IPA60R099C7_15 [INFINEON]
Metal Oxide Semiconductor Field Effect Transistor;
| 型号： | IPA60R099C7_15 |
| 厂家： | 
Infineon |
| 描述： | Metal Oxide Semiconductor Field Effect Transistor |
| 文件： | 总15页 (文件大小：1139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC7
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
TO-220ꢀFP
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀC7ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
600VꢀCoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
Theꢀ600VꢀC7ꢀisꢀtheꢀfirstꢀtechnologyꢀeverꢀwithꢀRDS(on)*Aꢀbelowꢀ1Ohm*mm².
Features
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggednessꢀtoꢀ120V/ns
•ꢀIncreasedꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package
Drain
Pin 2
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 1
Source
Pin 3
Benefits
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe
application
•ꢀHigherꢀdv/dtꢀlimitꢀenablesꢀfasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency
•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀdueꢀtoꢀsmallerꢀpackages
•ꢀSuitableꢀforꢀapplicationsꢀsuchꢀasꢀserver,ꢀtelecomꢀandꢀsolar
•ꢀHigherꢀswitchingꢀfrequenciesꢀpossibleꢀwithoutꢀlossꢀinꢀefficiencyꢀdueꢀto
lowꢀEossꢀandꢀQg
Applications
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg.typ
Value
650
99
Unit
V
mΩ
nC
A
42
ID,pulse
83
ID,continuous @ Tj<150°C 36
A
Eoss@400V
4.95
360
µJ
Body diode di/dt
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA60R099C7
60C7099
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
12
8
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
83
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
97
mJ
mJ
A
ID=5A; VDD=50V; see table 10
-
0.49
5.0
120
20
ID=5A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
33
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
50
-
-
Operating junction temperature
Mounting torque
-
Ncm M2.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
12
A
A
TC=25°C
TC=25°C
IS,pulse
-
83
VDS=0...400V,ꢀISD<=7.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
20
V/ns
see table 8
VDS=0...400V,ꢀISD<=7.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
360
A/µs
see table 8
VISO
2500
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.79
80
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Typ.
-
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3.5
4
VDS=VGS,ꢀID=0.49mA
-
-
-
10
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C
VDS=600,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.085 0.099
0.190
VGS=10V,ꢀID=9.7A,ꢀTj=25°C
VGS=10V,ꢀID=9.7A,ꢀTj=150°C
RDS(on)
RG
-
-
0.82
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1819
33
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
63
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
641
11.8
8
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
54
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
4.5
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
14
Qg
42
Gate plateau voltage
Vplateau
5.0
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.9
-
V
VGS=0V,ꢀIF=9.7A,ꢀTj=25°C
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
350
4.4
27
-
-
-
ns
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
40
102
1 µs
10 µs
100 µs
1 ms
35
30
25
20
15
10
5
10 ms
101
DC
100
10-1
10-2
10-3
10-4
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
100 µs
1 ms
1 µs
10 µs
10 ms
101
0.5
DC
100
10-1
10-2
10-3
10-4
100
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
140
80
20 V
20 V
10 V
70
120
100
80
60
40
20
0
10 V
8 V
8 V
7 V
60
7 V
6 V
50
40
5.5 V
30
6 V
5 V
20
5.5 V
4.5 V
10
0
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.30
0.23
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
5.5 V
6 V
7 V
6.5 V
0.28
0.26
0.24
0.22
0.20
0.18
10 V
20 V
0.14
98%
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
typ
0
20
40
60
80
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=9.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
140
12
120 V
120
100
80
60
40
20
0
400 V
10
25 °C
8
6
4
2
0
150 °C
0
2
4
6
8
10
12
0
10
20
30
40
50
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=9.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
100
80
60
40
20
0
101
125 °C
25 °C
100
10-1
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.0ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
105
680
660
640
620
600
580
560
540
520
104
Ciss
103
102
Coss
101
100
Crss
10-1
-60
-30
0
30
60
90
120
150
0
100
200
300
400
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
6
5
4
3
2
1
0
0
100
200
300
400
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
7ꢀꢀꢀꢀꢀPackageꢀOutlines
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
MAX
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
MIN
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
DOCUMENT NO.
Z8B00003319
A
A1
A2
b
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
0
SCALE
b1
b2
b3
b4
c
2.5
0
2.5
5mm
D
15.67
8.97
EUROPEAN PROJECTION
D1
E
10.00
2.54 (BSC)
0.100 (BSC)
e
e1
N
5.08
3
0.200
3
H
28.70
12.78
2.83
29.75
13.75
3.45
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
24-10-2014
L
L1
¡3
Q
REVISION
2.95
3.38
05
3.15
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-08-10
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPA60R099C7
RevisionꢀHistory
IPA60R099C7
Revision:ꢀ2015-08-10,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-08-10
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2015-08-10
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