HFA100MD60DPBF [INFINEON]

Rectifier Diode, 1 Phase, 2 Element, 100A, Silicon, TO-244AB,;
HFA100MD60DPBF
型号: HFA100MD60DPBF
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 2 Element, 100A, Silicon, TO-244AB,

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PD-2.507 rev. A 12/98  
HFA100MD60D  
HEXFREDTM  
Ultrafast, Soft Recovery Diode  
VR = 600V  
Features  
Anode  
1
AC Cathode  
VF(typ.)ƒ = 1.1V  
IF(AV) = 100A  
2
• Reduced RFI and EMI  
• Reduced Snubbing  
• Extensive Characterization of  
Recovery Parameters  
Qrr (typ.) = 300nC  
IRRM(typ.) = 8A  
trr(typ.)= 33ns  
Isolated Base  
di(rec)M/dt (typ.)ƒ = 240A/µs  
Description  
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency  
power conditioning systems. An extensive characterization of the recovery  
behavior for different values of current, temperature and di/dt simplifies the  
calculations of losses in the operating conditions. The softness of the recovery  
eliminates the need for a snubber in most applications. These devices are ideally  
suited for power converters, motors drives and other applications where  
switching losses are significant portion of the total losses.  
TO-244AB  
(ISOLATED)  
Absolute Maximum Ratings (per Leg)  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
Continuous Forward Current  
Continuous Forward Current  
Single Pulse Forward Current   
Non-Repetitive Avalanche Energy ‚  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
600  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
83  
40  
A
400  
220  
180  
71  
EAS  
µJ  
W
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
-55 to +150  
C
TSTG  
Storage Temperature Range  
Thermal - Mechanical Characteristics  
Parameter  
Min.  
––––  
Typ.  
––––  
––––  
0.10  
Max.  
0.70  
Units  
RthJC  
Junction-to-Case, Single Leg Conducting  
Junction-to-Case, Both Legs Conducting  
Case-to-Sink, Flat , Greased Surface  
Weight  
°C/W  
K/W  
––––  
0.35  
RthCS  
Wt  
––––  
––––  
––––  
40 (4.6)  
40 (4.6)  
80  
––––  
79 (2.8)  
––––  
––––  
––––  
––––  
g (oz)  
Mounting Torque „  
30 (3.4)  
30 (3.4)  
––––  
lbf•in  
(N•m)  
TerminalTorque  
Vertical Pull  
lbf•in  
2 inch Lever Pull  
––––  
35  
Note:  Limited by junction temperature  
‚ L = 100µH, duty cycle limited by max TJ  
ƒ 125°C  
„
Mounting surface must be smooth, flat, free or burrs or other  
protrusions. Apply a thin even film or thermal grease to mounting  
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps  
until desired or maximum torque limits are reached. Module  
1
HFA100MD60D  
PD-2.507 rev. A 12/98  
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
VBR  
VFM  
Cathode Anode Breakdown Voltage  
Max Forward Voltage  
600 ––– –––  
––– 1.2 1.4  
––– 1.4 1.6  
––– 1.1 1.3  
––– 4.0 20  
––– 1.0 4.0  
––– 140 250  
V
IR = 100µA  
IF = 50A  
See Fig. 1  
V
IF = 100A  
IF = 50A, TJ = 125°C  
IRM  
Max Reverse Leakage Current  
µA VR = VR Rated  
See Fig. 2  
See Fig. 3  
mA TJ = 125°C, VR = 480V  
pF  
CT  
LS  
Junction Capacitance  
Series Inductance  
VR = 200V  
From top of terminal hole to mounting  
plane  
––– 7.0 –––  
nH  
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
trr  
Reverse Recovery Time  
––– 33 –––  
IF = 1.0A, di /dt = 200A/µs, VR = 30V  
f
trr1  
––– 76 115  
––– 130 200  
––– 8.0 15  
ns TJ = 25°C  
See  
trr2  
TJ = 125°C Fig. 5  
TJ = 25°C See  
TJ = 125°C Fig. 6  
TJ = 25°C See  
TJ = 125°C Fig. 7  
TJ = 25°C See  
TJ = 125°C Fig. 8  
IF = 50A  
IRRM1  
IRRM2  
Qrr1  
Qrr2  
Peak Recovery Current  
A
––– 12  
22  
VR = 200V  
Reverse Recovery Charge  
––– 300 900  
––– 780 2200  
––– 340 –––  
––– 240 –––  
nC  
di /dt = 200A/µs  
f
di(rec)M/dt1 Peak Rate of Fall of Recovery Current  
di(rec)M/dt2 During tb  
A/µs  
80.01 (3.150)  
40.26 (1.585)  
39.75 (1.565)  
20.32 (0.800)  
17.78 (0.700)  
LEAD ASSIGNMENTS  
1 - ANODE  
2 - CATHODE  
3 - ANODE  
7.49 (0.295)  
6.99 (0.275)  
(2 PLCS.)  
DIA.  
34.925 (1.375)  
REF.  
63.50 (2.500)  
60.96 (2.400)  
1/4-20 SLOTTED HEX  
1
2
3
OUTLINE TO-244AB (ISOLATED)  
Dimensions in Millimeters and (Inches)  
23.55 (0.927)  
20.42 (0.804)  
15.75 (0.620)  
14.99 (0.590)  
3.35 (0.132)  
3.02 (0.119)  
92.71 (3.650)  
90.17 (3.550)  
2
HFA100MD60D  
PD-2.507 rev. A 12/98  
10000  
1000  
100  
10  
1000  
100  
10  
T = 150°C  
J
T = 125°C  
J
1
T = 25°C  
J
T = 150°C  
J
0.1  
T = 125°C  
J
0
200  
400  
600  
T = 25°C  
J
Reverse Voltage - V (V)  
R
Fig. 2 - Typical Reverse Current vs. Reverse  
Voltage, (per Leg)  
A
10000  
1000  
100  
10  
T = 25°C  
J
1
0.0  
1.0  
2.0  
3.0  
Forward Voltage Drop - V  
(V)  
FM  
Fig. 1 - Maximum Forward Voltage Drop  
vs. Instantaneous Forward Current,  
(per Leg)  
1
10  
100  
1000  
Reverse Voltage - V (V)  
R
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage, (per Leg)  
1
D = 0.50  
D = 0.33  
D = 0.25  
P
D = 0.17  
DM  
0.1  
D = 0.08  
t
1
t
2
Single Pulse  
0.01  
Notes:  
1. Duty factor D = t / t  
(Thermal Resistance)  
1
2
2. Peak T = P  
J
x Z  
+ T  
DM  
thJC  
C
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t1, Rectangular Pulse Duration (Seconds)  
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg)  
3
HFA100MD60D  
PD-2.507 rev. A 12/98  
100  
10  
1
200  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 100A  
F
160  
120  
I
= 50A  
F
I
= 30A  
F
I
= 100A  
= 50A  
F
I
F
I
= 30A  
F
80  
40  
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 6 - Typical Recovery Current vs. dif/dt,  
Fig. 5 - Typical Reverse Recovery vs. dif/dt,  
(per Leg)  
(per Leg)  
3000  
10000  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
2000  
I
= 100A  
F
I
= 140A  
F
1000  
I
= 50A  
I = 70A  
F
F
I
= 30A  
I = 30A  
F
F
1000  
0
100  
100  
100  
1000  
1000  
di /dt - (A/µs)  
di /dt - (A/µs)  
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt,  
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,  
(per Leg)  
(per Leg)  
4
HFA100MD60D  
PD-2.507 rev. A 12/98  
3
t
rr  
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT  
4
Q
rr  
V
= 200V  
2
R
I
0.5 I  
RRM  
RRM  
5
di(rec)M/dt  
0.01  
0.75 I  
RRM  
L = 70µH  
1
di /dt  
f
D.U.T.  
1. dif/dt - Rate of change of current  
through zero crossing  
4. Qrr - Area under curve defined by trr  
D
and IRRM  
dif/dt  
ADJUST  
trr X IRRM  
IRFP250  
G
2. IRRM - Peak reverse recovery current  
Q =  
rr  
2
3. trr - Reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current  
S
5. di(rec)M/dt - Peak rate of change of  
current during tb portion of t  
rr  
Fig. 10 - Reverse Recovery Waveform and  
Fig. 9 - Reverse Recovery Parameter Test  
Definitions  
Circuit  
I
L = 100µH  
L(PK)  
HIGH-SPEED  
SWITCH  
DUT  
FREE-WHEEL  
DIODE  
Rg = 25 ohm  
+
CURRENT  
MONITOR  
DECAY  
TIME  
Vd = 50V  
V
(AVAL)  
V
R(RATED)  
Fig. 11 - Avalanche Test Circuit and Waveforms  
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
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http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice.  
5

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