IRF100P218 [INFINEON]
100V 单个 N 通道 StrongIRFET™ Power MOSFET, 采用 TO-247 封装;
| 型号： | IRF100P218 |
| 厂家： | 
Infineon |
| 描述： | 100V 单个 N 通道 StrongIRFET™ Power MOSFET, 采用 TO-247 封装 |
| 文件： | 总11页 (文件大小：1135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF100P218
MOSFET
PG-TOꢀ247-3
StrongIRFETª
Features
•ꢀVeryꢀlowꢀRDS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀ(FOM)
•ꢀOptimizedꢀQrr
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀProductꢀvalidationꢀaccordingꢀtoꢀJEDECꢀstandard
•ꢀOptimizedꢀforꢀbroadestꢀavailabilityꢀfromꢀdistributionꢀpartners
1
2
3
Benefits
•ꢀReducedꢀconductionꢀlosses
•ꢀIdealꢀforꢀhighꢀswitchingꢀfrequency
•ꢀLowerꢀovershootꢀvoltage
Drain
Pin 2
•ꢀIncreasedꢀreliabilityꢀversusꢀ150°Cꢀratedꢀparts
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Gate
Pin 1
Source
Pin 3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
1.1
Unit
VDS
V
RDS(on),typ
mΩ
mΩ
A
RDS(on),max
ID(SiliconꢀLimited)
ID(PackageꢀLimited)
QG(0V..10V)
1.28
483
209
330
A
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IRF100P218
PG-TO 247-3
IRF100P218
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=25ꢀ°Cꢀ(siliconꢀlimited)
-
-
-
-
-
-
209
483
341
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°Cꢀ(silicon
limited)1)
Pulsed drain current1)
Avalanche energy, single pulse2)
ID,pulse
EAS
-
-
-
-
836
A
TC=25ꢀ°C
-
1050 mJ
ID=100ꢀA,ꢀRGS=50ꢀΩ
Gate source voltage
VGS
-20
20
V
-
-
-
-
-
556
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W3)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.27
40
Thermal resistance, junction - case4)
RthJC
-
-
-
-
°C/W -
°C/W -
°C/W -
Thermal resistance, junction -Ambient RthJA
Case-to-Sink, Flat Greased Surface RthCS
-
0.24
-
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
R
thJC
is measured at TJ approximately 90°C.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
V(BR)DSS
Unit Noteꢀ/ꢀTestꢀCondition
VGS=0ꢀV,ꢀID=1ꢀmA
mV/°CID=2ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
100
-
V
Breakdown voltage temperature
coefficient
dV(BR)DSSꢀ/dTj -
VGS(th) 2.2
IDSS
40
-
-
Gate threshold voltage
3.8
V
VDS=VGS,ꢀID=278ꢀµA
-
-
-
-
5
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
µA
nA
mΩ
IGSS
-
-
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.1
1.3
1.28
1.5
VGS=10ꢀV,ꢀID=100ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
Gate resistance1)
Transconductance
RG
gfs
-
-
0.6
-
-
Ω
-
350
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
24000 -
pF
pF
pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
3500
150
-
-
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG=2.7ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
50
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG=2.7ꢀΩ
110
170
120
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG=2.7ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG=2.7ꢀΩ
1) Defined by design. Not subject to production test.
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
100
71
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
-
65
-
Qsw
95
-
Gate charge total2)
Qg
330
4.3
412
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
-
-
-
265
411
nC
nC
VDD=50ꢀV,ꢀVGS=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
209
836
1.2
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
A
A
V
TC=25ꢀ°C
IS,pulse
VSD
TC=25ꢀ°C
Diode forward voltage
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=85ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs,ꢀ
Reverse recovery time2)
trr
-
-
110
280
-
-
ns
Tj=25 °C
VR=85ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs,ꢀ
Reverse recovery charge2)
Qrr
nC
Tj=25 °C
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
600
600
package limit
silicon limit
500
400
300
200
100
0
500
400
300
200
100
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
10 µs
single pulse
0.01
100 µs
0.02
0.05
0.1
0.2
0.5
100
1 ms
102
101
10-1
10-2
10-3
10-4
10-5
10 ms
DC
100
10-1
10-2
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
840
4.0
735
630
525
420
315
210
105
0
3.5
4.5 V
5 V
5.5 V
6 V
7 V
8 V
5 V
3.0
4.5 V
10 V
12 V
2.5
2.0
1.5
1.0
0.5
6 V
8 V
10 V
0
1
2
3
4
5
0
105
210
315
420
525
630
735
840
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
840
5
735
630
525
420
315
210
4
3
2
125 °C
1
25 °C
105
175 °C
25 °C
0
0
0
1
2
3
4
5
6
2
4
6
8
10
12
14
16
18
20
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.7
1.4
1.1
0.8
0.5
2780 µA
278 µA
-75
-25
25
75
125
175
-75
-25
25
75
125
175
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
175 °C
Ciss
104
103
102
101
102
101
100
10-1
Coss
Crss
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
14
20 V
50 V
80 V
12
102
101
100
10-1
25 °C
10
8
100 °C
150 °C
6
4
2
0
100
101
102
103
0
70
140
210
280
350
420
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
116
114
112
110
108
106
104
102
-75
-25
25
75
125
175
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-01-20
StrongIRFETª
IRF100P218
RevisionꢀHistory
IRF100P218
Revision:ꢀ2020-01-20,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.0
2.0
2.1
Release of preliminary version
2018-09-25
2018-10-16
2020-01-20
Release of final version
Update from IR MOSFT/StrongIRFETTM to StrongIRFETTM
Trademarks
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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-01-20
相关型号：
IRF1010ELTRL
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
INFINEON
IRF1010ELTRR
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
INFINEON
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