HFA105NH60R [INFINEON]
HEXFRED⑩ Ultrafast, Soft Recovery Diode; HEXFRED⑩超快，软恢复二极管
| 型号： | HFA105NH60R |
| 厂家： | 
Infineon |
| 描述： | HEXFRED⑩ Ultrafast, Soft Recovery Diode |
| 文件： | 总5页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD-2.443
HFA105NH60R
Ultrafast, Soft Recovery Diode
HEXFREDTM
LUG
TERMINAL
CATHODE
VR = 600V
VF = 1.5V
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
a
d
Qrr * = 1200nC
di(rec)M/dt * = 240A/µs
BASE ANODE
* 125°C
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
HALF-PAK
Absolute Maximum Ratings
Parameter
Cathode-to-Anode Voltage
Max.
600
147
72
Units
V
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
A
600
2.0
IAS
EAS
220
379
152
µJ
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Min.
––––
Typ.
––––
Max.
0.33
Units
RθJC
RθCS
Wt
Junction-to-Case, Single
Case-to-Sink, Flat , Greased Surface
Weight
°C/W
K/W
––––
0.15
––––
––––
26 (0.9)
––––
––––
g (oz)
lbf•in
Mounting Torque
15 (1.7)
20 (2.2)
25 (2.8)
40 (4.4)
Terminal Torque
––––
(N•m)
Note:
Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
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Revision 0
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HFA105NH60R
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Cathode Anode Breakdown Voltage
Max Forward Voltage
Min. Typ. Max. Units
Test Conditions
IR = 100µA
VBR
VFM
600 ––– –––
1.3 1.5
V
IF = 105A
––– 1.5 1.7
1.2 1.4
V
IF = 210A
IF = 105A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
6.0
30
µA
1.5 6.0
mA TJ = 125°C, VR = 480V
CT
LS
Junction Capacitance
Series Inductance
––– 200 300
pF
VR = 200V
From top of terminal hole to mounting
plane
––– 6.0 –––
nH
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
––– 35 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
––– 90 140
––– 160 240
ns TJ = 25°C
trr2
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 105A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
––– 10
––– 15
18
30
A
Reverse Recovery Charge
––– 450 1300
––– 1200 3600
––– 310 –––
––– 240 –––
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
30.40 (1.197)
29.90 (1.177)
1/4-20 UNC-2B
19.69 (0.775)
18.42 (0.725)
4.11 (0.162)
3.86 (0.152)
12.83 (0.505)
12.57 (0.495)
DIA.
4.11 (0.162)
3.86 (0.152)
DIA.
LEAD ASSIGNMENTS
1 - CATHODE
2 - ANODE
19.18 (0.755)
18.92 (0.745)
SQ.
1
15.75 (0.620)
14.99 (0.590)
14.10 (0.555)
13.59 (0.535)
ALF- AK
H
P
Dimensions in millimeters and inches
3.30 (0.130)
3.05 (0.120)
2
39.62 (1.560)
38.61 (1.520)
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HFA105NH60R
1000
100
10
10000
T = 150°C
J
1000
100
10
T = 125°C
J
1
T = 150°C
J
T = 25°C
J
T = 125°C
J
0.1
0
200
400
600
T = 25°C
J
Reverse Voltage - V (V)
Fig. 2 - Typical Reverse CurrentRvs. Reverse
Voltage
A
10000
T = 25°C
J
1000
1
0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V
(V)
FM
100
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
P
D M
t
D = 0.08
1
t
2
0.01
Notes:
1. Duty factor D =
t / t
Single Pulse
(Thermal Resistance)
1
2
2. Peak T = P
x Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA105NH60R
100
10
1
240
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
200
160
120
80
I
= 200A
F
I
= 105A
F
I
= 40A
F
I
= 200A
F
I
= 105A
F
I
= 40A
F
40
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. d/idt
Fig. 6 - Typical Recovery Current vs. di/dt
f
f
10000
4000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
3000
I
F
= 200A
I
= 200A
I
= 105A
F
F
1000
2000
1000
0
I
= 105A
F
I
= 40A
F
I
= 40A
F
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 8 - Typical di(rec)M/dt vs. di/dt
Fig. 7 - Typical Stored Charge vs. di/dt
f
f
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HFA105NH60R
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
D
0.75
I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by rtr
and IRRM
dif/dt
ADJUST
trr X IRRM
IRFP250
G
Q
rr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during t portion of t
b
rr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
I
L = 100µH
L(PK)
HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
DIODE
Rg = 25 ohm
+
DECAY
TIME
CURRENT
MONITOR
Vd = 50V
V
(AVAL)
V
R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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