IRG4BC40WPBF [INFINEON]
ISSULATED GATE BIPOLAR TRANSISTOR; ISSULATED栅双极晶体管型号: | IRG4BC40WPBF |
厂家: | Infineon |
描述: | ISSULATED GATE BIPOLAR TRANSISTOR |
文件: | 总9页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95429
IRG4BC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
C
VCES = 600V
VCE(on) typ. = 2.05V
G
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Lead-Free
@VGE = 15V, IC = 20A
E
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
40
IC @ TC = 100°C
20
A
ICM
160
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
160
VGE
± 20
160
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
160
W
°C
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.77
80
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.5
2.0 (0.07)
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06/17/04
IRG4BC40WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
V
V
Emitter-to-Collector Breakdown Voltage 18
3.0
18
0.44
V/°C VGE = 0V, IC = 1.0mA
IC = 20A
2.05 2.5
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.36
1.90
IC = 40A
V
See Fig.2, 5
IC = 20A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
13
28
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
S
VCE = 100 V, IC =20A
GE = 0V, VCE = 600V
250
2.0
2500
±100
V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
98 147
12 18
Charge
IC =20A
nC
ns
VCC = 400V
(tuGrnE-o=n1)5V
See Fig.8
36 54V
Gate
-
Collector
Turn-On Delay Time
Rise Time
27
22
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
100 150
74110
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Fall
Time
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.11
0.23
Energy losses include "tail"
See Fig. 9,10, 14
mJ
ns
0.340.54
25
23
TJ = 150°C,
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10,11, 14
td(off)
tf
Turn-Off Delay Time
170
Fall
Time
124
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
0.85
7.5
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
1900
140
35
Output Capacitance
pF
VCC = 30V
= 1.0MHz
See Fig. 7
Reverse Transfer Capacitance
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40WPbF
50
40
30
20
10
0
For both:
Duty cycle: 50%
= 125°C
Triangular wave:
T
J
T
= 90°C
sink
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
°
T = 25 C
J
100
10
1
°
T = 150 C
°
J
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
GE
V
= 50V
CC
80µs PULSE WIDTH
5µs PULSE WIDTH
1
1.0
2.0
3.0
4.0 5.0
5
7
9 11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC40WPbF
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
V
= 15V
GE
80 us PULSE WIDTH
I = 40A
C
I = 20A
C
I = 10A
C
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC40WPbF
20
16
12
8
4000
3000
2000
1000
0
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 20A
GE
C
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
oes
4
res
0
1
10
100
0
20
40
60
80
100
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
V
V
T
= 480V
R
= 110Ω
= 15V
= 480V
CC
GE
J
G
= 15V
= 25
V
GE
°
C
V
CC
I
= 20A
C
I
=
A
40
C
1
I
I
=
=
A
A
20
10
C
C
0.1
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
(Ω)
, Gate Resistance
R
G
°
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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IRG4BC40WPbF
1000
100
10
2.0
10Ω
V
T
= 20V
R
T
=
G
J
GE
J
= 125 oC
°
= 150 C
V
= 480V
= 15V
CC
V
GE
1.5
1.0
0.5
0.0
SAFE OPERATING AREA
10
5
15
25
35
45
1
100
1000
I
, Collector-to-emitter Current (A)
C
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC40WPbF
L
D.U.T.
480V
RL =
V *
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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IRG4BC40WPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMP LE: THIS IS AN IRF1010
LO T CODE 1789
PART NUMBER
ASSEMBLED O N WW 19, 1997
IN THE ASS EMBLY LINE "C"
INTERNATIONAL
RECT IFIER
LO GO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE C ODE
YEAR 7 = 1997
WEE K 19
AS S E MB LY
LOT C ODE
LINE C
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
8
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Note: For the most current drawings please refer to the IR website at:
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