IRF1010EPBF [KERSEMI]
Advanced Process Technology Ultra Low On-Resistance; 先进的工艺技术超低导通电阻
| 型号： | IRF1010EPBF |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Advanced Process Technology Ultra Low On-Resistance |
| 文件： | 总8页 (文件大小：3121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF1010EPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 60V
RDS(on) = 12mΩ
G
l Fully Avalanche Rated
l Lead-Free
ID = 84A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
84
59
A
330
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.4
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Current
50
17
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
4.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
0.75
–––
62
°C/W
1
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07/04/07
IRF1010EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 12
mΩ VGS = 10V, ID = 50A
2.0
69
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 50A
VDS = 60V, VGS = 0V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 130
––– ––– 28
––– ––– 44
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 50A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
78 –––
48 –––
53 –––
VDD = 30V
ID = 50A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.6Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
––– 3210 –––
––– 690 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
pF
ƒ = 1.0MHz, See Fig. 5
––– 1180ꢀ320 mJ IAS = 50A, L = 260µH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
––– –––
84
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
330
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 73 110
––– 220 330
V
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12)
ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
junction temperature. Package limitation current is 75A.
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2
IRF1010EPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
°
T = 175 C
J
20µs PULSE WIDTH
°
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
84A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
5
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF1010EPbF
6000
V
C
= 0V,
f = 1 MHZ
GS
20
16
12
8
= C + C
,
C
ds
SHORTED
I = 50A
D
iss
gs
gd
C
= C
5000
4000
3000
2000
1000
0
rss
gd
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C + C
ds gd
oss
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
0
0
20
40
60
80
100
120
140
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.0
1
0.6
1.2
1.8
2.4
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1010EPbF
100
80
60
40
20
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRF1010EPbF
800
600
400
200
0
I
D
15V
TOP
20A
35A
BOTTOM 50A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
VGS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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6
IRF1010EPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7
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IRF1010EPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
8
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