IRFS822 [SAMSUNG]
Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN;型号: | IRFS822 |
厂家: | SAMSUNG |
描述: | Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN 局域网 晶体管 |
文件: | 总1页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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