IRF9953PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF9953PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总7页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95477
IRF9953PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
1
2
3
4
8
S1
G1
D1
VDSS = -30V
7
D1
6
S2
D2
5
G2
D2
RDS(on) = 0.25Ω
l Fully Avalanche Rated
l Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS
VGS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
± 20
-2.3
V
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
-1.8
A
Pulsed
Drain
-10
CurrentI
DM
Continuous Source Current (Diode Conduction)
IS
1.6
TA = 25°C
TA = 70°C
2.0
1.3
Maximum Power Dissipation ꢀ
P
D
W
Single Pulse Avalanche Energy
Avalanche
EAS
57
mJ
A
CurrentIAR
-1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
V/
mJ
dv/dt-5.0
TJ, TSTG
ns
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
7/16/04
IRF9953PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = -1mA
0.165 0.250
0.290 0.400
-1.0
-2.4
-2.0
-25
100
-100
VGS = 10V, ID = -1.0A
VGS = 4.5V, ID = -0.50A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -2.3A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
6.1
12
ID = -2.3A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
1.7 3.4
1.1 2.2
nC VDS = -10V
VGS = -10V, See Fig. 10
9.7
14
20
6.9
19
28
40
14
VDD = -10V
ID = -1.0A
RiseTime
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
190
120
61
Output Capacitance
VDS = -15V
= 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
1.3
A
ISM
Pulsed
Source
egral reverse
G
Currentint
16
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
0.82 1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V
TJ = 25°C, IF = -1.25A
27
31
54
62
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 67mH
RG = 25Ω, IAS = -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
IRF9953PbF
100
10
1
100
10
1
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
10
1
10
TJ = 25°C
TJ= 150°C
T = 150°C
J
T = 25°C
J
1
VDS = -10V
20µs PULSE WIDTH
8.0A
V
= 0V
GS
0.1
A
0.1
3.0
4.0
5.0
6.0
7.0
0.4
0.6
0.8
1.0
1.2
1.4
-VGS , Gate-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
IRF9953PbF
2.5
2.0
1.5
1.0
0.5
0.0
2.0
-1.0A
=
I
D
1.5
1.0
0.5
0.0
V
= -4.5V
GS
V
GS
= -10V
V
=-10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0.0
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.80
150
I
D
TOP
-0.58A
-1.0A
BOTTOM -1.3A
120
90
60
30
0
0.60
0.40
0.20
0.00
I
= -2.3A
D
A
25
50
75
100
125
150
0
3
6
9
12
15
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
IRF9953PbF
20
16
12
8
400
300
200
100
0
V
C
C
C
= 0V,
f = 1MHz
I
D
= -2.3A
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
=-10V
gs
gd
gd
ds
DS
= C
= C + C
ds
gd
C
C
iss
oss
C
rss
4
0
A
0
2
4
6
8
10
1
10
100
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9953PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
IRF9953PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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