IRG4BC10SPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4BC10SPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94919A
IRG4BC10SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
VCES = 600V
VCE(on) typ. = 1.10V
G
Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
• Lead-Free
@VGE = 15V, IC = 2.0A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
8.0
ICM
18
A
ILM
18
± 20
VGE
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
110
mJ
PDTC = 25°C
38
PD @ TC = 100°C Maximum Power Dissipation
15
W
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
3.3
Units
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.5
50
°C/W
2.0(0.07)
g (oz)
1
www.irf.com
07/04/07
IRG4BC10SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
0.64
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
1.58 1.8
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.05
1.68
—
—
—
IC = 14A
See Fig.2, 5
V
IC = 8.0A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.5
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
3.7 5.5
—
S
VCE = 100V, IC = 8.0A
VGE = 0V, VCE = 600V
—
—
—
—
—
—
—
—
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
15 22
Conditions
IC = 8.0A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
2.4 3.6
6.5 9.8
nC
VCC = 400V
VGE = 15V
See Fig. 8
25
28
—
—
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
630 950
710 1100
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.14
2.58
—
—
mJ See Fig. 9, 10, 14
2.72 4.3
24
31
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 8.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
810
1300
3.94
7.5
VGE = 15V, RG = 100Ω
Energy losses include "tail"
mJ See Fig. 11, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
280
30
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
4.0
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
ꢀ
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC10SPbF
20
16
12
8
For both:
Triangular wave:
Duty cycle: 50%
TJ= 125°C
T
= 90°C
sink
Gate drive as specified
Clamp voltage:
80%of rated
Power Dissipation = 9.2 W
Square wave:
60%of rated
voltage
4
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
6
8
10
12
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC10SPbF
3.00
2.50
2.00
1.50
1.00
16
V
= 15V
GE
80 us PULSE WIDTH
I
= 16A
C
12
8
I
I
=
=
8A
4A
C
C
4
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
J
°
T , Case Temperature ( C)
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SPbF
20
15
10
5
500
400
300
200
100
0
V
CC
I
C
= 400V
= 8A
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
0
1
10
100
0
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
2.8
100
10
1
V
V
T
= 480V
R
= Ohm
= 15V
= 480V
100Ω
CC
GE
J
G
= 15V
= 25
V
GE
°
C
V
CC
I
= 8.0A
C
I
C
=
16A
I
I
=
=
8A
4A
C
2.7
C
2.6
0.1
0
20
40
60
80
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R , Gate Resistance ( Ω )
T , Junction Temperature ( C )
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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5
IRG4BC10SPbF
100
10
1
12
V
T
= 20V
R
T
= 100Ω
GE
J
G
J
= 125 oC
°
= 150 C
V
= 480V
= 15V
CC
10
8
V
GE
6
4
2
SAFE OPERATING AREA
10
0
1
100
1000
0
4
8
12
16
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
6
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IRG4BC10SPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Current Test Circuit
Load Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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7
IRG4BC10SPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
8
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