IAUA120N04S5N014 [INFINEON]
车规级MOSFET;
Infineon 
IAUA120N04S5N014
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
PG-HSOF-5-2
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
40
1.4
120
V
RDS(on),max
ID (chip limited)
mΩ
A
Type
Package
Marking
IAUA120N04S5N014
PG-HSOF-5-2
5N04N014
Data Sheet
www.infineon.com/mosfets
Please read the Important Notice and Warnings at the end of this document
Rev. 1.1
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
#VALUE!
Rev. 1.1
2022-01-24
2
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
T C = 25 °C, V GS = 10 V1)
T C = 100 °C, V GS = 10 V2)
T C = 25 °C
I D
120
120
480
A
Continuous drain current
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
E AS
I D = 60 A
190
120
mJ
A
I AS
–
V GS
±20
V
–
P tot
T j, T stg
T C = 25 °C
136
W
°C
Power dissipation
-55 ... +175
Operating and storage temperature
–
#VALUE!
Rev. 1.1
3
Data Sheet
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
–
–
1.10 K/W
Thermal resistance,
junction - ambient
6 cm² cooling area3)
–
–
60
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS = 0 V,
I D = 1 mA
V (BR)DSS
V GS(th)
I DSS
40
2.2
–
–
2.8
–
–
3.4
1
V
V DS = V GS, I D = 60 µA
V DS = 40 V, V GS = 0 V,
T j = 25 °C
Zero gate voltage drain current
µA
V DS = 40 V, V GS = 0 V,
T j = 125 °C2)
–
–
100
I GSS
V GS = 20 V, V DS = 0 V
V GS = 7 V, I D = 60 A
V GS = 10 V, I D = 60 A
Gate-source leakage current
–
–
–
–
100 nA
1.60 mΩ
1.40
R DS(on)
Drain-source on-state resistance
1.50
1.20
Rev. 1.1
2022-01-24
4
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
3630
990
46
7
4828 pF
1317
V GS = 0 V, V DS = 25 V,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
69
–
–
–
–
ns
4
V DD = 20 V, V GS = 10 V,
I D = 120 A, R G = 3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
14
7
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
16
13
62
4.6
21
20
82
–
nC
V
Q gd
Gate to drain charge
Gate charge total
V DD = 32 V, I D = 120 A,
V GS = 0 to 10 V
Q g
V plateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
I S
–
–
–
–
120
480
A
V
T C = 25 °C
Diode pulse current2)
I S,pulse
V GS = 0 V, I F = 60 A,
T j = 25 °C
V SD
Diode forward voltage
–
0.8
1.1
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
45
41
–
–
ns
V R = 20 V, I F = 50 A,
di F/dt = 100 A/µs
Q rr
nC
1) Current is limited by package; with a Rthjc = 1.1 K/W the chip is able to carry 230 A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
2022-01-24
5
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Electrical characteristics diagrams
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 10 V
I D = f(T C); V GS ≥ 10 V
140
120
100
80
140
120
100
80
60
60
40
40
20
20
0
0
0
0
50
100
150
200
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
101
1000
1 µs
10 µs
100
100 µs
100
10
1
0.5
150 µs
10-1
0.1
0.05
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.1
2022-01-24
#VALUE!
6
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; parameter: VGS
500
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
5
5.5 V
7 V
10 V
460
420
380
340
300
4.5 V
5 V
4
5.5 V
3
260
5 V
220
180
140
2
7 V
10 V
100
4.5 V
1
60
20
-20
0
0
1
2
3
0
100
200
ID [A]
300
400
VGS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); I D = 20 A, V GS = 10 V
3
480
440
400
360
320
280
240
200
160
120
2
1
0
175 °C
80
-55 °C
40
25 °C
0
3
4
5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.1
2022-01-24
7
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
9 Typ. gate threshold voltage
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
V GS(th) = f(T j); V GS = V DS; parameter: I D
4
Ciss
3.5
Coss
3
600 µA
103
102
101
2.5
60 µA
2
1.5
1
Crss
0.5
0
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV); parameter: T j(start)
1000
I F = f(V SD ); parameter: T j
103
102
100
25 °C
100 °C
25 °C
175 °C
150 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.1
2022-01-24
8
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
13 Typical avalanche energy
E AS = f(T j); parameter: ID
400
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D_typ = 1 mA
46
44
42
40
38
36
30 A
300
200
60 A
100
120 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 40 A pulsed; parameter: V DD
10
V GS
8 V
9
Q g
32 V
8
7
6
5
4
3
2
1
0
V gs(th)
Q g(th)
Q sw
Q gate
Q gd
Q gs
0
10
20
30
40
50
60
70
80
Qgate [nC]
Rev. 1.1
2022-01-24
9
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Package Outline
Footprint
Packaging
Rev. 1.1
2022-01-24
10
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA120N04S5N014
Revision History
Revision
Date
Changes
Revision 1.0
Revision 1.1
11.04.2019
24.01.2022
Final Data Sheet
Editorial changes, package drawing added
Rev. 1.1
2022-01-24
11
Data Sheet
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-01-24
Published by
IMPORTANT NOTICE
The information given in this document shall in no event be For further information on technology, delivery
regarded as
a guarantee of conditions or characteristics terms and conditions and prices, please contact
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
the nearest Infineon Technologies Office
(www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of
any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact the nearest
Infineon Technologies Office.
In addition, any information given in this document is subject to
customer's compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer's products and any use of the product of
Do you have any questions about any
aspect of this document?
Except as otherwise explicitly approved by
Infineon Technologies in
a written document
Email: erratum@infineon.com
signed by authorized representatives of Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result
in personal injury.
Infineon
Technologies
in
customer's
applications.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for
the intended application and the completeness of the product
information given in this document with respect to such
application.
相关型号：
IAUA170N10S5N031
The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like HVAC Compressors, Pumps, Fans and Safety Switches.
INFINEON
IAUA250N08S5N018
The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED Lighting as well as 48V Auxiliaries like HVAC Compressors and Safety Switches.
INFINEON
IAUC100N04S6L014
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
INFINEON
IAUC100N04S6N028
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
INFINEON
IAUC100N08S5N034
The IAUC100N08S5N034 is a 3.4mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in 48V auxiliaries, DCDC converter as well as power distribution.
INFINEON
©2020 ICPDF网 联系我们和版权申明