IRF100B202_15 [INFINEON]
Brushed Motor drive applications;型号: | IRF100B202_15 |
厂家: | Infineon |
描述: | Brushed Motor drive applications |
文件: | 总10页 (文件大小:526K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
StrongIRFET™
IRF100B202
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
VDSS
100V
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
RDS(on) typ.
max
7.2m
8.6m
ID (Silicon Limited)
97A
S
D
Benefits
G
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRF100B202
TO-220
Tube
50
IRF100B202
25
20
15
10
5
100
80
60
40
20
0
I
= 58A
D
T
T
= 125°C
J
= 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On– Resistance vs. Gate Voltage
1
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IRF100B202
Absolute Maximum Rating
Symbol
Parameter
Max.
97
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
68
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
380
221
1.5
PD @TC = 25°C
W
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
189
Single Pulse Avalanche Energy
mJ
EAS (Thermally limited)
EAS (tested)
IAR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
292
217
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
0.68
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100 ––– –––
––– 0.10 –––
V
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 5mA
V(BR)DSS/TJ
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
7.2
8.6
4.0
20
VGS = 10V, ID = 58A
VDS = VGS, ID = 150µA
VDS =100 V, VGS = 0V
m
V
2.0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 250
––– ––– 100
––– ––– -100
V
V
V
DS = 80V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
GS = 20V
GS = -20V
IGSS
RG
nA
–––
2.4
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.113mH, RG = 50, IAS = 58A, VGS =10V.
ISD 58A, di/dt 1316A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 24A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 0.113mH, RG = 50, IAS =58A, VGS =10V.
2
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IRF100B202
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
123
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
77
20
23
54
11
56
–––
116
–––
–––
–––
–––
–––
S
VDS = 10V, ID =58A
Qg
ID = 58A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
VDS = 50V
VGS = 10V
nC
Qgd
Qsync
td(on)
tr
VDD = 65V
ID = 58A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
55
58
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
VGS = 0V
DS = 50V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4476
319
154
V
ƒ = 1.0MHz, See Fig.5
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
355
385
–––
–––
VGS = 0V, VDS = 0V to 80V
VGS = 0V, VDS = 0V to 80V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
IS
–––
–––
97
A
G
S
ISM
–––
–––
–––
–––
380
1.3
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 58A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
28
51
––– V/ns TJ = 175°C,IS =58A,VDS = 100V
–––
–––
–––
–––
TJ = 25°C
VDD = 85V
IF = 58A,
trr
Reverse Recovery Time
ns
58
TJ = 125°C
105
133
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
–––
3.7
–––
TJ = 25°C
3
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IRF100B202
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
4.0V
60µs
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
3.0
2.5
2.0
1.5
1.0
0.5
I
= 58A
D
V
= 10V
GS
100
10
1
T
= 175°C
T
= 25°C
= 50V
J
J
V
DS
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60
-20
20
T , Junction Temperature (°C)
J
60
100
140
180
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
14
V
C
= 0V,
f = 1 MHZ
GS
= C + C , C SHORTED
I
= 58A
V
iss
gs
gd ds
D
12
10
8
C
= C
rss
gd
= 80V
= 50V
DS
C
= C + C
oss
ds
gd
V
DS
10000
1000
100
VDS= 20V
C
iss
6
C
oss
4
C
rss
2
0
0.1
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Gate-to-Source Voltage
4
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IRF100B202
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
V
= 0V
1.5
GS
Single Pulse
1
0.1
0.1
1
10
100
0.0
0.5
1.0
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.0
130
Id = 5.0mA
1.6
1.2
0.8
0.4
0.0
120
110
100
90
0
20
40
60
80
100
120
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
40
VGS = 5.0V
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
35
30
25
20
15
10
5
0
20
40
60
80
100
120
I , Drain Current (A)
D
Fig 13. Typical On– Resistance vs. Drain Current
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IRF100B202
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
200
150
100
50
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
= 58A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
0
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRF100B202
30
25
20
15
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 39A
= 85V
F
V
R
T = 25°C
J
T = 125°C
J
I
= 150µA
D
ID = 250µA
I
= 1.0mA
D
D
I
= 1.0A
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
di /dt (A/µs)
F
T
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
1600
1200
800
400
0
25
20
15
10
5
I
= 39A
= 85V
I
= 58A
= 85V
F
F
V
V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
1600
I
= 58A
= 85V
F
V
R
T = 25°C
J
1200
800
400
0
T = 125°C
J
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRF100B202
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRF100B202
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
O
N
W
W
1 9 , 2 0 0 0
Y E A R
E E K 1 9
L IN E
0
=
2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
W
-
L O
T C O D E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRF100B202
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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