MAX
TEST
TIME
@ 90°C
FITs
#
MODE
(deg C)
150
(V)
(hours)
(note b)
(note a)
IRGPC30FD2
IRGPC50FD2
9344
9237
600
600
20
59
1080 0
2008 0
2.01E+06
1.10E+07
456
83
150
TOTALS
79
3088 0
1.30E+07
70
N Channel
HIGH FREQUENCY ( Ultra-Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE TEMP VOLTAGE QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
CODE
MAX
TEST
TIME
@ 90°C
FITs
#
MODE
(deg C)
150
(V)
(hours)
(note b)
(note a)
IRGPC40U
9538
9620
9237
9643
9346
9450
600
20
20
20
20
20
10
2008 0
2008 0
1008 0
2030 0
1080 0
1008 0
3.73E+06
3.73E+06
1.87E+06
3.78E+06
2.01E+06
9.37E+05
245
245
489
243
456
977
IRGPC40U
150
600
600
IRGPC40UD2
IRG4PC40UD2
IRGPC50UD2
IRGPH60UD2
150
150
600
150
600
150
1200
TOTALS
110
9142 0
1.61E+07
57
NOTES
a.
b.
One FIT represents one failure in one billion (1.0E+09) hours.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 9 of 35
HIGH TEMPERATURE REVERSE BIAS (HTRB)
T0220 Package
Junction Temperature:
Applied Bias:
Tj = as specified below
Vge = 0V
Vce = 80% of maximum rated BVces
N Channel
LOW FREQUENCY ( Standard )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP VOLTAGE QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
MAX
TEST
TIME
@ 90°C
FITs
#
MODE
(note b)
(deg C)
150
(V)
(hours)
(note a)
IRGBC20S
IRGBC40S
9544
9606
600
600
20
20
2008 0
2008 0
3.73E+06
3.73E+06
245
245
150
TOTALS
40
4016 0
7.47E+06
123
N Channel
MID FREQUENCY ( Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP VOLTAGE QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
MAX
TEST
TIME
@ 90°C
FITs
#
MODE
(note b)
(deg C)
(V)
600
(hours)
(note a)
IRGBC30F
IRGNC30FD2
IRGBF30F
9537
9640
9613
150
150
150
20
20
20
2008 0
2007 0
2008 0
3.73E+06
3.73E+06
3.73E+06
245
245
245
600
900
TOTALS
60
6023 0
1.12E+07
82
NOTES
a.
b.
One FIT represents one failure in one billion (1.0E+09) hours.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 10 of 35
HIGH TEMPERATURE REVERSE BIAS (HTRB)
T0220 Package
Junction Temperature:
Applied Bias:
Tj = as specified below
Vge = 0V
Vce = 80% of maximum rated BVces
N Channel
HIGH FREQUENCY ( Ultra-Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP VOLTAGE QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
MAX
TEST
TIME
@ 90°C
FITs
#
MODE
(note b)
(deg C)
150
(V)
(hours)
(note a)
IRGBC20K
IRGBC30U
IRGB440U
9613
600
20
20
20
2008 0
2008 0
2008 0
3.73E+06
3.73E+06
3.73E+06
245
245
245
9605
9643
150
600
400
150
TOTALS
60
6024 0
1.12E+07
82
NOTES
a.
b.
One FIT represents one failure in one billion (1.0E+09) hours.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 11 of 35
HIGH TEMPERATURE GATE BIAS (HTGB)
Junction Temperature:
Tj = as specified below
Vc = Ve = 0V
Vg = as specified
N Channel
MID FREQUENCY ( Fast )
FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP
GATE
BIAS
QTY ACTUAL
FAILURES
DEV-HRS 90°C & 60% UCL
TEST
TIME
@ 90°C
FITs
#
MODE
(deg C)
150
(V)
(hours)
(note b)
(note a)
IRGPF30F
9642
9237
20
20
20
20
2007 0
2088 0
2.46E+05
2.56E+05
3724
3579
IRGPC50FD2
150
TOTALS
40
4095 0
5.02E+05
1825
N Channel
HIGH FREQUENCY ( Ultra-Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP
GATE
QTY ACTUAL
TEST
FAILURES
DEV-HRS 90°C & 60% UCL
BIAS
@ 90°C
FITs
TIME
#
MODE
(deg C)
150
(V)
(hours)
(note b)
(note a)
IRGPC40U
9538
9620
9721
9643
20
20
20
20
20
2008 0
2008 0
2213 0
2039 0
2.46E+05
2.46E+05
2.71E+05
2.50E+05
3722
3722
3377
3665
IRGPC40U
150
20
20
20
IRG4PC50U
IRG4PC40UD2
150
150
TOTALS
80
8268 0
1.01E+06
904
NOTES
a.
b.
One FIT represents one failure in one billion (1.0E+09) hours.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 12 of 35
HIGH TEMPERATURE GATE BIAS (HTGB)
Junction Temperature:
Tj = as specified below
Vc = Ve = 0V
Vg = as specified
N Channel
LOW FREQUENCY ( Standard )
FAILURE RATE @
FITs
DEVICE
TYPE
TEMP
GATE
BIAS
ACTUAL
TEST
FAILURES
DEV-HRS
TIME
#
(deg C)
(hours)
(note b)
IRGBC20S
IRGBC40S
9544
9605
20
20
20
20
0
0
2.46E+05
2.46E+05
TOTALS
40
0
4.92E+05
N Channel
TYPE
MID FREQUENCY ( Fast )
EQUIVALENT FAILURE RATE @
DATE
TEMP
QTY ACTUAL
DEV-HRS 90°C & 60% UCL
BIAS
(V)
@ 90°C
FITs
TIME
MODE
(hours)
(note a)
3722
IRGBC30F
150
20
20
20
20
2008 0
IRGBC30FD2
IRGBC30FD2
IRGBF30F
150
150
150
2095 0
2007 0
2008 0
3567
3724
3722
TOTALS
8118 0
921
NOTES
b.
FAILURE MODES:
I
Quarterly Reliability Report
HIGH TEMPERATURE GATE BIAS (HTGB)
T0220 Package
Junction Temperature:
Applied Bias:
Tj = as specified below
Vc = Ve = 0V
Vg = as specified
N Channel
HIGH FREQUENCY ( Ultra-Fast )
EQUIVALENT FAILURE RATE @
DEVICE
TYPE
DATE
CODE
TEMP
GATE
BIAS
QTY ACTUAL
TEST
DEV-HRS
@ 90°C
TIME
#
MODE
FITs
(deg C)
150
(V)
(hours)
9613
9605
9641
9643
20
20
20
20
20
2008 0
2008 0
2007 0
2054 0
3722
3722
3724
3639
150
20
20
20
150
150
TOTALS
80
8077 0
925
NOTES
a.
b.
One FIT represents one failure in one billion (1.0E+09) hours.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 14 of 35
TEMPERATURE & HUMIDITY (THB)
T0247 Package
Junction Temperature:
85°C
Relative Humidity:
Applied Bias:
85% rh
Vge = 0V
Vce = as specified
N Channel
MID FREQUENCY ( Fast )
DEVICE
TYPE
DATE COLLECTOR QTY
ACTUAL
FAILURES
CODE
VOLTAGE
TEST
TIME
#
MODE
(note b)
(V)
(hours)
IRGPF30F
9642
100
20
20
2000 0
2000 0
TOTALS
N Channel
HIGH FREQUENCY ( Ultra-Fast )
DEVICE
TYPE
DATE COLLECTOR QTY
ACTUAL
TEST
FAILURES
CODE
VOLTAGE
TIME
#
MODE
(V)
500
500
100
500
(hours)
(note b)
IRGPC40U
9538
9620
9643
9450
20
20
20
10
1504 3
1504 4
2051 0
1008 0
1
1
IRGPC40U
IRG4PC40UD2
IRGPH60UD2
TOTALS
70
6067 7
NOTES
b.
FAILURE MODES:
3 devices failed @ 1504hrs 85/85 and 4 devices failed @
1552 HRS 85/85 all the failures were due to termination
structure corrosion, caused by moisture ingression.
1.
IGBT / CoPack
Quarterly Reliability Report
Page 15 of 35
TEMPERATURE & HUMIDITY (THB)
T0220 Package
Junction Temperature:
85°C
Relative Humidity:
Applied Bias:
85% rh
Vge = 0V
Vce = as specified
N Channel
LOW FREQUENCY ( Standard )
DEVICE
TYPE
DATE COLLECTOR QTY
ACTUAL
TEST
FAILURES
CODE
VOLTAGE
TIME
#
MODE
(note b)
(V)
500
100
500
(hours)
IRGBC20S
IRGBC30S
IRGBC40S
9544
9643
9606
20
20
20
1008 0
2051 0
1008 0
TOTALS
60
4067 0
N Channel
MID FREQUENCY ( Fast )
DATE COLLECTOR QTY ACTUAL
DEVICE
TYPE
FAILURES
CODE
VOLTAGE
TEST
TIME
#
MODE
(note b)
1
(V)
600
900
100
(hours)
IRGBC30F
IRGBF30F
9537
9613
9640
20
20
20
1008 1
1008 0
2051 0
IRGBC30FD2
TOTALS
60
4067 1
NOTES
b.
FAILURE MODES:
1
1 device failed @ 1008hrs 85/85 it was due to termination
structure corrosion, caused by moisture ingression.
IGBT / CoPack
Quarterly Reliability Report
Page 16 of 35
TEMPERATURE & HUMIDITY (THB)
T0220 Package
Junction Temperature:
85°C
Relative Humidity:
Applied Bias:
85% rh
Vge = 0V
Vce = as specified
N Channel
DEVICE
HIGH FREQUENCY ( Ultra-Fast )
DATE COLLECTOR QTY
ACTUAL
TEST
FAILURES
# MODE
TYPE
CODE
VOLTAGE
TIME
(V)
100
100
500
(hours)
(note b)
IRG4BC30U
IRGB440U
IRGBC20K
9641
9643
9613
20
20
20
2000 0
2051 0
1008 3
1
TOTALS
60
5059 3
NOTES
b.
FAILURE MODES:
1
3 devices failed @ 1008hrs 85/85 all the failures were due
to termination structure corrosion, caused by moisture
ingression.
IGBT / CoPack
Quarterly Reliability Report
Page 17 of 35
TEMPERATURE CYCLING (T/C) Unbiased
T0247 Package
Temperature Cycle:
Cycle time:
Bias
Tmin = - 55°C, Tmax = + 150°C
25 minutes
None
N Channel
MID / HIGH FREQUENCY
DEVICE
TYPE
DATE QTY ACTUAL
CODE CYCLES
FAILURES
#
MODE
(note b)
IRGPC30FD2
IRGPC50FD2
IRGPC40U
9344
39
80
20
20
40
20
20
38
20
10
1000 0
2174 0
2008 0
2055 0
1087 0
1496 0
2086 0
1000 0
2015 0
1044 0
9237
9538
9620
9237
9643
9721
9346
9642
9450
IRGPC40U
IRGPC40UD2
IRG4PC40UD2
IRG4PC50U
IRGPC50UD2
IRGPF30F
IRGPH60UD2
TOTALS
307
15965 0
NOTES
b.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 18 of 35
TEMPERATURE CYCLING (T/C) Unbiased
T0220 Package
Temperatre Cycle:
Tmin = - 55°C, Tmax = + 150°C
Cycle Time
Bias
25 minutes
None
N Channel
LOW / MID / HIGH FREQUENCY
DEVICE
TYPE
DATE QTY ACTUAL
CODE CYCLES
FAILURES
#
MODE
(note b)
IRGBC20S
IRGBC40S
IRGBC30S
IRGBC30F
IRGBF30F
IRGBC20K
IRGBC30U
IRG4BC30U
IRGB440U
IRGBC30FD2
IRGBC30FD2
9544
20
20
20
20
20
20
20
20
20
20
20
2062 0
2008 0
2017 0
2008 0
2032 0
2032 0
2008 0
2015 0
2107 0
2077 0
2043 0
9606
9643
9537
9613
9613
9605
9614
9643
9640
9643
TOTALS
220
22409 0
NOTES
b.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 19 of 35
POWER CYCLING (P/C) unbiased
T0247 Package
Bias:
Set to give D T = 100°C
Temperature:
Duration:
Tj = D 100°C
10000 Cycles
Test Points:
2500, 5000, 10000 Nominal
N Channel
HIGH FREQUENCY ( Ultra-Fast )
FAILURES
DEVICE
TYPE
DATE QTY ACTUAL
CODE
(hours)
#
MODE
(note b)
IRGPC40U
9620
20
20
10000 0
10000 0
TOTALS
NOTES
b.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 20 of 35
ACCELERATED MOISTURE RESISTANCE (A/C) Unbiased
T0247 Package
Pressure:
Temperature:
Humidity:
Bias:
15 Ibs psig
121°C
100%
None
N Channel
MID / HIGH FREQUENCY
FAILURES
DEVICE
TYPE
DATE
CODE
QTY ACTUAL
(hours)
#
MODE
(note b)
IRGPF30F
9642
20
20
20
20
20
96 0
96 0
96 0
96 0
96 0
IRGPC40U
IRGPC40U
IRG4PC40UD2
IRG4PC50U
9538
9620
9643
9721
TOTALS
100
480 0
NOTES
b.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 21 of 35
ACCELERATED MOISTURE RESISTANCE (A/C) Unbiased
T0220 Package
Pressure:
Temperature:
Humidity:
Bias:
15 Ibs psig
121°C
100%
None
N Channel
LOW / MID / HIGH FREQUENCY
FAILURES
DEVICE
TYPE
DATE QTY ACTUAL
CODE
(hours)
#
MODE
(note b)
IRGBC20S
IRGBC30S
IRGBC40S
IRGBC30F
IRGBF30F
IRGBC20K
IRGBC30U
9544
20
20
20
20
20
20
20
96 0
96 0
96 0
96 0
96 0
96 0
96 0
9643
9606
9537
9613
9613
9606
TOTALS
140
672 0
NOTES
b.
FAILURE MODES:
IGBT / CoPack
Quarterly Reliability Report
Page 22 of 35
Section
4
Environmental Test Conditions / Schematics
IGBT / CoPack
Quarterly Reliability Report
Page 23 of 35
HIGH TEMPERATURE REVERSE BIAS (HTRB)
Test circuit
Conditions
Bias:
Vce = As required
Tmax
2000 Hours nominal
Temperature:
Duration:
DUT
Test points:
168, 500, 1000,
1500, 2000, Hours nominal
DC
BIAS
D
D = Diode for CoPack devices only
Purpose
High temperature reverse bias (HTRB) burn-in is to stress the devices with the
applied voltage in the blocking mode while elevating the junction temperature. This
will accelerate any blocking voltage degradation process.
Failure Modes
The primary failure mode for HTRB stress is a gradual degradation of the breakdown
characteristics or V(BR)CES. This degradation has been attributed to the presence of
foreign materials and polar/ionic contaminants. These materials, migrating under
application of electric field at high temperature, can perturb the electric field
termination structure.
Extreme care must be exercised in the course of a long term test to avoid potential
hazards such as electrostatic discharge or electrical overstress to the gate during
test. Failures arising from this abuse can be virtually indistinguishable from true
HTRB failures which results from the actual stress test.
Sensitive Parameters
V(BR)CES, ICES, IGES, VGE(th)
IGBT / CoPack
Quarterly Reliability Report
Page 24 of 35
HIGH TEMPERATURE GATE BIAS (HTGB)
Test circuit
Conditions
DUT
Vge = As required
Bias:
Temperature:
Duration:
Test points:
Tmax
2000 Hours nominal
168, 500, 1000,
DC
1500, 2000 Hours nominal.
BIAS
D
D = Diode for CoPack devices only
Purpose
The purpose of High Temperature Gate Bias is to stress the devices with the
applied bias to the gate while at elevated junction temperature to accelerate time
dependent dielectric breakdown of the gate structure.
Failure Modes
The primary failure modes for long term gate stress is a rupture of the gate oxide,
causing either a resistive short between gate-to-emitter or gate-to-collector or what
appears to be a low breakdown diode between the gate and source.
The oxide breakdown has been attributed to the degradation in time of existing
defects in the thermally grown oxide. These defects can take form of localized
thickness variations, structural anomalies or the presence of sub-micron
particulate, within the oxide.
As with HTRB, extreme care must be exercised in the course of a long term test to
avoid potential hazards such as electrostatic discharge or electrical overstress to
the gate during test. Failures arising from this abuse are virtually indistinguishable
from true oxide breakdown which result from the actual stress test.
Sensitive Parameters
ICES,VGE(th)
IGBT / CoPack
Quarterly Reliability Report
Page 25 of 35
TEMPERATURE & HUMIDITY (THB)
Test circuit
Conditions
Bias:
Vce = 100% of maximum rated
V(BR)CES up to 500V: 500V for
all devices with rated V(BR)CES
DUT
greater than 500V *
85°C
DC
BIAS
Temperature:
D
Relative Humidity: 85%
Duration:
2000 Hours nominal
Test points:
168, 500, 1000,
1500, 2000 Hours nominal.
* Devices manufactured since week
code 9640 the applied bias: V(BR)CES
Vmax or 100v which ever the lesser
=
D = Diode for CoPack devices only
Purpose
Temperature and Humidity bias testing for non-hermetic packages is to subject the
devices to extremes of temperature and humidity to examine the ability of the
package to withstand the deleterious effect of the humid environment.
Failure Modes
There are two primary failure modes which have been observed. The first failure
mode comes about as a result of the ingression of water molecules into the active
area on the surface of the die. Once sufficient water has accumulated in the region
of the electric field termination structure on the die, the perturbation of that field
begins to degrade the breakdown characteristics of the device.
The second failure mode that has been observed is due to cathodic corrosion of the
aluminum emitter bonding pad. As with first failure mode, water will ingress to the top
of the die. There, in the presence of applied bias, an electric current through the few
monolayers of water will begin to cause the bond pad to dissolve. Eventually. the
corrosion will proceed to the point where the current capability of the device is
increased and become unstable.
The dominance of either of these failure modes is basically determined by the
amount of bias present during test. Under low bias conditions, the corrosion
proceeds slowly, so the first failure mode will proceed very rapidly and the device will
fail due to on-resistance before the breakdown characteristics can degrade.
Sensitive Parameters
V(BR)CES,VCE(on)
TEMPERATURE CYCLING (T/C) Unbiased
Conditions
Temperature:
Tmin = - 55°C
Tmax = + 150°C
Unbiased
Bias:
Duration:
Test points:
2000 Cycles
250,500,1000,1500,2000 Nominal
Purpose
Temperature Cycling simulates the extremes of thermal stresses which devices will
encounter in the actual circuit applications in combination with potentially extreme
operating ambient temperatures. Some equipment is destined to be used in extreme
environments, and subject to daily temperature cycles.
Failure Modes
The primary failure mode for temperature cycling is a thermal fatigue of the silicon / metal
interfaces and metal / metal interfaces. The fatigue results from thermomechanical
stresses due to heating and cooling and will cause electrical or thermal performance to
degrade.
If the degradation occurs at the header / die interface, then the thermal impedance, Rq
JC
will begin to increase well before any electrical effect is seen.
If the degradation occurs at the wire bond / die interface or the wire bond / bond post
interface, then on resistance, VCE(on), will slowly increase or become unstable with time.
The thermal impedance, when measured during this time, may appear to decrease or
change erratically.
The mechanical stresses from the temperature can also propagate fractures in the silicon
when the die is thermally mismatched to the solder / heat sink system. These fractures
will manifest themselves in the form of shorted gates or degraded breakdown
characteristics (V(BR)CES
)
Sensitive Parameters
ICES,V(BR)CES, RqJC,VCE(on)
IGBT / CoPack
Quarterly Reliability Report
Page 27 of 35
POWER CYCLING (P/C) Unbiased
Test circuit
Conditions
Bias
Set to give D T = 100°C
Temperature
Duration
Test points
Tj = D 100°C
10000 Cycles
2500, 5000, 7500, 10000 Nominal
D
DC
BIAS
Input
Bias
D = Diode for CoPack devices only
Purpose
The purpose of Power Cycling is to simulate the thermal and current pulsing
stresses which devices will encounter in actual circuit applications when either the
equipment is turned on and off or power is applied to the device in short bursts
interspersed with quiescent, low power periods. The simulation is achieved by the
on/off application of power to each device while they are in the active linear
region.
Failure Modes
The primary failure mode for power cycling is a thermal fatigue of the
silicon/metal interfaces and metal/metal interfaces. The fatigue, due to the
thermomechanical stresses from the heating and cooling, will cause electrical or
thermal performance or degrade.
If the degradation occurs at the header/die interface, then the thermal impedance
RqJC, will begin to increase well before any electrical effect is seen. If the
degradation occurs at the wire bond/die interface or the wire bond/post interface,
then on resistance, VCE(on), will slowly increase or become unstable with time.
The thermal impedance, when measured during this time may appear to
decrease or change erratically.
The mechanical stresses from the application of power can also propagate
fractures in the silicon when the die is thermally mismatched to the solder/heat
sink system. These fractures will manifest themselves in the form of shorted
gates or degraded breakdown characteristics (V(BR)CES).
Sensitive Parameters
ICES, V(BR)CES,RqJC, VCE(on)
IGBT / CoPack
Quarterly Reliability Report
Page 28 of 35
ACCELERATEDMOISTURE RESISTANCE (A/C)Unbiased
Conditions
Temperature:
Pressure:
Bias:
121°C
15Ibs psig
None
Duration:
Test points:
96 Hours nominal
96 Hours
Purpose
Accelerated Moisture Resistance test is performed to evaluate the moisture resistance
of non-hermetic packages. Severe conditions of pressure, humidity and temperature
are applied that accelerate the penetration of moisture through the interface of the
encapsulant and the conductors that pass through it.
Failure Modes
There are two failure modes which have been observed. The first mode, degradation
of the breakdown characteristics of the devices, can occur.
The second failure mode that has been observed is due to cathodic corrosion of
aluminum emitter bonding pad. Water will ingress to the top of the die. It is possible
for contaminants to work their way into the active area of the device while under
pressure in the presence of water. For that reason, the devices and test board are
cleaned prior to use. Then, throughout the course of the testing, the parts and the test
boards are never brought into contact with human contaminant.
Sensitive Parameters
V(BR)CES, VCE(on)
IGBT / CoPack
Quarterly Reliability Report
Page 29 of 35
Section
5
Device Package and Frequency Listings
IGBT / CoPack
Quarterly Reliability Report
Page 30 of 35
T0247 Generation III Package
Part Number
Channel Voltage
Speed
Hex Size
Frequency Family
IRGPC30S
IRGPC40S
IRGPC50S
IRGPH20S
IRGPH30S
IRGPH40S
IRGPH50S
N
N
N
N
N
N
N
600
600
600
1200
1200
1200
1200
Standard
Standard
Standard
Standard
Standard
Standard
Standard
3
4
5
2
3
4
5
Low Frequency
Low Frequency
Low Frequency
Low Frequency
Low Frequency
Low Frequency
Low Frequency
IRGPC20F
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
900
900
Fast
2
2
2
3
3
3
3
4
4
4
4
5
5
5
5
2
3
4
5
2
3
4
4
4
4
5
5
5
5
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
IRGPC20M
IRGPC20MD2
IRGPC30F
IRGPC30M
IRGPC30FD2
IRGPC30MD2
IRGPC40F
IRGPC40M
IRGPC40FD2
IRGPC40MD2
IRGPC50F
IRGPC50M
IRGPC50FD2
IRGPC50MD2
IRGPF20F
Short Circuit Rated Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Fast
Fast
Fast
IRGPF30F
IRGPF40F
IRGPF50F
900
900
IRGPH20M
IRGPH30MD2
IRGPH40F
IRGPH40M
IRGPH40FD2
IRGPH40MD2
IRGPH50F
IRGPH50M
IRGPH50FD2
IRGPH50MD2
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
Short Circuit Rated Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
IGBT / CoPack
Quarterly Reliability Report
Page 32 of 35
IRGP420U
IRGP430U
IRGP440U
IRGP440UD2
IRGP450U
IRGP450UD2
IRGPC20K
IRGPC20U
IRGPC20KD2
IRGPC30K
IRGPC30U
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
1200
1200
Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
2
3
4
4
5
5
2
2
2
3
3
3
3
4
4
4
4
5
5
5
5
5
5
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Short Circuit Rated Ultra-Fast
IRGPC30KD2
IRGPC30UD2
IRGPC40K
IRGPC40U
IRGPC40KD2
IRGPC40UD2
IRGPC50K
IRGPC50U
IRGPC50KD2
IRGPC50UD2
IRGPH50K
IRGPH50KD2
IGBT / CoPack
Quarterly Reliability Report
Page 32 of 35
T0247 Generation IV Package
Part Number
Channel Voltage
Speed
Hex Size
Frequency Family
IRG4P254S
IRG4PC30S
IRG4PC40S
IRG4PC50S
N
N
N
N
250
600
600
600
Standard
Standard
Standard
Standard
5
3
4
5
Low Frequency
Low Frequency
Low Frequency
Low Frequency
IRG4PC30F
IRG4PC30FD
IRG4PC40F
IRG4PC40FD
IRG4PC50F
IRG4PC50FD
N
N
N
N
N
N
600
600
600
600
600
600
Fast
Fast
Fast
Fast
Fast
Fast
3
3
4
4
5
5
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
IRG4PC30U
IRG4PC30UD
IRG4PC30K
IRG4PC40U
IRG4PC40UD
IRG4PC40K
IRG4PC40KD
IRG4PC50U
IRG4PC50UD
IRG4PH50U
IRG4PH50UD
N
N
N
N
N
N
N
N
N
N
N
600
600
600
600
600
600
600
600
600
1200
1200
Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
3
3
3
4
4
4
4
5
5
5
5
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
Ultra-Fast
Short Circuit Rated Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
IGBT / CoPack
Quarterly Reliability Report
Page 33 of 35
T0220 Generation III Package
Part Number Channel Voltage
Speed
Hex Size
Frequency Family
IRGBC20S
IRGBC30S
IRGBC40S
N
N
N
600
600
600
Standard
Standard
Standard
2
3
4
Low Frequency
Low Frequency
Low Frequency
IRGBC20F
N
N
N
N
N
N
N
N
N
N
N
N
600
600
600
600
600
600
600
600
600
600
900
900
Fast
2
2
2
2
3
3
3
3
4
4
2
3
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
IRGBC20M
IRGBC20FD2
IRGBC20MD2
IRGBC30F
IRGBC30M
IRGBC30FD2
IRGBC30MD2
IRGBC40F
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
Short Circuit Rated Fast
Fast
IRGBC40M
IRGBF20F
IRGBF30F
Short Circuit Rated Fast
Fast
Fast
IRGB420U
IRGB420UD2
IRGB430U
IRGB430UD2
IRGB440U
IRGBC20K
IRGBC20U
IRGBC20KD2
IRGBC20UD2
IRGBC30K
IRGBC30U
IRGBC30KD2
IRGBC30UD2
IRGBC40K
IRGBC40U
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
Ultra-Fast
2
2
3
3
4
2
2
2
2
3
3
3
3
4
4
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
IGBT / CoPack
Quarterly Reliability Report
Page 34 of 35
T0220 Generation IV Package
Part Number Channel Voltage
Speed
Hex Size
Frequency Family
IRG4BC20S
IRG4BC30S
IRG4BC40S
N
N
N
600
600
600
Standard
Standard
Standard
2
3
4
Low Frequency
Low Frequency
Low Frequency
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
N
N
N
N
N
600
600
600
600
600
Fast
Fast
Fast
Fast
Fast
2
2
3
3
4
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
Mid Frequency
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
IRG4BC30K
IRG4BC40U
IRG4BC40K
N
N
N
N
N
N
N
600
600
600
600
600
600
600
Ultra-Fast
Ultra-Fast
Ultra-Fast
2
2
3
3
3
4
4
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
High Frequency
Ultra-Fast
Short Circuit Rated Ultra-Fast
Ultra-Fast
Short Circuit Rated Ultra-Fast
IGBT / CoPack
Quarterly Reliability Report
Page 35 of 35
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