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IPA60R125P6 [INFINEON]

Metal Oxide Semiconductor Field Effect Transistor;
IPA60R125P6
型号： IPA60R125P6
厂家： Infineon    Infineon
描述：

Metal Oxide Semiconductor Field Effect Transistor
文件： 总18页 (文件大小：2794K)
中文：  中文翻译
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀP6  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPx60R125P6  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
TO-247  
TO-220  
TO-220ꢀFP  
1ꢀꢀꢀꢀꢀDescription  
tab  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe  
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET  
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction  
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,  
lighterꢀandꢀcooler.  
Drain  
Pin 2, Tab  
Features  
Gate  
Pin 1  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
Source  
Pin 3  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Applications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
125  
56  
Unit  
V
mΩ  
nC  
A
ID,pulse  
87  
Eoss@400V  
Body diode di/dt  
7.2  
µJ  
300  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
IPW60R125P6  
Package  
Marking  
RelatedꢀLinks  
PG-TO 247  
PG-TO 220  
IPP60R125P6  
6R125P6  
see Appendix A  
IPA60R125P6  
PG-TO 220 FullPAK  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
30.0  
19.0  
TC=25°C  
TC=100°C  
Continuous drain current 1)  
ID  
A
Pulsed drain current 2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
87  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
-
636  
0.96  
5.2  
100  
20  
mJ  
mJ  
A
ID=5.2A; VDD=50V; see table 10  
EAR  
-
ID=5.2A; VDD=50V; see table 10  
-
IAR  
-
dv/dt  
VGS  
VGS  
-
V/ns VDS=0...400V  
-20  
-30  
V
V
static;  
30  
AC (f>1 Hz)  
Power dissipation (Non FullPAK)  
TO-220, TO-247  
Ptot  
Ptot  
-
-
-
-
219  
34  
W
W
TC=25°C  
TC=25°C  
Power dissipation (FullPAK)  
TO-220FP  
Storage temperature  
Tstg  
Tj  
-55  
-55  
-
-
150  
150  
°C  
°C  
-
-
Operating junction temperature  
Mounting torque (Non FullPAK)  
TO-220, TO-247  
-
-
-
-
-
-
60  
50  
Ncm M3 and M3.5 screws  
Ncm M2.5 screws  
Mounting torque (FullPAK)  
TO-220FP  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
-
-
-
26.0  
87  
A
A
TC=25°C  
IS,pulse  
TC=25°C  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt 3)  
dv/dt  
dif/dt  
VISO  
-
-
-
-
-
-
15  
V/ns  
A/µs  
V
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
300  
2500  
Insulation withstand voltage for  
TO-220FP  
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max. Maximum duty cycle D=0.75  
2) Pulse width tp limited by Tj,max  
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-220,ꢀTO-247  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.57  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
3.65  
80  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=0.96mA  
-
-
-
10  
2
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.113 0.125  
0.293  
VGS=10V,ꢀID=11.6A,ꢀTj=25°C  
VGS=10V,ꢀID=11.6A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1.7  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
2660  
110  
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
Effective output capacitance,  
energy related 1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
90  
398  
14  
9
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance,  
time related 2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=14.5A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=14.5A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=14.5A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
44  
5
VDD=400V,ꢀVGS=13ꢀV,ꢀID=14.5A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
16  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=14.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=14.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=14.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=14.5A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
20  
Qg  
56  
Gate plateau voltage  
Vplateau  
6.1  
ꢀ1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
ꢀ2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=14.5A,ꢀTj=25°C  
VR=400V,ꢀIF=14.5A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
385  
7
-
-
-
ns  
VR=400V,ꢀIF=14.5A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=14.5A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
32  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)  
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)  
250  
40  
35  
30  
25  
20  
15  
10  
5
200  
150  
100  
50  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
Ptot=f(TC)  
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)  
101  
101  
0.5  
100  
100  
0.2  
0.1  
0.5  
0.05  
0.2  
0.1  
0.02  
0.01  
10-1  
10-1  
0.05  
0.02  
0.01  
single pulse  
single pulse  
10-4  
10-2  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
10-5  
10-3  
10-2  
10-1  
100  
101  
tpꢀ[s]  
tpꢀ[s]  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
103  
103  
1 µs  
102  
1 µs  
10 µs  
100 µs  
102  
101  
10 µs  
100 µs  
101  
1 ms  
1 ms  
10 ms  
100  
10-1  
10-2  
10-3  
10-4  
10 ms  
100  
10-1  
10-2  
10-3  
DC  
DC  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
102  
102  
1 µs  
1 µs  
10 µs  
100 µs  
10 µs  
100 µs  
101  
101  
100  
1 ms  
10 ms  
1 ms  
10 ms  
100  
10-1  
10-2  
10-3  
10-4  
DC  
10-1  
10-2  
10-3  
DC  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics  
90  
55  
20 V  
20 V  
10 V  
8 V  
10 V  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
8 V  
7 V  
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance  
0.55  
0.30  
0.50  
0.45  
0.25  
0.20  
5.5 V  
6.5 V  
0.40  
0.35  
0.30  
0.25  
0.20  
6 V  
7 V  
10 V  
20 V  
98%  
typ  
0.15  
0.10  
0.05  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=11.6ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
100  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
9
8
25 °C  
120 V  
480 V  
7
6
5
4
3
2
1
0
150 °C  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=14.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ16:ꢀAvalancheꢀenergy  
102  
700  
600  
500  
400  
300  
200  
100  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=5.2ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ18:ꢀTyp.ꢀcapacitances  
700  
104  
Ciss  
680  
660  
640  
620  
600  
580  
560  
540  
520  
103  
Coss  
102  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy  
10  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
Rg1  
VDS(peak)  
VDS  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VD  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
16  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
17  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6  
RevisionꢀHistory  
IPW60R125P6, IPP60R125P6, IPA60R125P6  
Revision:ꢀ2014-03-07,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2014-03-07  
WeꢀListenꢀtoꢀYourꢀComments  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
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Final Data Sheet  
18  
Rev.ꢀ2.0,ꢀꢀ2014-03-07  

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