IPB018N06NF2S [INFINEON]
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of applications from low- to high-switching frequency.;![IPB018N06NF2S](http://pdffile.icpdf.com/pdf2/p00370/img/icpdf/IPB018N06NF2_2257715_icpdf.jpg)
型号: | IPB018N06NF2S |
厂家: | ![]() |
描述: | Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of applications from low- to high-switching frequency. |
文件: | 总11页 (文件大小:1046K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPB018N06NF2S
MOSFET
StrongIRFETTM2ꢀPower-Transistor
D²PAK
Features
tab
•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
1
3
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
VDS
60
V
RDS(on),max
ID
1.8
mΩ
A
Source
Pin 3
187
108
108
Qoss
nC
nC
QGꢀ(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB018N06NF2S
PG-TO263-3
018N06NS
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
187
143
34
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=40ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
748
349
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
188
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.8
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.1
2.8
3.3
VDS=VGS,ꢀID=129ꢀµA
-
-
0.5
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.5
1.9
1.8
2.7
VGS=10ꢀV,ꢀID=100ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
2.7
-
-
-
Ω
-
105
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
7300
1550
63
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
22
31
48
17
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
33
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
20
-
20
-
Qsw
33
-
Gate charge total1)
Qg
108
4.6
162
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
-
-
-
100
108
nC
nC
VDS=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
145
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
748
A
TC=25ꢀ°C
Diode forward voltage
0.90
34
1
-
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
169
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
200
160
120
80
40
0
160
120
80
40
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
1 µs
0.02
0.05
100 µs 10 µs
102
101
0.1
0.2
0.5
100
10 ms
1 ms
10-1
10-2
10-3
DC
100
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
3.5
10 V
8 V
700
600
500
400
300
200
100
0
5 V
7 V
3.0
5.5 V
6 V
2.5
2.0
5.5 V
6 V
7 V
5 V
8 V
1.5
10 V
1.0
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
5.0
25 °C
700
600
500
400
300
200
100
0
4.5
4.0
3.5
3.0
175 °C
175 °C
2.5
2.0
1.5
1.0
25 °C
1
2
3
4
5
6
7
3
6
9
12
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
1.0
1290 µA
129 µA
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
Ciss
175 °C
Coss
103
102
101
102
101
100
Crss
0
10
20
30
40
50
60
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
12 V
30 V
48 V
9
8
7
6
5
4
3
2
1
0
102
25 °C
100 °C
101
150 °C
100
100
101
102
103
0
20
40
60
80
100
120
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
65
64
63
62
61
60
59
58
57
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO263-3-U02
MILLIMETERS
DIMENSIONS
MIN.
4.06
0.00
0.51
1.07
0.30
1.14
8.38
6.60
9.65
6.22
MAX.
4.83
0.25
1.00
1.78
0.73
1.65
9.65
7.50
10.67
8.70
A
A1
b
b1
c
c1
D
D1
E
E1
e
2.54
3
N
H
14.60
1.52
15.88
2.60
1.68
1.78
8.00°
L
L1
L2
THETA
1.05
1.35
-9.00°
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-10-19
StrongIRFETTM2ꢀPower-Transistor
IPB018N06NF2S
RevisionꢀHistory
IPB018N06NF2S
Revision:ꢀ2022-10-19,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-10-19
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-10-19
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/IPB018N10N5_2230236_files/IPB018N10N5_2230236_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/IPB018N10N5_2230236_files/IPB018N10N5_2230236_2.jpg)
IPB018N10N5
The IPB018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard D²PAK package for surface mount assembly. OptiMOS™ 5 power MOSFET in D²PAK targets light electric vehicles and battery management systems.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/IPB019N06L3-_2213787_files/IPB019N06L3-_2213787_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/IPB019N06L3-_2213787_files/IPB019N06L3-_2213787_2.jpg)
IPB019N06L3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机以及平板电脑充电器中的电源。此外,这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPB01_986767_files/IPB01_986767_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPB01_986767_files/IPB01_986767_2.jpg)
IPB019N08N3GXT
Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPB019N08N5_2228966_files/IPB019N08N5_2228966_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPB019N08N5_2228966_files/IPB019N08N5_2228966_2.jpg)
IPB019N08N5
与前几代产品相比,英飞凌OptiMOS™5 80V工业功率MOSFETIPB019N08N5,其R DS(on)降低了43%,非常适合高开关频率。该器件专为通信和服务器电源中的同步整流而设计。此外,它们还可以在其他工业应用中使用,例如太阳能、低压驱动器和适配器。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00288/img/page/IPB020N08N5_1750900_files/IPB020N08N5_1750900_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00288/img/page/IPB020N08N5_1750900_files/IPB020N08N5_1750900_2.jpg)
IPB020N08N5
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00276/img/page/IPB020N10N5_1651741_files/IPB020N10N5_1651741_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00276/img/page/IPB020N10N5_1651741_files/IPB020N10N5_1651741_2.jpg)
IPB020N10N5
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IPB020N10N5A_1383419_files/IPB020N10N5A_1383419_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IPB020N10N5A_1383419_files/IPB020N10N5A_1383419_2.jpg)
IPB020N10N5ATMA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IPB020N10N5L_2240448_files/IPB020N10N5L_2240448_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IPB020N10N5L_2240448_files/IPB020N10N5L_2240448_2.jpg)
IPB020N10N5LF
OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。
INFINEON
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