IRFS7762PBF [INFINEON]
Brushed motor drive applications;型号: | IRFS7762PBF |
厂家: | Infineon |
描述: | Brushed motor drive applications |
文件: | 总12页 (文件大小:618K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
StrongIRFET™
IRFS7762PbF
IRFSL7762PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
75V
RDS(on) typ.
5.6m
6.7m
85A
max
ID
D
D
Benefits
S
S
D
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
IRFSL7762PbF
IRFS7762PbF
Package Type
TO-262
Orderable Part Number
Quantity
Tube
Tube
50
50
IRFSL7762PbF
IRFS7762PbF
D2-Pak
Tape and Reel Left
800
IRFS7762TRLPbF
18
16
14
12
10
8
100
80
60
40
20
0
I
= 51A
D
T
= 125°C
J
T
= 25°C
J
6
4
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFS/SL7762PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
85
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
60
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
335
140
PD @TC = 25°C
W
W/°C
V
0.95
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to + 175
300
°C
Avalanche Characteristics
Symbol
EAS (Thermally limited)
EAS (Thermally limited)
IAR
Max.
160
243
Units
Parameter
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
1.05
40
Units
Junction-to-Case
RJC
RJA
°C/W
Junction-to-Ambient (PCB Mount)
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75
––– –––
V
VGS = 0V, ID = 250µA
–––
–––
–––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
58
5.6
6.6
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
RDS(on)
6.7
–––
3.7
1.0
V
V
GS = 10V, ID = 51A
GS = 6.0V, ID = 26A
m
V
VGS(th)
IDSS
Gate Threshold Voltage
VDS = VGS, ID = 100µA
DS = 75V, VGS = 0V
VDS = 75V,VGS = 0V,TJ = 125°C
V
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
RG
nA
–––
2.5
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 735A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFS/SL7762PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
Total Gate Charge
180
–––
–––
–––
–––
–––
–––
–––
85
21
26
60
11
49
–––
130
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 51A
ID = 51A
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
VDS = 38V
nC
VGS = 10V
VDD = 38V
ID = 51A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
57
40
–––
–––
–––
–––
–––
RG= 2.7
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4440
370
230
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
330
430
–––
–––
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
D
IS
–––
–––
85
A
G
Pulsed Source Current
(Body Diode)
ISM
–––
–––
–––
–––
335
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 51A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
13
34
46
54
69
2.7
––– V/ns TJ = 175°C,IS = 51A,VDS = 75V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 64V
IF = 51A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
3
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IRFS/SL7762PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
I
= 51A
D
V
= 10V
GS
T = 175°C
J
T = 25°C
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0 20 40 60 80 100120140160180
V
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
100000
10000
1000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 51A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
V
V
V
= 60V
DS
= 38V
DS
= 15V
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRFS/SL7762PbF
1000
100
10
100µsec
1msec
100
10
1
T = 175°C
J
OPERATION
IN THIS
AREA
LIMITED BY
T = 25°C
J
R
(on)
DS
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
1.0
0.1
0.2
0.4
V
0.6
0.8
1.0
1.4
0.1
1
10
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.9
95
Id = 1.0mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90
85
80
75
-10
0
10 20 30 40 50 60 70 80
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
18.0
16.0
14.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
12.0
10.0
8.0
6.0
4.0
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
D
Fig 13. Typical On-Resistance vs. Drain Current
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February 19, 2015
IRFS/SL7762PbF
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
200
160
120
80
TOP
BOTTOM 1.0% Duty Cycle
= 51A
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
40
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)· av
t
6
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IRFS/SL7762PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
15
10
5
I = 34A
F
V
= 64V
R
T = 25°C
J
T = 125°C
J
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
I
D
I
D
I
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/µs)
J
F
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
400
20
I = 34A
I = 51A
F
F
V
= 64V
V
= 64V
R
R
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
300
200
100
0
15
10
5
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
300
I = 51A
F
V
= 64V
R
250
200
150
100
50
T = 25°C
J
T = 125°C
J
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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February 19, 2015
IRFS/SL7762PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFS/SL7762PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THISIS AN IRL3103L
LOTCODE1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW19, 1997
RECTIFIER
INTHEASSEMBLYLINE"C"
LOGO
DATE CODE
YEAR7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINEC
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLYSITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFS/SL7762PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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February 19, 2015
IRFS/SL7762PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRFS/SL7762PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D2Pak
Moisture Sensitivity Level
RoHS Compliant
MSL1
TO-262
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated EAS (L =1mH) = 243mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V” on page 2
2/19/2015
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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February 19, 2015
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