IRGPC30K-E [INFINEON]
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRGPC30K-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 电动机控制 栅 晶体管 |
| 文件： | 总8页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1075
IRGPC30K
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
Features
C
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
VCES = 600V
5kHz)
See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 3.8V
G
@VGE = 15V, IC = 14A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
T
O -247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
23
IC @ TC = 100°C
14
A
ICM
46
ILM
46
tsc
10
±20
µs
V
VGE
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
10
mJ
W
PD @ TC = 25°C
100
PD @ TC = 100°C Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
1.2
—
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
IRGPC30K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 20
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
—
—
—
—
3.0
—
0.30
V/°C VGE = 0V, IC = 1.0mA
IC = 14A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.5 3.8
VGE = 15V
3.3
2.5
—
—
—
V
IC = 23A
See Fig. 2, 5
IC = 14A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
3.3 6.5
—
S
VCE = 100V, IC = 14A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
600 µA
1100
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
39
8.7
15
31
23
58
13
23
—
—
IC = 14A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
See Fig. 8
TJ = 25°C
ns
IC = 14A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
100 150
84 130
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.3
0.3
—
—
mJ
µs
See Fig. 9, 10, 11, 14
0.6 0.9
—
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 23Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
30
23
—
—
—
—
—
—
—
—
—
ns
IC = 14A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
170
170
1.4
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
LE
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
740
92
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
9.4
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
ꢀ Pulse width 5.0µs,
Repetitive rating; pulse width limited
single shot.
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
IRGPC30K
40
30
20
10
0
For both:
Triangular wave:
Duty cycle: 50%
T = 125°C
J
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 24W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
10
1
100
T = 25°C
J
T = 150°C
J
T = 150°C
J
10
T = 25°C
J
V
= 15V
V
= 100V
GE
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
A
A
0.1
1
0.1
1
10
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC30K
25
20
15
10
5
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
GE
= 15V
V
= 15V
GE
80µs PULSE WIDTH
I
= 28A
C
I
I
= 14A
= 7.0A
C
C
A
A
0
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
t
0.02
2
SINGLE PULSE
0.01
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRGPC30K
20
16
12
8
1400
1200
1000
800
600
400
200
0
V
C
C
C
= 0V,
f = 1MHz
VCE = 400V
IC = 14A
GE
ies
= C + C , C SHORTED
ge
gc
gc
ce
= C
res
oes
= C + C
ce
gc
C
ies
C
oes
4
C
res
A
A
0
1
10
100
0
10
20
30
40
V , Collector-to-Emitter Voltage (V)
CE
Q , Total Gate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.80
0.76
0.72
0.68
0.64
0.60
Ω
= 15V
= 480V
V
= 480V
= 15V
= 25°C
R
V
V
= 23
CC
G
V
GE
GE
CC
T
I
C
C
= 14A
I
= 28A
C
C
C
I
I
= 14A
= 7.0A
1
A
A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
T , Case Temperature (°C)
C
Ω
, Gate Resistance ( )
R
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
IRGPC30K
4.0
100
10
1
Ω
= 23
R
T
V
V
V
GE
= 20V
G
= 150°C
= 480V
= 15V
T
= 125°C
C
J
CC
GE
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
A
A
0
10
20
30
1
10
100
1000
I , Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
NOTES:
- D -
3.65 (.143)
1
DIMENSIONS & TOLERANCING
5.30 (.209)
4.70 (.185)
15.90 (.626)
3.55 (.140)
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
CONFORM S TO JEDEC OUTLINE
TO-247AC.
15.30 (.602)
M
0.25 (.010)
5.50 (.217)
D
M
B
2
3
2.50 (.089)
1.50 (.059)
4
- B -
- A -
4
20.30 (.800)
19.70 (.775)
5.50 (.217)
4.50 (.177)
2X
LEAD ASSIGNMENTS
1 - GATE
1
2 - COLLECTOR
3 - EMITTER
2
3
4 - COLLECTOR
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
*
LONGER LEADED (20m m)
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
*
2.40 (.094)
0.80 (.031)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3X
0.40 (.016)
2.00 (.079)
2X
5.45 (.215)
M
S
2.60 (.102)
2.20 (.087)
A
C
3.40 (.133)
3.00 (.118)
2X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
IRGPC30K
L
D.U.T.
480V
RL =
V *
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching Loss
Driver*
V
Test Circuit
C
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
Fig. 14b - Switching Loss
Waveforms
V
C
90%
t
d(off)
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
on
E
off
E = (E +E )
off
ts
on
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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