IPA60R125C6 [INFINEON]

Metal Oxide Semiconductor Field Effect Transistor; 金属氧化物半导体场效应晶体管


型号：	IPA60R125C6
厂家：	Infineon
描述：	Metal Oxide Semiconductor Field Effect Transistor 金属氧化物半导体场效应晶体管晶体半导体晶体管场效应晶体管
文件：	总18页 (文件大小：2076K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS C6

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Data Sheet

Rev. 2.1, 2010-02-09

Final

Industrial & Multimarket

600V CoolMOS™ C6 Power Transistor

IPA60R125C6, IPB60R125C6

IPP60R125C6 IPW60R125C6

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS™ C6 series

combines the experience of the leading SJ MOSFET supplier with

high class innovation. The offered devices provide all benefits of a

fast switching SJ MOSFET while not sacrificing ease of use.

Extremely low switching and conduction losses make switching

applications even more efficient, more compact, lighter, and cooler.

Features

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

JEDEC¹⁾qualified, Pb-free plating, Halogen free

drain

pin 2

gate

pin 1

Applications

source

pin 3

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom, UPS and Solar.

Please note: For MOSFET paralleling the use of ferrite beads on

the gate or separate totem poles is generally recommended.

Table 1

Key Performance Parameters

Parameter

Value

650

0.125

Unit

_DS@ T_j,max

R_DS(on),max



Q_g,typ

I_D,pulse

_oss@ 400V

7.6

µJ

A/µs

Body diode di/dt

500

Type / Ordering Code

IPW60R125C6

IPB60R125C6

Package

Marking

Related Links

PG-TO247

PG-TO263

PG-TO220

IFX C6 Product Brief

IFX C6 Portfolio

6R125C6

IPP60R125C6

IFX CoolMOS Webpage

IFX Design tools

IPA60R125C6

PG-TO220 FullPAK

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Min. Typ. Max.

Unit Note / Test Condition

Continuous drain current¹⁾

I_D

T_C= 25 °C

T_C= 100°C

T_C=25 °C

Pulsed drain current²⁾

I_D,pulse

E_AS

Avalanche energy, single pulse

636

I_D=5.2 A,V_DD=50 V

(see table 21)

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

E_AR

I_AR

0.96

5.2

I_D=5.2 A,V_DD=50 V

dv/dt

V_GS

V/ns V_DS=0...480 V

-20

-30

static

AC (f>1 Hz)

T_C=25 °C

Power dissipation for

TO-220, TO-247, TO-263

P_tot

219

Power dissipation for

TO-220 FullPAK

Operating and storage temperature T_j,T_stg

-55

150

°C

Mounting torque

TO-220, TO-247

Ncm M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

M2.5 screws

Continuous diode forward current

Diode pulse current²⁾

Reverse diode dv/dt³⁾

I_S

T_C=25 °C

I_S,pulse

dv/dt

V/ns V_DS=0...400 V, I_SD I_D,

T_j=25 °C

Maximum diode commutation

speed³⁾

di_f/dt

500

A/µs (see table 22)

1) Limited by T_j,max.Maximum duty cycle D=0.75

2) Pulse width t_plimited by T_j,max

3) Identical low side and high side switch with identical R_G

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Thermal characteristics

Table 3

Thermal characteristics TO-220 (IPP60R125C6),TO-247 (IPW60R125C6)

Parameter

Symbol

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

0.57

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 4

Thermal characteristics TO-220FullPAK (IPA60R125C6)

Symbol Values

Typ.

Parameter

Unit

Note /

Test Condition

Min.

Max.

3.65

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 5

Thermal characteristics TO-263 (IPB60R125C6)

Symbol Values

Parameter

Unit

Note /

Test Condition

Min.

Typ.

Max.

0.57

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

SMD version, device

on PCB, minimal

footprint

SMD version, device

on PCB, 6cm²cooling

area¹⁾

Soldering temperature,

T_sold

260

°C

reflow MSL1

wave- & reflow soldering allowed

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm²copper area (thickness 70µm) for drain connection.

PCB is vertical without air stream cooling.

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 6

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

600

2.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=0.25 mA

V_DS=V_GS, I_D=0.96 mA

Gate threshold voltage

V_GS(th)

I_DSS

3.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.11

0.125



V_GS=10 V, I_D=14.5 A,

T_j=25 °C

0.29

3.7

V_GS=10 V, I_D=14.5 A,

T_j=150 °C

Gate resistance

R_G



f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

2127

125

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

400

I_D=constant, V_GS=0 V

V_DS=0...480V

related²⁾

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD=400 V,

V_GS=13 V, I_D=14.5 A,

R_G= 1.7

Turn-off delay time

Fall time

(see table 20)

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics

Table 8

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

5.4

V_DD=480 V,

I_D=14.5 A,

V_GS=0 to 10 V

Q_gd

Q_g

Gate plateau voltage

V_plateau

Table 9

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=14.5 A,

T_j=25 °C

Reverse recovery time

t_rr

510

µC

V_R=400 V, I_F=14.5 A,

di_F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics diagrams

Table 10

Power dissipation

TO-220, TO-247, TO-263

TO-220 FullPAK

P_tot= f(T_C)

Table 11

Max. transient thermal impedance

TO-220, TO-247, TO-263

Max. transient thermal impedance

TO-220 FullPAK

_(thJC)=f(tp); parameter: D=t_p/T

Z_(thJC)=f(tp); parameter: D=t_p/T

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics diagrams

Table 12

Safe operating area T_C=25 °C

TO-220, TO-247, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=25 °C; D=0; parameter t_p

Table 13

Safe operating area T_C=80 °C

TO-220, TO-247, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=80 °C; D=0; parameter t_p

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics diagrams

Table 14

Typ. output characteristics T_j=25 °C

Typ. output characteristics T_j=125 °C

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

I_D=f(V_DS); T_j=125 °C; parameter: V_GS

Table 15

Typ. drain-source on-state resistance

Drain-source on-state resistance

_DS(on)=f(I_D); T_j=125 °C; parameter: V_GS

R_DS(on)=f(T_j); I_D=14.5 A; V_GS=10 V

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics diagrams

Table 16

Typ. transfer characteristics

Typ. gate charge

I_D=f(V_GS); V_DS=20V

_GS=f(Q_gate), I_D=14.5 A pulsed

Table 17

Avalanche energy

Drain-source breakdown voltage

E_AS=f(T_j); I_D=5.2 A; V_DD=50 V

V_BR(DSS)=f(T_j); I_D=0.25 mA

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Electrical characteristics diagrams

Table 18

Typ. capacitances

Typ. C_ossstored energy

C=f(V_DS); V_GS=0 V; f=1 MHz

E_OSS=f(V_DS)

Table 19

Forward characteristics of reverse diode

I_F=f(V_SD); parameter: T_j

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Test circuits

Table 20

Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load

Switching time waveform

V_DS

90%

V_DS

V_GS

10%

V_GS

t_{d( off)}

t_d(on)

t_on

t_f

t_r

t_off

Table 21

Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Table 22

Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

I_D

di_F/dt

t_rr

Q_rr

t_S

Q_S

t_rr

t_F

R_G1

Q_F

t_F

Ι_F

t_S

V_DS

10% Ι_RRM

di_rr/dt

R_G2

Q_S

Q_F

Ι_RRM

RRM

90% Ι_RRM

R_G1= R_G2

SIL00088

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Package outlines

TO247-3-21/-41/-44

MILLIMETERS

INCHES

MAX

DIM

MIN

4.83

2.27

1.85

1.07

1.90

2.87

0.55

20.80

16.25

0.95

15.70

13.10

3.68

1.00

MAX

5.21

2.54

2.16

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.35

16.13

14.15

5.10

2.60

MIN

0.190

0.089

0.073

0.042

0.075

0.113

0.022

0.819

0.640

0.037

0.618

0.516

0.145

0.039

0.205

0.100

0.085

0.052

0.095

0.085

0.133

0.123

0.027

0.831

0.695

0.053

0.635

0.557

0.201

0.102

DOCUMENT NO.

Z8B00003327

SCALE

7.5mm

EUROPEAN PROJECTION

5.44 (BSC)

0.214 (BSC)

øP

ISSUE DATE

09-07-2010

19.80

4.10

3.50

5.49

6.04

20.32

4.47

3.70

6.00

6.30

0.780

0.161

0.138

0.216

0.238

0.800

0.176

0.146

0.236

0.248

REVISION

Figure 1

Outlines TO-247, dimensions in mm/inches

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Package outlines

Figure 2

Outlines TO-220, dimensions in mm/inches

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Package outlines

Figure 3

Outlines TO-220 FullPAK, dimensions in mm/inches

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Package outlines

Figure 4

Outlines TO-263, dimensions in mm/inches

Final Data Sheet

Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R125C6

Revision History

CoolMOS C6 600V CoolMOS™ C6 Power Transistor

Revision History: 2010-02-09, Rev. 2.1

Previous Revision:

Revision Subjects (major changes since last revision)

2.0

2.1

Release of final data sheet

New package outlines TO-247

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2010-02-09

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

Final Data Sheet

Rev. 2.1, 2010-02-09

IPA60R125C6 [INFINEON]

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