IAUA180N04S5N012 [INFINEON]
车规级MOSFET;
| 型号： | IAUA180N04S5N012 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总12页 (文件大小：763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUA180N04S5N012
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
PG-HSOF-5-2
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
40
V
RDS(on),max
ID (chip limited)
1.16
180
mΩ
A
Type
Package
Marking
IAUA180N04S5N012
PG-HSOF-5-2
5N04N012
Data Sheet
www.infineon.com/mosfets
Please read the Important Notice and Warnings at the end of this document
Rev. 1.2
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
#VALUE!
Rev. 1.2
2022-01-24
2
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
T C = 25 °C, V GS = 10 V1)
T C = 100 °C, V GS = 10 V2)
T C = 25 °C
I D
180
180
720
A
Continuous drain current
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
E AS
I D = 90 A
175
180
mJ
A
I AS
–
V GS
±20
V
–
P tot
T j, T stg
T C = 25 °C
125
W
°C
Power dissipation
-55 ... +175
Operating and storage temperature
–
#VALUE!
Rev. 1.2
3
Data Sheet
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
–
–
1.00 K/W
Thermal resistance,
junction - ambient
6 cm² cooling area3)
–
–
60
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS = 0 V,
I D = 1 mA
V (BR)DSS
V GS(th)
I DSS
40
2.2
–
–
2.8
–
–
3.4
1
V
V DS = V GS, I D = 70 µA
V DS = 40 V, V GS = 0 V,
T j = 25 °C
Zero gate voltage drain current
µA
V DS = 40 V, V GS = 0 V,
T j = 125 °C2)
–
–
100
I GSS
V GS = 20 V, V DS = 0 V
V GS = 7 V, I D = 90 A
V GS = 10 V, I D = 90 A
Gate-source leakage current
–
–
–
–
100 nA
1.40 mΩ
1.16
R DS(on)
Drain-source on-state resistance
1.20
1.00
Rev. 1.2
2022-01-24
4
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
4630
1230
56
6158 pF
1636
V GS = 0 V, V DS = 25 V,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
84
9
–
–
–
–
ns
5
V DD = 20 V, V GS = 10 V,
I D = 180 A, R G = 3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
19
10
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
21
16
75
4.7
28
24
100
–
nC
V
Q gd
Gate to drain charge
Gate charge total
V DD = 32 V, I D = 180 A,
V GS = 0 to 10 V
Q g
V plateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
I S
–
–
–
–
180
720
A
V
T C = 25 °C
Diode pulse current2)
I S,pulse
V GS = 0 V, I F = 90 A,
T j = 25 °C
V SD
Diode forward voltage
–
0.8
1.1
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
50
50
–
–
ns
V R = 20 V, I F = 50 A,
di F/dt = 100 A/µs
Q rr
nC
1) Current is limited by package; with a Rthjc = 1.0 K/W the chip is able to carry 260 A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.2
2022-01-24
5
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Electrical characteristics diagrams
1 Power dissipation
P tot = f(T C); V GS ≥ 10 V
200
2 Drain current
I D = f(T C); V GS ≥ 10 V
200
150
100
50
150
100
50
0
0
0
0
50
100
150
200
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
101
1000
1 µs
10 µs
100
100 µs
100
10
1
0.5
150 µs
10-1
0.1
0.05
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.2
2022-01-24
#VALUE!
6
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; parameter: VGS
720
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
5
680
10 V
4.5 V
7 V
5 V
640
600
4
3
5.5 V
560
520
480
440
400
360
320
5.5 V
5 V
2
280
240
200
160
120
7 V
10 V
1
0
4.5 V
80
40
0
0
1
2
3
0
100
200
300
400
500
600
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A, V GS = 10 V
2.5
I D = f(V GS); V DS = 6V: parameter: Tj
720
680
640
600
560
520
480
440
400
360
320
280
240
200
2
1.5
1
175 °C
160
0.5
0
120
80
-55 °C
25 °C
40
0
3
4
5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.2
2022-01-24
7
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
9 Typ. gate threshold voltage
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
V GS(th) = f(T j); V GS = V DS; parameter: I D
4
Ciss
3.5
Coss
3
700 µA
103
102
101
2.5
70 µA
2
1.5
1
Crss
0.5
0
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV); parameter: T j(start)
1000
I F = f(V SD ); parameter: T j
103
102
100
25 °C
175 °C
100 °C
25 °C
150 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.2
2022-01-24
8
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
13 Typical avalanche energy
E AS = f(T j); parameter: ID
400
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D_typ = 1 mA
46
44
42
40
38
36
45 A
300
200
90 A
100
180 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 40 A pulsed; parameter: V DD
10
V GS
9
8 V
Q g
32 V
8
7
6
5
4
3
2
1
0
V gs(th)
Q g(th)
Q sw
Q gate
Q gd
Q gs
0
10
20
30
40
50
60
70
80
Qgate [nC]
Rev. 1.2
2022-01-24
9
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Package Outline
Footprint
Packaging
Rev. 1.2
2022-01-24
10
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA180N04S5N012
Revision History
Revision
Date
Changes
Revision 1.0
Revision 1.1
Revision 1.2
11.04.2019
14.04.2021
24.01.2022
Final Data Sheet
RDS(on) improved
Editorial changes, package drawing added
Rev. 1.2
2022-01-24
11
Data Sheet
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-01-24
Published by
IMPORTANT NOTICE
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regarded as
a guarantee of conditions or characteristics terms and conditions and prices, please contact
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
the nearest Infineon Technologies Office
(www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of
any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
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contain dangerous substances. For information on
the types in question please contact the nearest
Infineon Technologies Office.
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customer's compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer's products and any use of the product of
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Email: erratum@infineon.com
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may not be used in any applications where a
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The data contained in this document is exclusively intended for
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