IPB017N10N5LF [INFINEON]
OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。;型号: | IPB017N10N5LF |
厂家: | Infineon |
描述: | OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。 栅 脉冲 晶体管 |
文件: | 总11页 (文件大小:1000K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPB017N10N5LF
MOSFET
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
D²-PAKꢀ7pin
Features
•ꢀIdealꢀforꢀhot-swapꢀandꢀe-fuseꢀapplications
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)
tab
•ꢀWideꢀsafeꢀoperatingꢀareaꢀSOA
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
1
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
7
Drain
Pin 4, tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
VDS
100
V
Gate
Pin 1
RDS(on),max
ID
1.7
mΩ
A
Source
Pin 2,3,5,6,7
256
Ipulseꢀ(VDS=56ꢀV,ꢀtp=10
ms)
10.2
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
017N10LF
RelatedꢀLinks
IPB017N10N5LF
PG-TO263-7
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
256
198
31
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTC=25ꢀ°C,ꢀRthJAꢀ=40ꢀK/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
-
-
1024
979
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
Power dissipation
Ptot
313
150
W
°C
TC=25ꢀ°C
Operating and storage temperature
Tj,ꢀTstg
-55
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.25
0.4
K/W
K/W
-
-
Device on PCB,
minimal footprint
-
-
-
-
62
40
Device on PCB,
RthJA
K/W
-
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.5
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.3
4.1
VDS=VGS,ꢀID=270ꢀµA
-
-
1
10
10
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
µA
µA
-
-
2
-2
5
-5
VGS=20ꢀV,ꢀVDS=0ꢀV
VGS=-10ꢀV,ꢀVDS=0ꢀV
Drain-source on-state resistance
Gate resistance1)
Transconductance1)
RDS(on)
RG
-
1.5
44
63
1.7
66
-
mΩ VGS=10ꢀV,ꢀID=100ꢀA
-
Ω
-
gfs
32
S
|VDS|>2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
650
840
pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
1900 2500 pF
Reverse transfer capacitance
25
7
-
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.7ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.7ꢀΩ
28
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.7ꢀΩ
Turn-off delay time
Fall time
128
82
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.7ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
4.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
nC
nC
nC
V
VDD=50ꢀV,ꢀID=180ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=180ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=180ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=180ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀVGS=0ꢀV
Qgd
141
-
Qg
195
-
Gate plateau voltage
Output charge1)
Vplateau
Qoss
7.1
-
209
278
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
206
1024
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.86
62
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
113
-
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
350
280
300
250
200
150
100
50
240
200
160
120
80
40
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
100
103
0.5
1 µs
10-1
10 µs
0.2
10 ms
100 µs
0.1
102
1 ms
0.05
10-2
DC
0.02
101
0.01
single pulse
100
10-1
10-3
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
120
2.00
1.75
100
8 V
10 V
1.50
10 V
80
1.25
1.00
0.75
0.50
0.25
0.00
60
8 V
6 V
40
5.5 V
20
0
5 V
4.5 V
4
0
1
2
3
5
0
20
40
60
80
100
120
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C,ꢀtp=30ꢀµs;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
70
180
160
140
120
100
80
60
50
40
30
20
10
0
25 °C
60
150 °C
40
20
0
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀVDS=10ꢀV;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.2
0.8
0.4
0.0
2700 µA
270 µA
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
104
25 °C
25 °C, max
150 °C
150 °C, max
Coss
103
102
101
100
103
Ciss
102
Crss
101
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
20V
8
6
4
2
0
80V
50V
102
25 °C
100 °C
125 °C
101
100
100
101
102
103
0
50
100
150
200
250
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=180ꢀAꢀpulsed,ꢀresistiveꢀload;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2022-09-09
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ100ꢀV
IPB017N10N5LF
RevisionꢀHistory
IPB017N10N5LF
Revision:ꢀ2022-09-09,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
Release of final version
2016-12-15
2017-02-16
2022-06-23
2022-09-09
Update technology heading
Update current rating, footnotes and skip "Operating and storage temperature" condition
Update Diagram 7
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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2022-09-09
相关型号:
IPB017N10N5LFATMA1
Power Field-Effect Transistor, 31A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
INFINEON
IPB018N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPB018N10N5
The IPB018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard D²PAK package for surface mount assembly. OptiMOS™ 5 power MOSFET in D²PAK targets light electric vehicles and battery management systems.
INFINEON
IPB019N06L3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机以及平板电脑充电器中的电源。此外,这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
IPB019N08N3GXT
Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
INFINEON
IPB019N08N5
与前几代产品相比,英飞凌OptiMOS™5 80V工业功率MOSFETIPB019N08N5,其R DS(on)降低了43%,非常适合高开关频率。该器件专为通信和服务器电源中的同步整流而设计。此外,它们还可以在其他工业应用中使用,例如太阳能、低压驱动器和适配器。
INFINEON
IPB020N08N5
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB020N10N5
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
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