IRF9956TR [INFINEON]

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA;


型号：	IRF9956TR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA 局域网开关脉冲光电二极管晶体管
文件：	总7页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91559B

IRF9956

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Surface Mount

l Very Low Gate Charge and

Switching Losses

V_DSS= 30V

R_DS(on)= 0.10Ω

l Fully Avalanche Rated

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

Recommended upgrade: IRF7303 or IRF7313

Lower profile/smaller equivalent: IRF7503

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

3.5

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

2.8

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

1.7

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

P_D

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

2.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

5.0

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

04/29/03

IRF9956

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

0.015 V/°C Reference to 25°C, I_D= 1mA

0.06 0.10

0.09 0.20

1.0

2.0

100

-100

V_GS= 10V, I_D= 2.2A

_GS= 4.5V, I_D= 1.0A

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D= 3.5A

Forward Transconductance

_DS= 24V, V_GS= 0V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 24V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -24V

Q_g

6.9

I_D= 1.8A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

1.0 2.0

1.8 3.5

nC V_DS= 10V

V_GS= 10V, See Fig. 10

6.2

8.8

V_DD= 10V

I_D= 1.0A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

3.0 6.0

190

120

R_D= 10Ω

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= 15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

1.7

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

0.82 1.2

T_J= 25°C, I_S= 1.25A, V_GS= 0V

T_J= 25°C, I_F= 1.25A

Q_rr

di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by

I_SD≤ 2.0A, di/dt ≤ 100A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 22mH

R_G= 25Ω, I_AS= 2.0A.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Surface mounted on FR-4 board, t ≤ 10sec.

IRF9956

100

VGS

15V

VGS

15V

TOP

10V

7.0V

5.5V

4.5V

4.0V

3.5V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

20µs PULSE WIDTH

= 25°C

= 150°C

0.1

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

T_J= 25°C

T = 150°C

T_J= 150°C

T = 25°C

V_DS= 10V

20µs PULSE WIDTH

_6.0A

= 0V

0.1

0.4

0.6

0.8

1.0

1.2

1.4

3.0

3.5

4.0

4.5

5.0

5.5

, Source-to-Drain Voltage (V)

V_GS, Gate-to-Source Voltage (V)

Fig 4. Typical Source-Drain Diode

Fig 3. Typical Transfer Characteristics

Forward Voltage

IRF9956

0.12

0.10

0.08

0.06

0.04

2.0

2.2A

1.5

1.0

0.5

0.0

= 4.5V

= 10V

=10V

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

I , Drain Current (A)

Fig 4. Normalized On-Resistance

Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature

Current

0.16

0.14

0.12

0.10

0.08

100

TOP

0.89A

1.6A

BOTTOM 2.0A

= 3.5A

0.06

0.04

0.02

0.00

150

100

125

Starting T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Fig 8. Maximum Avalanche Energy

Voltage

Vs. Drain Current

IRF9956

350

300

250

200

150

100

= 0V,

f = 1MHz

= 1.8A

iss

rss

oss

= C + C

SHORTED

= 10V

= C

= C + C

iss

oss

rss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance Vs.

Fig 10. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF9956

Package Outline

SO8 Outline

INCHES

MIN MAX

.0532 .0688 1.35

MILLIMETERS

DIM

- B -

MIN

MAX

1.75

0.25

0.46

0.25

4.98

3.99

A1 .0040 .0098 0.10

.014

.018

0.36

- A -

.0075 .0098 0.19

0.25 (.010)

A M

.189

.150

.196

.157

4.80

3.81

.050 BASIC

.025 BASIC

1.27 BASIC

0.635 BASIC

5.80 6.20

K x 45°

.2284 .2440

.011

0.16

0°

.019

.050

8°

0.28

0.41 1.27

0° 8°

0.48

- C -

0.10 (.004)

C A S B S

B 8X

0.25 (.010)

RECOMMENDED FOOTPRINT

NOTES:

0.72 (.028 )

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

6.46 ( .255 )

1.78 (.070)

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

1.27 ( .050 )

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

312

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

WAFER

LOT CODE

PART NUMBER

TOP

(LAST 4 DIGITS)

BOTTOM

IRF9956

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/03

IRF9956TR [INFINEON]

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