IRF100S201 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF100S201 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总12页 (文件大小：617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRF100B201
IRF100S201
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
VDSS
100V
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
RDS(on) typ.
max
3.5m
4.2m
ID (Silicon Limited)
192A
D
Benefits
S
D
S
G
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
D2-Pak
IRF100S201
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
50
IRF100B201
IRF100S201
TO-220
D2-Pak
Tube
IRF100B201
IRF100S201
Tape and Reel
800
20
18
16
14
12
10
8
200
160
120
80
I
= 115A
D
T
= 125°C
J
6
40
T
= 25°C
J
4
2
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On– Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
1
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March 26, 2015
IRF100B201/IRF100S201
Absolute Maximum Rating
Symbol
Parameter
Max.
192
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
136
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
690
441
2.9
PD @TC = 25°C
W
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
567
Single Pulse Avalanche Energy
mJ
EAS (Thermally limited)
EAS (tested)
IAR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
1005
240
A
mJ
See Fig 15, 15, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.34
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
RJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB Mount)
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V
Breakdown Voltage Temp. Coefficient
–––
–––
0.1
3.5
–––
V/°C Reference to 25°C, ID = 5mA
V(BR)DSS/TJ
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
4.2
4.0
20
VGS = 10V, ID = 115A
VDS = VGS, ID = 250µA
VDS =100 V, VGS = 0V
m
V
2.0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 250
––– ––– 100
––– ––– -100
V
V
V
DS = 80V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
GS = 20V
GS = -20V
IGSS
RG
nA
–––
2.2
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 115A, VGS =10V.
ISD 115A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 45A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 86µH, RG = 50, IAS =115A, VGS =10V.
2
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March 26, 2015
IRF100B201/IRF100S201
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
278
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
VDS = 10V, ID = 115A
ID = 115A
–––
170
46
–––
255
–––
–––
–––
–––
–––
S
Qg
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
VDS = 50V
nC
Qgd
45
VGS = 10V
Qsync
td(on)
tr
125
17
VDD = 65V
ID = 115A
Rise Time
97
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
110
100
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
VGS = 0V
DS = 50V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
9500
660
310
V
ƒ = 1.0MHz, See Fig.TBD
VGS = 0V, VDS = 0V to 80V
VGS = 0V, VDS = 0V to 80V
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
725
950
–––
–––
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
IS
–––
–––
192
A
G
S
ISM
–––
–––
–––
–––
690
1.3
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 115A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
18
47
––– V/ns TJ = 175°C,IS =115A,VDS = 100V
–––
–––
–––
–––
TJ = 25°C
VDD = 85V
IF = 115A,
trr
Reverse Recovery Time
ns
55
TJ = 125°C
90
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
123
TJ = 125°C
IRRM
–––
3.5
–––
TJ = 25°C
3
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March 26, 2015
IRF100B201/IRF100S201
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
4.0V
60µs
PULSE WIDTH
Tj = 175°C
60µs
Tj = 25°C
PULSE WIDTH
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
I
= 115A
= 10V
D
V
GS
T
= 175°C
T
= 25°C
J
J
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14
V
= 0V,
= C
f = 1 MHZ
GS
I
= 115A
V
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= 80V
= 50V
DS
= C + C
ds
gd
V
DS
C
VDS= 20V
iss
C
oss
6
4
C
rss
2
100
0
0.1
1
10
100
0
40
80
120
160
200
240
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage
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4
IRF100B201/IRF100S201
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100
10
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
1
Single Pulse
V
GS
= 0V
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
3.5
130
Id = 5.0mA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
120
110
100
90
-10
0
10 20 30 40 50 60 70 80 90 100
V Drain-to-Source Voltage (V)
DS,
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
J
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
10
VGS = 5.0V
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8
6
4
2
0
40
I
80
120
160
200
, Drain Current (A)
D
Fig 13. Typical On– Resistance vs. Drain Current
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March 26, 2015
IRF100B201/IRF100S201
1
0.1
D = 0.50
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
600
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 115A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
J
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRF100B201/IRF100S201
35
30
25
20
15
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I = 77A
F
V
= 85V
R
T = 25°C
J
T = 125°C
J
I
= 250µA
D
ID = 1.0mA
I
= 10mA
D
D
I
= 1.0A
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
25 50 75 100 125 150 175
di /dt (A/µs)
F
T
, Temperature ( °C )
J
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
35
30
25
20
15
10
5
1000
I = 115A
F
I = 77A
F
V
= 85V
V
= 85V
R
R
800
600
400
200
0
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
1000
I = 115A
F
V
= 85V
R
800
600
400
200
0
T = 25°C
J
T = 125°C
J
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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March 26, 2015
IRF100B201/IRF100S201
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRF100B201/IRF100S201
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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March 26, 2015
IRF100B201/IRF100S201
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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March 26, 2015
IRF100B201/IRF100S201
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF100B201/IRF100S201
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
D2Pak
N/A
Moisture Sensitivity Level
RoHS Compliant
MSL1
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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March 26, 2015
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