IRFS7440TRLPBF_技术文档

StrongIRFET

IRFS7440PbF

IRFSL7440PbF

Applications

l Brushed Motor drive applications

l BLDC Motor drive applications

l Battery powered circuits

l Half-bridge and full-bridge topologies

l Synchronous rectifier applications

l Resonant mode power supplies

l OR-ing and redundant power switches

l DC/DC and AC/DC converters

l DC/AC Inverters

HEXFET^®Power MOSFET

D

V_DSS

40V

R_DS(on)typ.

2.0m

2.5m

208A

max.

G

I_D

S

I_D

120A

(Package Limited)

D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

S

D

G

D²Pak

TO-262

IRFS7440PbF

IRFSL7440PbF

l RoHS Compliant containing no Lead, no Bromide,

and no Halogen

G

Gate

D

Drain

S

Source

Ordering Information

Base Part Number

Package Type

Standard Pack

Complete Part Number

Form

Quantity

IRFS7440PbF

IRFSL7440PbF

D2-Pak

TO-262

Tube

Tape and Reel Left

Tube

50

800

50

IRFS7440PbF

IRFS7440TRLPbF

IRFSL7440PbF

7.0

6.0

5.0

4.0

3.0

2.0

1.0

240

200

160

120

80

I

= 100A

D

Limited By Package

T

= 125°C

J

40

T

= 25°C

J

0

4

6

8

10 12 14

16 18 20

25

50

75

100

125

150

175

T

, Case Temperature (°C)

C

V

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

www.irf.com

1

October 10, 2012

IRFS/SL7440PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

208

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

147

A

120

772

208

P_D@T_C= 25°C

Maximum Power Dissipation

W

1.4

Linear Derating Factor

W/°C

V

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

238

298

mJ

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current

See Fig. 14, 15, 22a, 22b

A

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.72

40

Units

R_

Junction-to-Case

JC

°C/W

Junction-to-Ambient (PCB Mount)

JA

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

40

–––

V

V_GS= 0V, I_D= 250μA

V_(BR)DSS/T_J

R_DS(on)

––– 0.035 –––

V/°C Reference to 25°C, I_D= 5.0mA

m V_GS= 10V, I_D= 100A

m V_GS= 6.0V, I_D= 50A

–––

2.2

2.0

3.0

2.5

–––

3.9

V_GS(th)

I_DSS

Gate Threshold Voltage

3.0

V

V_DS= V_GS, I_D= 100μA

Drain-to-Source Leakage Current

–––

2.6

1.0

μA V_DS= 40V, V_GS= 0V

150

100

-100

–––

V

_DS= 40V, V_GS= 0V, T_J= 125°C

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

nA V_GS= 20V

V_GS= -20V



Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

ꢀ Pulse width  400μs; duty cycle  2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

.

some lead mounting arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.048mH

R_G= 50, I_AS= 100A, V_GS=10V.

C_osswhile V_DSis rising from 0 to 80% V_DSS

.

R_is measured at T_Japproximately 90°C.

This value determined from sample failure population,

starting T_J= 25°C, L= 0.048mH, R_G= 50, I_AS= 100A, V_GS=10V.

I_SD 100A, di/dt  1330A/μs, V_DDV_(BR)DSS, T_J 175°C.

2

www.irf.com

October 10, 2012

IRFS/SL7440PbF

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Q_g

Forward Transconductance

88

–––

135

–––

S

V_DS= 10V, I_D= 100A

Total Gate Charge

–––

90

nC I_D= 100A

V_DS=20V

Q_gs

Q_gd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

23

32

V_GS= 10V

Q_sync

t_d(on)

t_r

58

I_D= 100A, V_DS=0V, V_GS= 10V

24

ns V_DD= 20V

I_D= 30A

Rise Time

68

t_d(off)

t_f

Turn-Off Delay Time

115

68

R_G= 2.7

V_GS= 10V

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

4730

680

460

845

980

pF V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

ƒ = 1.0 MHz

C

_osseff. (ER)

V_GS= 0V, V_DS= 0V to 32V

C_osseff. (TR)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

D

S

I_S

Continuous Source Current

–––

193

A

V

MOSFET symbol

(Body Diode)

Pulsed Source Current

showing the

integral reverse

G

I_SM

–––

772

(Body Diode)

p-n junction diode.

T_J= 25°C, I_S= 100A, V_GS= 0V

V_SD

Diode Forward Voltage

Peak Diode Recovery

Reverse Recovery Time

–––

0.9

6.8

24

28

17

20

1.3

–––

dv/dt

t_rr

V/ns T_J= 175°C, I_S= 100A, V_DS= 40V

ns T_J= 25°C

T_J= 125°C

V_R= 34V,

I_F= 100A

di/dt = 100A/μs

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

nC T_J= 25°C

T_J= 125°C

I_RRM

A

T_J= 25°C

www.irf.com

3

October 10, 2012

IRFS/SL7440PbF

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

100

10

BOTTOM

4.5V

1

60μs PULSE WIDTH

Tj = 25°C

60μs PULSE WIDTH

Tj = 175°C



0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 3. Typical Output Characteristics

Fig 4. Typical Output Characteristics

1000

100

10

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I

= 100A

= 10V

D

V

GS

T

= 175°C

J

T

= 25°C

J

V

= 10V

DS



60μs PULSE WIDTH

1.0

3

4

5

6

7

8

9

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

I = 100A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

12.0

= C

rss

oss

gd

= C + C

V

= 32V

= 20V

DS

ds

gd

V

10.0

8.0

6.0

4.0

2.0

0.0

DS

C

iss

oss

rss

C

100

1

10

, Drain-to-Source Voltage (V)

100

0

20

40

60

80

100

120

V

Q , Total Gate Charge (nC)

DS

G

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

4

www.irf.com

October 10, 2012

IRFS/SL7440PbF

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

T

= 175°C

J

100μsec

1msec

Limited by

package

T

= 25°C

J

10msec

DC

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

0.0

0.5

1.0

1.5

2.0

2.5

0.1

1

10

100

V

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode

Forward Voltage

0.8

50

49

48

47

46

45

44

43

42

41

40

Id = 5.0mA

V

= 0V to 32V

DS

0.6

0.4

0.2

0.0

0

5

10 15 20 25 30 35 40 45

Drain-to-Source Voltage (V)

-60 -40 -20 0 20 40 60 80 100120140160180

, Temperature ( °C )

T

J

V

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_OSSStored Energy

40

V

= 5.5V

GS

= 6.0V

= 7.0V

= 8.0V

=10V

GS

30

20

10

0

100 200 300 400 500 600 700 800

I , Drain Current (A)

D

Fig 13. Typical On-Resistance vs. Drain Current

www.irf.com

5

October 10, 2012

IRFS/SL7440PbF

1

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

250

200

150

100

50

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

0

25

50

75

100

125

150

175

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 16. Maximum Avalanche Energy vs. Temperature

6

www.irf.com

October 10, 2012

IRFS/SL7440PbF

5.0

4.0

3.0

2.0

1.0

8

7

6

5

4

3

2

1

I = 60A

F

V

= 34V

R

T = 25°C

J

T = 125°C

J

I

= 100μA

= 1.0mA

= 1.0A

D

0

200

400

600

800

1000

-75 -50 -25

0

25 50 75 100 125 150 175

T , Temperature ( °C )

di /dt (A/μs)

F

J

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig 17. Threshold Voltage vs. Temperature

8

110

I = 100A

F

I = 60A

F

7

100

V

= 34V

V

= 34V

R

T = 25°C

J

6

5

4

3

2

1

90

80

70

60

50

40

T = 125°C

J

T = 125°C

J

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 19 - Typical Recovery Current vs. di_f/dt

Fig. 20 - Typical Stored Charge vs. di_f/dt

100

I = 100A

F

V

= 34V

R

80

60

40

20

0

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

www.irf.com

7

October 10, 2012

IRFS/SL7440PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

-

*

=10V

V

GS

Circuit Layout Considerations

 Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

Driver same type as D.U.T.

I_SDcontrolled by Duty Factor "D"

D.U.T. - Device Under Test

Inductor Current

Inductor Curent

I

SD

Ripple  5%

* V_GS= 5V for Logic Level Devices

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

2V0_GV_S



0.01

t

p

I

AS

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width µs

Duty Factor 

V

GS

t

r

t

f

d(on)

d(off)

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50K

.2F

12V

.3F

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

8

www.irf.com

October 10, 2012

IRFS/SL7440PbF

D²Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D²Pak (TO-263AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

9

October 10, 2012

IRFS/SL7440PbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

www.irf.com

October 10, 2012

IRFS/SL7440PbF

D²Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

4

3

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information

†

Qualification level

Industrial††

(per JEDEC JESD47F††† guidelines)

Moisture Sensitivity Level

RoHS compliant

D2Pak

TO-262

MS L1

†††

(per JEDEC J-S TD-020D

Not applicable

)

Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Higher qualification ratings may be available should the user have such requirements. Please contact your

International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/2012

www.irf.com

11

October 10, 2012


型号：	IRFS7440TRLPBF
厂家：	Infineon
描述：	Applications 应用晶体晶体管开关脉冲
文件：	总11页 (文件大小：326K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFS7440TRLPBF [INFINEON]

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