IRG4BC40SPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT; 绝缘栅双极晶体管标准速度IGBT
| 型号： | IRG4BC40SPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT |
| 文件： | 总8页 (文件大小：582K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95175
IRG4BC40SPbF
Standard Speed IGBT
INSULATEDGATEBIPOLARTRANSISTOR
C
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCES =600V
V
CE(on) typ. = 1.32V
G
• Industry standard TO-220AB package
• Lead-Free
@VGE = 15V, IC = 31A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
60
IC @ TC = 100°C
31
120
A
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
120
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
mJ
PD @ TC = 25°C
160
W
°C
PD @ TC = 100°C
Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.77
–––
80
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
–––
2.0 (0.07)
–––
g (oz)
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1
04/23/04
IRG4BC40SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
12
—
—
—
—
0.75
V/°C VGE = 0V, IC = 1.0mA
IC = 31A
1.32 1.5
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.68
1.32
—
—
—
IC = 60A
V
See Fig.2, 5
IC = 31A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.3
21
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 31A
—
250
2.0
1000
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 150
Conditions
IC = 31A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
14
34
22
18
21
51
—
—
nC
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
FallTime
650 980
380 570
IC = 31A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.45
6.5
—
—
mJ
ns
6.95 9.9
23
21
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 31A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
FallTime
1000
940
12
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 13, 14
7.5
nH
Measured 5mm from package
Cies
Coes
Cres
2200
140
26
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40SPbF
70
60
50
40
30
20
10
0
F or both :
Trian gu lar w a ve :
D uty cycle: 50%
TJ = 125°C
I
T
=
90°C
G ate drive as specified
Po w er D issip ation 28 W
sink
C lam p voltage:
80 % o f ra ted
=
Sq u are wave:
60 % of rated
voltag e
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
100
TJ = 150°C
TJ = 25°C
TJ = 25°C
10
TJ = 150°C
V C C = 50V
5µs PULSE WIDTH
V G E = 15V
20µs PULSE WIDTH
A
A
1
1
5
6
7
8
9
10
0.1
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC40SPbF
60
50
40
30
20
10
0
2.0
1.5
1.0
V G E = 15V
V G E = 1 5 V
80 µ s P U LS E W ID TH
I C = 6 2A
I C = 3 1A
I
= 1 6 A
C
A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
T
, Ju nction Tem perature (°C )
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC40SPbF
4000
3000
2000
1000
0
20
16
12
8
V
C
C
C
= 0V ,
f = 1MHz
VCE = 400V
IC = 31A
G E
ies
res
oes
= C
+ C
+ C
,
C
SHORTED
ge
gc
ce
= C
= C
gc
ce
gc
C
ies
C
C
oes
res
4
A
A
0
1
10
100
0
20
40
60
80
100
120
V
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
7.8
7.7
7.6
7.5
7.4
7.3
100
10
1
VCC = 480V
VGE = 15V
T J = 25°C
I C = 31A
RG = 10
Ω
V GE = 15V
V CC = 480V
I C = 62A
I C = 31A
IC = 16A
A
A
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Junction Temperature (°C)
Ω
, Gate Resistance ( )
R
G
J
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4BC40SPbF
30
1000
100
10
Ω
V
T
= 20V
G E
RG = 10
= 125°C
T J = 150°C
VC C = 480V
V G E = 15V
J
20
10
0
SAFE OPE RA TING A RE A
A
1
1
10
100
1000
0
10
20
30
40
50
60
70
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC40SPbF
L
D .U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4BC40SPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTE S:
1
2
D IM EN SIO NING
&
TO LE R ANC IN G P ER AN SI Y14.5M, 1982.
3
4
O UTLINE C ON FOR M S TO JEDE C O UTLINE TO -220AB .
HEA TSIN K & LEAD MEASU RE MENTS D O NO T IN CLU D E BU RR S.
C ON TROLLIN G D IMEN SION : INCH
TO-220AB Part Marking Information
E XAMP L E : T H IS IS AN IR F 1 010
L OT COD E 1789
P AR T N U MB E R
AS S E MB L E D O N WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
IN T E R NAT ION AL
R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free"
D AT E CODE
YE AR 7 = 1997
WE E K 19
AS S E MB L Y
L OT COD E
L IN E C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
8
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