IRGP4262D-EPBF [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | IRGP4262D-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总12页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4262DPbF
IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 40A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 24A
G
IRGP4262D-EPbF
TO-247AD
E
V
IRGP4262DPbF
TO-247AC
n-channel
Applications
• Industrial Motor Drive
• UPS
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4262DPBF
IRGP4262D-EPBF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4262DPBF
IRGP4262D-EPBF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
650
60
40
96
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
ILM
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
96
45
27
±20
250
125
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
V
W
Maximum Power Dissipation
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.6
1.6
–––
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
650
—
—
0.86
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 2mA (25°C-175°C)
—
—
5.5
1.7
2.1
—
2.1
—
7.7
V
IC = 24A, VGE = 15V, TJ = 25°C
IC = 24A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 700µA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-20
—
mV/°C VCE = VGE, IC = 700µA (25°C-150°C)
CE = 50V, IC = 24A, PW = 20µs
µA VGE = 0V, VCE = 650V
VGE = 0V, VCE = 650V, TJ = 175°C
nA VGE = ±20V
VGE(th)/TJ
gfe
—
—
—
—
—
—
16
1.0
530
—
1.6
1.26
—
35
—
±100
2.4
—
S
V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
V
IF = 24A
IF = 24A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
47
15
20
520
240
760
24
27
73
23
1120
70
23
30
740
350
1090
40
45
90
40
—
IC = 24A
VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
µJ
IC = 24A, VCC = 400V, VGE=15V
RG = 10, L = 0.40µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
µJ
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
475
1595
22
—
—
—
—
—
IC = 24A, VCC = 400V, VGE=15V
RG = 10, L = 0.40µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
28
ns
td(off)
Turn-Off delay time
88
tf
Fall time
—
—
—
—
74
1550
124
43
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 96A
VCC = 480V, Vp ≤ 650V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
292
170
17
—
—
—
µJ
ns
A
VCC = 400V, IF = 24A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
60
50
40
30
20
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 108.7W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
60
50
40
30
20
10
0
250
200
150
100
50
0
25
50
75
100
125
150
175
25
50
75
100
(°C)
125
150
175
T
(°C)
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10µsec
10
100µsec
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
100
80
60
40
20
0
100
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
80
60
40
20
0
V
GE
V
GE
V
GE
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
GE
GE
V
GE
V
GE
V
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
100
80
60
40
20
0
100
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
80
60
40
20
0
-40°C
25°C
175°C
0
2
4
6
8
10
0
1
2
3
V
(V)
V (V)
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
12
10
12
10
8
I
= 12A
= 24A
= 48A
I
= 12A
= 24A
= 48A
CE
CE
I
I
8
6
4
2
0
CE
CE
I
I
CE
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
12
10
8
100
80
60
40
I
= 12A
= 24A
= 48A
CE
I
CE
I
CE
6
4
T = 25°C
J
T = 175°C
20
0
J
2
0
5
10
15
20
4
6
8
10
(V)
12
14
V
(V)
V
GE
GE
Fig. 13 - Typ. Transfer Characteristics
CE = 50V; tp = 20µs
Fig. 12 - Typical VCE vs. VGE
V
TJ = 175°C
3000
2500
2000
1500
1000
500
1000
100
10
td
F
OFF
t
E
td
ON
ON
t
R
E
OFF
0
1
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
I
(A)
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 0.40mH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 0.40mH; VCE = 400V, RG = 10; VGE = 15V
2400
1000
2000
E
ON
1600
1200
800
400
0
td
OFF
100
E
t
OFF
F
t
R
td
ON
10
0
20
40
60
80
100
0
20
40
60
80
100
R
( )
G
Rg ( )
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V
5
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June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
17
16
15
14
13
12
11
10
17
16
15
14
13
12
11
10
10
R
G =
22
R
G =
47
R
G =
R
100
G =
0
20
40
60
(
80
100
10 15 20 25 30 35 40 45 50
(A)
I
R
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
17
16
15
14
13
12
11
10
2.5
2.0
1.5
1.0
48A
10
22
47
24A
100
12A
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
V
V
21
18
15
12
9
140
120
100
80
400
300
200
100
0
I
T
sc
sc
= 10
R
G
= 22
R
G
60
R
R
= 47
G
= 100
10
6
40
G
3
20
8
10
12
14
(V)
16
18
0
20
30
40
50
V
I
(A)
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
10000
1000
100
16
V
V
= 400V
= 300V
14
12
10
8
CES
CES
Cies
6
Coes
Cres
4
2
0
10
0
10
Q
20
30
40
50
0
100
200
300
(V)
400
500
600
, Total Gate Charge (nC)
V
G
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 24A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.20
0.1
Ri (°C/W)
0.014255
0.163283
0.257883
0.164579
i (sec)
0.000015
0.000127
0.003125
0.019104
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
1 1
2 2
3 3
4 4
0.02
Ci= iRi
Ci= iRi
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000026
0.000561
0.005131
0.039505
R1
R1
R2
R2
R3
R3
R4
R4
0.10
0.05
0.026766
0.573978
0.655762
0.344981
0.1
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
Ci= iRi
Ci= iRi
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
www.irf.com © 2013 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
8
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
600
500
400
300
200
100
0
60
50
40
30
20
10
0
600
500
400
300
200
100
0
60
50
40
30
20
10
0
tr
tf
TEST
CURRENT
90% ICE
90% ICE
10% VCE
10% ICE
10%ICE
10% VCE
Eoff Loss
Eon Loss
0.5
-100
-10
-100
-10
-0.3
-0.05
0.2
time(µs)
0.45
0.7
-0.5
0
1
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
150
40
ICE
QRR
500
400
300
200
100
0
125
100
75
30
20
VCE
tRR
10
50
0
Peak
IRR
25
-10
-20
-30
0
-100
-25
10.0
-5.0
0.0
5.0
time (µs)
-0.15
0.00
0.15
time (µs)
0.30
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
IRFPE30
135H
57
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
"A"
E2/2
A2
Q
E2
2X
D
B
L1
"A"
L
SEE
VIEW "B"
2x b2
3x b
Ø .010
B A
c
b4
A1
e
2x
LEAD TIP
Ø P
Ø .010 B A
-A-
S
D1
VIEW: "B"
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø .010
B A
VIEW: "A" - "A"
(b, b2, b4)
SECTION: C-C, D-D, E-E
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
June 12, 2013
IRGP4262DPbF/IRGP4262D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
N/A
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
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© 2013 International Rectifier
June 12, 2013
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