IRFH8334PBF-1 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFH8334PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH8334PbF-1
HEXFET® Power MOSFET
VDS
30
V
V
VGS max
± 20
RDS(on) max
(@VGS = 10V)
9.0
m
Ω
(@VGS = 4.5V)
13.5
7.1
Qg typ.
nC
A
PQFN 5X6 mm
ID
25
(@Tc(Bottom) = 25°C)
Applications
• Control MOSFET for high frequency buck converters
Features
Benefits
Industry-standard pinout PQFN 5 x 6mm Package
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Standard Pack
Base Part Number
Package Type
Orderable Part Number
IRFH8334TRPBF-1
Form
Tape and Reel
Quantity
IRFH8334PBF-1
PQFN 5mm x 6mm
4000
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
± 20
14
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
12
44
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
A
28
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
25
I
I
@ TC = 25°C
D
100
3.2
30
DM
Power Dissipation
Power Dissipation
P
P
@TA = 25°C
D
D
W
@TC(Bottom) = 25°C
0.026
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 9
1
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August 29, 2014
IRFH8334PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
9.0
V
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.021
V/°C Reference to 25°C, ID = 1.0mA
–––
–––
1.35
–––
–––
–––
–––
–––
44
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
VGS = 10V, ID = 20A
mΩ
13.5
2.35
VGS = 4.5V, ID = 16A
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = 25μA
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = 20V
nA
S
VGS = -20V
gfs
Qg
Qg
VDS = 10V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
ID = 20A
Qgodr
Qsw
Qoss
RG
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 30V, VGS = 4.5V
Rise Time
–––
–––
–––
–––
–––
–––
ID = 20A
ns
Ω
RG=1.8
Turn-Off Delay Time
7.0
4.6
1180
260
110
Fall Time
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
pF
Output Capacitance
VDS = 10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
35
20
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
25
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
100
S
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
13
1.0
20
29
V
J
S
GS
T = 25°C, I = 20A, VDD = 15V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 380 A/μs
19
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
4.1
37
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
39
RθJA (<10s)
26
2
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IRFH8334PbF-1
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
0.1
0.01
2.5V
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤60μs PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
C
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
iss
C
C
oss
rss
10
1
10
100
0
2
4
6
8
10 12 14 16 18 20
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH8334PbF-1
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 150°C
J
Limited by
Source Bonding
Technology
T
= 25°C
J
10msec
1
Tc = 25°C
DC
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
1.0
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.8
45
Limited By Source
Bonding Technology
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
35
30
25
20
15
10
5
I
I
I
I
= 25μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH8334PbF-1
30
25
20
15
10
5
160
140
120
100
80
I
I
= 20A
D
D
TOP
3.7A
8.2A
BOTTOM 20A
60
T
= 125°C
J
40
T
= 25°C
20
J
0
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
5
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IRFH8334PbF-1
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH8334PbF-1
PQFN 5x6 Outline "E" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
August 29, 2014
IRFH8334PbF-1
PQFN 5x6 Outline "E" Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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August 29, 2014
IRFH8334PbF-1
Qualification information†
Industrial
Qualification level
(per JEDEC JES D47F †† guidelines )
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 25A by source bonding technology.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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August 29, 2014
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