IRG4BC40UPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT; 绝缘栅双极晶体管速度超快IGBT
| 型号： | IRG4BC40UPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| 文件： | 总8页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95428
IRG4BC40UPbF
UltraFastSpeedIGBT
INSULATEDGATEBIPOLARTRANSISTOR
Features
C
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES=600V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
VCE(on) typ. = 1.72V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
40
20
IC @ TC = 100°C
A
ICM
160
ILM
160
VGE
±20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
mJ
PD @ TC = 25°C
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Min.
------
------
------
------
Typ.
------
Max.
0.77
------
80
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
0.50
------
2 (0.07)
------
g (oz)
www.irf.com
1
06/17/04
IRG4BC40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage 600 ---- ----
Emitter-to-Collector Breakdown Voltage 18 ---- ----
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
V
V
See Fig. 2, 5
VGE = 15V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.72 2.1
---- 2.15 ----
---- 1.7 ----
3.0 ---- 6.0
IC = 20A
IC = 40A
V
I
C = 20A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
11
18
----
S
VCE = 100V, IC = 20A
---- ---- 250
---- ---- 2.0
---- ---- 2500
VGE = 0V, VCE = 600V
ICES
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
---- 100 150
IC = 20A
----
----
----
----
16
40
34
19
25
60
nC VCC = 400V
VGE = 15V
See Fig. 8
----
----
TJ = 25°C
ns
IC = 20A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 110 175
---- 120 180
---- 0.32 ----
---- 0.35 ----
---- 0.67 1.0
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
----
----
30
19
----
----
TJ = 150°C,
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
FallTime
---- 220 ----
---- 160 ----
---- 1.4 ----
---- 7.5 ----
---- 2100 ----
---- 140 ----
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 13, 14
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
= 1.0MHz
See Fig. 7
----
34
----
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(see fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC40UPbF
60
50
40
30
20
10
0
For both:
Duty cycle: 50%
Triangular wave:
T
= 125°C
J
T
= 90°C
sink
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
10
VCC = 10V
5µs PULSE WIDTH
VGE = 15V
20µs PULSE WIDTH
A
1
A
1
4
6
8
10
12
0.1
1
10
V
, Gate-to-Emitter Voltage (V)
GE
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
TC = 25°C
www.irf.com
3
IRG4BC40UPbF
2.5
2.0
1.5
1.0
40
30
20
10
0
VGE = 15V
80µs PULSE WIDTH
VGE = 15V
IC = 40A
C
I
= 20A
= 10A
C
I
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
T , Junction Temperature (°C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
2
thJC
1
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
www.irf.com
IRG4BC40UPbF
20
16
12
8
4000
3000
2000
1000
0
VCE = 400V
IC = 20A
V
C
C
C
= 0V,
f = 1MHz
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
= C + C
ce
gc
C
C
ies
oes
C
res
4
A
0
A
0
20
40
60
80
100
120
1
10
100
Q , Total Gate Charge (nC)
g
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
1.1
10
VCC = 480V
VGE = 15V
TJ = 25°C
RG = 10
VGE = 15V
VCC = 480V
Ω
1.0 IC = 20A
IC = 40A
0.9
0.8
0.7
0.6
IC = 20A
IC = 10A
1
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60
80 100 120 140 160
R , Gate Resistance (
)
Ω
T , Junction Temperature (°C)
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
JunctionTemperature
Resistance
www.irf.com
5
IRG4BC40UPbF
4.0
1000
100
10
RG = 10
Ω
V = 20V
GE
TJ = 150°C
VCC = 480V
VGE = 15V
T
= 125°C
J
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
A
1
0
10
20
30
40
50
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
www.irf.com
IRG4BC40UPbF
L
D.U.T.
480V
4 X IC@25°C
RL
=
V *
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
www.irf.com
7
IRG4BC40UPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMP LE: THIS IS AN IRF1 010
LO T C O DE 1789
PART NUMBER
ASS EMBLED O N WW 19, 1997
IN THE ASS EMBLY LINE "C"
INT E RNAT IO NAL
RECTIFIER
LO G O
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CO DE
YEAR 7 = 1997
WE EK 19
AS S E MB L Y
LO T CO DE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
8
www.irf.com
相关型号：
IRG4BC40W
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
INFINEON
IRG4BC40WSPBF
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG4BC40WSTRLPBF
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明