IRF9953TR [INFINEON]
暂无描述;
| 型号： | IRF9953TR |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1560A
IRF9953
PRELIMINARY
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
1
8
S1
D 1
VDSS = -30V
2
7
G 1
D 1
3
6
S2
D 2
l Very Low Gate Charge and
Switching Losses
4
5
G 2
D 2
RDS(on) = 0.25Ω
l Fully Avalanche Rated
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
V
VGS
± 20
-2.3
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
-1.8
A
Pulsed Drain Current
IDM
IS
-10
Continuous Source Current (Diode Conduction)
1.6
TA = 25°C
TA = 70°C
2.0
Maximum Power Dissipation ꢀ
PD
W
1.3
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
57
mJ
A
-1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
-5.0
mJ
V/ ns
°C
dv/dt
TJ, TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
8/25/97
IRF9953
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.165 0.250
––– 0.290 0.400
-1.0 ––– –––
––– -2.4 –––
––– ––– -2.0
––– ––– -25
––– ––– 100
––– ––– -100
VGS = 10V, ID = -1.0A
VGS = 4.5V, ID = -0.50A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -2.3A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 6.1
12
ID = -2.3A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 1.7 3.4
––– 1.1 2.2
nC VDS = -10V
VGS = -10V, See Fig. 10
––– 9.7
––– 14
––– 20
––– 6.9
19
28
40
14
VDD = -10V
ID = -1.0A
RiseTime
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 190 –––
––– 120 –––
––– 61 –––
Output Capacitance
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 1.3
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
G
––– ––– 16
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.82 1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V
––– 27
––– 31
54
62
ns
TJ = 25°C, IF = -1.25A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 67mH
RG = 25Ω, IAS = -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
IRF9953
1 0 0
1 0
1
1 0 0
1 0
1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
TOP
TOP
BOTT OM - 3.0V
BOTT OM - 3.0V
-3.0V
-3.0V
20µs P ULSE WIDTH
20µs P ULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0. 1
0. 1
0. 1
1
1 0
0. 1
1
1 0
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1 0 0
1 0 0
1 0
1
1 0
T
= 25°C
T
T
= 150°C
J
J
= 150°C
J
T
= 25°C
J
1
V
= -1 0V
DS
20µs P ULS E W IDTH
V
= 0V
G S
0. 1
0. 1
A
8. 0 A
3. 0
4. 0
5. 0
6. 0
7. 0
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
-VG S , Ga te-to-So urce Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
IRF9953
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
2.0
-1.0A
=
I
D
1.5
1.0
0.5
0.0
V
= -4.5V
GS
V
= -10V
GS
V
= -10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0. 0
1. 0
2. 0
3. 0
4. 0
5. 0
T , Junction Temperature ( C)
J
-I , D rain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0 . 8 0
150
I
D
TOP
-0.58A
-1.0A
120
90
60
30
0
BOTTOM -1.3A
0 . 6 0
0 . 4 0
0 . 2 0
0 . 0 0
I
= -2.3A
D
A
25
50
75
100
125
150
0
3
6
9
1 2
1 5
°
Starting T , Junction Temperature ( C)
J
-V G S , Gate -to-Source Voltage (V)
Fig 8. Maximum Avalanche Energy
Fig 7. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
IRF9953
4 0 0
3 0 0
2 0 0
1 0 0
0
20
16
12
8
V
C
C
C
= 0V ,
f = 1MHz
I
D
= -2.3A
GS
iss
= C
= C
= C
+ C
+ C
,
C
S HORTED
gs
g d
ds
g d
ds
V
=-10V
DS
rss
oss
gd
C
C
iss
o s s
C
rs s
4
0
A
0
2
4
6
8
10
1
1 0
1 0 0
Q
, Total Gate Charge (nC)
G
-VD S , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9953
Package Outline
SO8 Outline
IN C H E S
M IL L IM ET ER S
D IM
D
- B -
M IN
M A X
. 0 6 8 8
. 0 0 9 8
. 0 1 8
M IN
1 .3 5
0 .1 0
0 .3 6
0 .1 9
4 .8 0
3 .8 1
M AX
1 .7 5
0 .2 5
0 .4 6
0 .2 5
4 .9 8
3 .9 9
5
A
.0 5 3 2
.0 0 4 0
.0 1 4
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0 0 7 5
.1 8 9
.0 09 8
.1 96
0.25 (.01 0)
M
A M
- A -
.1 5 0
. 1 5 7
e
6X
e
.0 5 0 B AS IC
.0 2 5 B AS IC
1 .2 7 B AS IC
K x 45°
e1
e 1
H
K
0 .6 3 5 B AS IC
θ
.2 2 8 4
.0 1 1
.2 44 0
5 .8 0
0 .2 8
0 .4 1
6 .2 0
0 .4 8
1 .2 7
A
. 0 1 9
.0 5 0
8°
- C -
0.10 (.0 04)
6
C
8X
L
8X
L
0 .1 6
A1
B
8X
θ
0 °
0 °
8 °
0.25 (.010)
M
C A S B S
RECOMM EN DED FOOTPR INT
N OTES:
0.72 (.028 )
8X
1. D IMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C ONTROLLING D IMENSION : IN CH.
3. D IMENSIONS ARE SHOW N IN M ILLIMETER S (INC HES).
4. OU TLIN E CONFORM S TO JEDEC OU TLINE MS-01 2AA.
6.46 ( .255 )
1.78 (.07 0)
8X
5
DIM ENSION DOES NOT INCLU DE M OL D PROTRUSIONS
MOLD PR OTRU SIONS NOT TO EXCEED 0.25 (.006).
DIM ENSIONS IS TH E LENGTH OF LEAD FOR SOLDERIN G TO A SUBSTRATE..
6
1.27 ( .0 50 )
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7 101
DATE CODE (YW W )
LAST DIGIT OF THE YEAR
W EEK
Y
=
W W
=
3 12
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7 101
W AFER
LOT CODE
PART NUM BER
TOP
(LAST
4 DIGITS)
BOTTOM
IRF9953
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M BE R
1
1 2. 3
1 1. 7
(
(
.48 4
.46 1
)
)
8 .1
7 .9
(
(
.3 18
.3 12
)
)
F E E D D IR E C T IO N
N OTES:
1 . CO NTR OLL IN G DIM EN SION : M ILL IM ETER.
2 . ALL D IM ENSIONS AR E SHO W N IN M ILL IM ETER S(IN CH ES).
3 . OU TLINE C ON FORM S TO EIA-4 81 & EIA-54 1.
3 30 .00
(12 .9 92 )
M A X .
1 4.4 0
1 2.4 0
(
(
.5 66
.4 88
)
)
N O T ES
1. C O N T R O LL IN G D IM E N S IO N
2. O U T LIN E C O N F O R M S T O E IA -48 1
:
:
M IL L IM E T E R .
EIA -5 41 .
&
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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