IRG4BC20SD-STRR [INFINEON]
暂无描述;
| 型号： | IRG4BC20SD-STRR |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 栅 |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91602A
IRG4BC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.66V
G
@VGE = 15V, IC = 9.0A
E
• Industry standard TO-220AB package
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
16
IC @ TC = 100°C
9.0
A
ICM
64
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
64
VGE
20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
mJ
PD @ TC = 25°C
60
24
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.1
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.5
–––
80
–––
2.0 (0.07)
–––
www.irf.com
1
4/17/2000
IRG4BC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
2.9
—
—
—
—
0.72
V/°C VGE = 0V, IC = 1.0mA
1.66 2.0
IC = 9.0A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.06
1.76
—
—
—
IC = 16A
V
See Fig.2, 5
IC = 9.0A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
5.1
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
250
2.0
1000
100
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
nA VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
27 40
4.2 6.2
Conditions
IC = 9.0A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
9.9
24
17
15
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
190 280
210 320
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.07
0.60
—
—
mJ See Fig. 9, 10, 14
0.67 1.1
24
17
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 9.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
300
340
1.30
7.5
540
37
VGE = 15V, RG = 50Ω
Energy losses include "tail"
mJ See Fig. 11, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
7.0
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC20F
25
20
15
10
5
F or both:
T ria ngu lar w ave :
D uty cycle: 50%
I
T
T
=
sink
125°C
= 90°C
J
G ate drive as specifie d
Pow er D is sipa tion 13 W
=
C la mp voltage:
80% of rated
S q u a re w ave :
60% of rated
v oltage
I
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
T = 25oC
J
T = 150oC
T = 150oC
J
J
10
T = 25 oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
10
5
6
7
8
9
10 11 12 13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
www.irf.com
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20F
16
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 18A
C
12
8
9.0 A
= 9
I
I
C
C
4
= 4.5A
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
www.irf.com
IRG4BC20F
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C
GE
V
CC
I
C
= 400V
= 9.0A
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
ce
oes
C
ies
C
4
oes
C
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.72
10
V
V
T
J
= 480V
R
= 50Ω
= 15V
= 480V
CC
GE
G
= 15V
V
GE
°
= 25
C
V
CC
I
= 9.0A
0.71
0.70
0.68
0.67
0.66
C
I
I
=
=
A
18
C
9.0 A
C
1
I
C
=
A
4.5
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
T , Junction Temperature ( C )
R
G
, Gate Resistance (Ohm)
Ω
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
www.irf.com
5
IRG4BC20F
100
10
1
3.0
V
T
= 20V
R
T
= 50Ω
G
J
GE
J
°
= 125 oC
= 150 C
V
= 480V
= 15V
CC
2.5
2.0
1.5
1.0
0.5
0.0
V
GE
SAFE OPERATING AREA
10
1
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
www.irf.com
IRG4BC20F
L
D.U.T.
480V
RL =
V
*
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
www.irf.com
7
IRG4BC20F
Case Outline and Dimensions TO-220AB
10.54 (.415)
3.78 (.149)
N O TE S :
- B -
2.87 (.113)
2.62 (.103)
10.29 (.405)
1
D IM E N S IO N S & T O LER A N C IN G
4.69 (.185)
4.20 (.165)
3.54 (.139)
P E R A N S I Y14.5M , 1982.
C O N T R O LLIN G D IM E N SIO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM ET E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U TLIN E
TO -220A B .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1 - G A TE
1
2
3
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n sio n s in M illim e te rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
www.irf.com
相关型号：
IRG4BC20SDS
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
INFINEON
IRG4BC20U
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20UD-STRLPBF
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明