IRFZ24NS [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.07ohm ，ID = 17A）
| 型号： | IRFZ24NS |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) |
| 文件： | 总10页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ24NS)
l Low-profilethrough-hole(IRFZ24NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.07Ω
G
l Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-holeversion(IRFZ24NL)isavailableforlow-
profileapplications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
17
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
12
A
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
45
W
W
Power Dissipation
Linear Derating Factor
0.30
± 20
71
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
10
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
4.5
6.8
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
Max.
3.3
40
Units
RθJC
RθJA
°C/W
–––
9/22/97
IRFZ24NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID =1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.07
Ω
V
S
VGS =10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0 ––– 4.0
4.5 ––– –––
Forward Transconductance
––– –––
25
IDSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 5.3
––– ––– 7.6
––– 4.9 –––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
RiseTime
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 28V
–––
–––
–––
34 –––
19 –––
27 –––
ID = 10A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 24Ω
RD = 2.6Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
Ciss
Coss
Crss
Input Capacitance
––– 370 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
65 –––
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
17
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
68
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 56 83
––– 120 180
V
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IF = 10A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 280µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ24N data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFZ24NS/L
1 0 0
1 0
1
1 0 0
1 0
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs P ULSE WIDTH
T = 175°C
J
C
=
T = 25°C
T
= 25°C
CJ
A
1 0 0
A
0.1
1
1 0
0.1
1
1 0
1 0 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0
1 0
1
3. 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 17A
D
T
J
= 25°C
T
= 175°C
J
V
= 25V
DS
20µs P ULSE W ID TH
V
= 10V
GS
1 0 A
A
4
5
6
7
8
9
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
VG S , Ga te-to-So urce Voltage (V )
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
IRFZ24NS/L
7 0 0
2 0
1 6
1 2
8
V
C
C
C
= 0V,
f = 1M Hz
I
= 10A
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
d s
gd
V
V
= 44V
= 28V
DS
DS
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0
rss
oss
gd
C
C
iss
o ss
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
1
1 0
1 0 0
0
4
8
1 2
1 6
2 0
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0 0
1 0 0
1 0
1 0 0
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
J
T
= 25°C
J
10µs
1 0
100µs
1m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
10m s
V
= 0V
GS
1
1
A
A
1
1 0
1 0 0
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
2. 0
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
IRFZ24NS/L
RD
VDS
20
16
12
8
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width≤ 1µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
4
0
25
50
75
100
125
150
175
10%
°
T , Case Temperature ( C)
V
GS
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
P
SINGLE PULSE
(THERMAL RESPONSE)
DM
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRFZ24NS/L
1 4 0
1 2 0
1 0 0
8 0
I
D
L
TOP
4.2A
7.2A
BOTTOM 10A
V
DS
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
6 0
4 0
Fig 12a. Unclamped Inductive Test Circuit
V
2 0
(BR)DSS
t
p
V
= 25V
5 0
D D
0
A
1 7 5
2 5
7 5
1 0 0
1 2 5
1 5 0
V
DD
Starting TJ , Junction Temperature (°C)
V
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. DrainCurrent
Fig 12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFZ24NS/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14.ForN-ChannelHEXFETS
IRFZ24NS/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
NOTES:
LEAD ASSIGNM ENTS
1 - GATE
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOU RC E
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMEN SION S DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
LOT CODE
YY = YEAR
W W = W EEK
IRFZ24NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRFZ24NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
F EED D IR EC TIO N
1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE ED D IR EC TION
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
3 0.4 0 (1 .19 7)
M A X .
N O T ES
:
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D
4. IN C LU D E S F L AN G E D IS T O R T IO N
26 .40 (1. 03 9)
24 .40 (.9 61 )
4
@ H U B .
3
@
O U T E R ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97
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