IRFS7437TRLPBF [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | IRFS7437TRLPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总11页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET
IRFS7437PbF
Applications
IRFSL7437PbF
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
HEXFET® Power MOSFET
VDSS
40V
D
RDS(on) typ.
max.
1.4mΩ
1.8mΩ
G
ID
250A
(Silicon Limited)
ID
195A
(Package Limited)
S
D
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
S
S
D
l Fully Characterized Capacitance and Avalanche
G
G
SOA
D2Pak
TO-262
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFSL7437PbF
IRFS7437PbF
l Halogen-Free
G
D
S
Gate
Drain
Source
Ordering Information
Base part number
Package Type
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Complete Part
Number
IRFSL7437PbF
IRFS7437PbF
IRFS7437TRLPbF
Quantity
50
IRFSL7437PbF
IRFS7437PbF
IRFS7437PbF
TO-262
D2Pak
D2Pak
50
800
6
5
4
3
2
1
0
250
200
150
100
50
LIMITED BY PACKAGE
I
= 100A
D
T
= 125°C
= 25°C
J
T
J
0
4.0
6.0
8.0 10.0 12.0 14.0 16.0 18.0 20.0
, Gate-to-Source Voltage (V)
25
50
75
100
125
150
175
V
T
, Case Temperature (°C)
GS
C
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com
1
September06,2012
IRFS/SL7437PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
250
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
180
A
195
1000
230
PD @TC = 25°C
Maximum Power Dissipation
W
1.5
Linear Derating Factor
W/°C
V
± 20
VGS
Gate-to-Source Voltage
3.0
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
350
500
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
0.65
40
Units
Rθ
Rθ
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D2Pak
JC
°C/W
JA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250μA
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
2.2
1.4
2.0
3.0
1.8
–––
3.9
1.0
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
RDS(on)
VGS(th)
IDSS
Gate Threshold Voltage
V
V
V
V
V
DS = VGS, ID = 150μA
DS = 40V, VGS = 0V
DS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
Drain-to-Source Leakage Current
––– –––
μA
––– ––– 150
––– ––– 100
––– ––– -100
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
VGS = -20V
–––
2.2
–––
Ω
Notes:
Calculated continuous current based on maximum allowable junction
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 25Ω, IAS = 100A, VGS =10V.
.
Coss while VDS is rising from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L=0.095mH, RG = 25Ω, IAS = 100A, VGS =10V
ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
www.irf.com
September06,2012
IRFS/SL7437PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
160 ––– –––
S
VDS = 10V, ID = 100A
nC ID = 100A
DS =20V
VGS = 10V
ID = 100A, VDS =20V, VGS = 10V
ns VDD = 20V
Qg
Total Gate Charge
––– 150 225
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
41
51
99
19
70
78
53
–––
–––
–––
–––
–––
–––
–––
V
ID = 30A
RG = 2.7Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 7330 –––
––– 1095 –––
––– 745 –––
––– 1310 –––
––– 1735 –––
pF VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
V
DS = 25V
ƒ = 1.0 MHz, See Fig. 5
C
oss eff. (ER) Effective Output Capacitance (Energy Related)
V
V
GS = 0V, VDS = 0V to 32V , See Fig. 11
GS = 0V, VDS = 0V to 32V
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
––– ––– 250
A
A
V
MOSFET symbol
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 1000
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
VSD
trr
–––
–––
–––
–––
–––
–––
1.0
30
30
24
25
1.3
1.3
–––
–––
–––
–––
–––
ns TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
nC TJ = 25°C
TJ = 125°C
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
3
September06,2012
IRFS/SL7437PbF
1000
1000
100
10
VGS
15V
VGS
15V
10V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
BOTTOM
4.5V
10
4.5V
≤60μs PULSE WIDTH
60μs PULSE WIDTH
≤
Tj = 25°C
Tj = 175°C
10
, Drain-to-Source Voltage (V)
1
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
DS
V
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
100
10
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤60μs PULSE WIDTH
1.0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
3
4
5
6
7
8
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I = 100A
D
V
V
= 32V
= 20V
= C + C , C SHORTED
DS
DS
iss
gs
gd ds
12
10
8
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
6
C
oss
C
rss
4
2
0
100
0
40
Q
80
120
160
200
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
September06,2012
IRFS/SL7437PbF
1000
100
10
1000
100
10
100μsec
T
= 175°C
J
1msec
Limited by Package
T
= 25°C
J
10msec
DC
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
1.2
50
48
46
44
42
40
Id = 1.0mA
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
-60 -40 -20 0 20 40 60 80 100120140160180
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
DS,
T
J
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
8
7
6
V
= 5.5V
= 6.0V
GS
V
GS
5
V
= 7.0V
GS
VGS = 8.0V
VGS = 10V
4
3
2
1
0
100
200
300
400
500
I
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
www.irf.com
5
September06,2012
IRFS/SL7437PbF
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
ΔΤ
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
350
300
250
200
150
100
50
TOP
BOTTOM 1% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 16. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
September06,2012
IRFS/SL7437PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
8
I
= 60A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
6
I
I
I
= 150μA
= 1.0mA
= 1.0A
D
D
D
4
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/μs)
J
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
10
140
120
100
80
I
= 100A
= 34V
I
= 60A
= 34V
F
F
V
V
R
R
8
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
60
4
40
2
20
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
140
I
= 100A
= 34V
F
120
100
80
60
40
20
0
V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 21 - Typical Stored Charge vs. dif/dt
www.irf.com
7
September06,2012
IRFS/SL7437PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
Ω
0.01
t
p
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 23a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 25a. Gate Charge Test Circuit
Fig 25b. Gate Charge Waveform
8
www.irf.com
September06,2012
IRFS/SL7437PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WE EK 02
AS S E MBL Y
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WE E K 02
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
September06,2012
IRFS/SL7437PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
September06,2012
IRFS/SL7437PbF
Qualification information
†
Qualification level
Industrial††
(per JEDEC JESD47F††† guidelines)
Moisture Sensitivity Level
RoHS compliant
D2Pak
TO-262
MS L1
(per JEDEC J-S TD-020D
Not applicable
†††
)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
www.irf.com
11
September06,2012
相关型号：
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