CPV364M4F [INFINEON]
IGBT SIP MODULE; IGBT模块SIP
| 型号： | CPV364M4F |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE |
| 文件： | 总10页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -5040
CPV364M4F
PRELIMINARY
IGBT SIP MODULE
Fast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz)
See Fig. 1 for Current vs. Frequency curve
D 1
D 3
D 5
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
3
6
9
4
1 5
1 0
1 6
D 2
D 4
1 2
1 8
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7
1 3
1 9
18 ARMS per phase (4.6 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
27
IC @ TC = 100°C
15
80
ICM
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
80
IF @ TC = 100°C
9.3
IFM
80
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
2500
63
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
25
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.0
3.0
Units
°C/W
g (oz)
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
θJC (DIODE)
θCS (MODULE)
–––
0.10
–––
–––
Wt
Weight of module
20 (0.7)
12/30/96
CPV364M4F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.35 1.5
––– 1.60 –––
IC = 15A
VGE = 15V
V
IC = 27A
See Fig. 2, 5
––– 1.35 –––
IC = 15A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
12 –––
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
––– ––– 250
––– ––– 2500
––– 1.3 1.7
––– 1.2 1.6
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 100 160
IC = 15A
Qge
Qgc
td(on)
tr
––– 15
––– 37
23
56
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
––– 42 –––
––– 18 –––
––– 220 330
––– 160 240
––– 0.46 –––
––– 0.86 –––
––– 1.32 1.8
––– 39 –––
––– 19 –––
––– 410 –––
––– 290 –––
––– 2.5 –––
––– 2200 –––
––– 140 –––
––– 29 –––
IC = 15A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
td(on)
tr
td(off)
tf
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 15A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
Turn-Off Delay Time
Fall Time
Ets
Total Switching Loss
Input Capacitance
mJ diode reverse recovery.
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
––– 42
––– 74 120
Diode Peak Reverse Recovery Charge ––– 4.0 6.0
––– 6.5 10
60
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
IF = 15A
VR = 200V
Irr
Qrr
Diode Reverse Recovery Charge
––– 80 180
––– 220 600
nC
di/dt =200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 188 ––– A/µs TJ = 25°C See Fig.
––– 160 ––– TJ = 125°C 17
CPV364M4F
25
20
15
10
5
7.34
T c = 9 0°C
T j = 1 25 °C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V cc = 50 % o f R a ted Vo lta g e
5.87
4.40
2.94
1.47
0
0.00
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1 0 0
1 0
1
1 0 0
TJ = 25°C
T
J
= 150°C
TJ = 150°C
1 0
TJ = 25°C
V G E = 15V
20µs PULSE WIDTH
V C C = 50V
5µs PULSE WIDTH
A
A
1
1
1 0
5
6
7
8
9
1 0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
C E
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV364M4F
30
25
20
15
10
5
3.0
2.0
1.0
V
= 15V
GE
I = 30A
C
80 us PULSE WIDTH
I = 15A
C
I = 7.5A
C
0
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
D M
0 .1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
N otes:
1 . D uty factor D =
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.0000 1
0.000 1
0 .00 1
0.01
0.1
10
t
, Re c ta ng ula r Pu ls e D uratio n (se c)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
CPV364M4F
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
0
20
16
12
8
VGE = 0V
f = 1 MHz
V
I
= 400V
= 15A
CC
C
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
res
4
A
0
1
1 0
1 0 0
0
20
40
60
80
100
120
Q , Total Gate Charge (nC)
VC E , Collector-to-Emitter Voltage (V)
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.45
1.40
1.35
1.30
10
V
V
= 480V
R
= 10OΩ
= 15V
= 480V
CC
GE
G
= 15V
V
GE
I = 30A
C
°
T
I
= 25
C
V
CC
J
C
= 15A
I = 15A
C
I = 7.5A
C
1
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance (OhΩm)
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
CPV364M4F
6.0
1000
100
10
V
T
= 20V
= 125 C
R
T
= 10OΩ
G
J
GE
J
o
°
= 150 C
V
= 480V
= 15V
CC
5.0
4.0
3.0
2.0
1.0
0.0
V
GE
SAFE OPERATING AREA
10
1
1
100
1000
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
1 0 0
1 0
T
T
T
= 150°C
= 125°C
J
J
J
=
25°C
1
0.8
1.2
1.6
2.0
2.4
F orwa rd Volta ge Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
CPV364M4F
1 0 0
1 0 0
1 0
1
VR = 200 V
TJ = 125 °C
TJ = 25°C
VR = 200 V
TJ = 125 °C
TJ = 25°C
8 0
I
= 30A
F
I
= 30A
F
I
= 15A
F
6 0
I
= 15A
F
I
= 5.0A
F
4 0
I
= 5.0A
F
2 0
1 0 0
1 0 0 0
1 0 0
1 0 0 0
d i /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
8 0 0
1 0 0 0
VR = 200V
TJ = 1 25 °C
TJ = 2 5°C
VR = 2 00V
TJ = 1 25°C
TJ = 2 5°C
6 0 0
I
= 30A
F
I
= 5.0A
F
4 0 0
2 0 0
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
1 0 0
1 0 0
1 0 0
1 0 0 0
1 0 0 0
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
CPV364M4F
90% Vge
+Vg e
Same type
device as
D.U.T.
Vce
90% Ic
10 % Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td (off)
tf
t1 +5µ S
Eoff =
Vce ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
G ATE VO LTAGE D .U .T.
Qrr =
Ic
1 0% +Vg
+Vg
tx
10 % Irr
10% Vcc
Vcc
DUT VOLTAGE
AN D C URR ENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
9 0% Ic
Ic
DIODE RECOVERY
W AVEFORM S
5% Vce
td(on)
tr
t2
Eon = Vce ie dt
t1
t4
Erec =
Vd id d t
t3
DIOD E REVERSE
REC OVER Y EN ER GY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
CPV364M4F
Vg
GATE SIGN AL
DEVICE UNDER TEST
CURR EN T D .U .T.
VOL TAGE IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
10 00V
V *
c
0 - 480V
50V
60 00µF
100 V
Figure 20. Pulsed Collector Current
Figure 19. Clamped Inductive Load Test
Test Circuit
Circuit
CPV364M4F
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline IMS-2
62.43 (2.458)
53.85 (2.120)
7.87 (.310)
5.46 (.215)
3.91 (.154)
2X
NOTES:
1. Tolerance unless otherwise
specified ± 0.254 (.010).
2. Controlling D imension: Inch.
3. Dimensions are shown in
Millimeter (Inches).
21.97 (.865)
4. Term inal numbers are shown
for reference only.
1
2
3
4
5
6
7
8
9
10 1 1 1 2 13 14 1 5 1 6 17 18 19
0.38 (.015)
3.94 (.155)
1.27 (.050)
3.05 ± 0.38
(.120 ± .015)
1.27 (.050)
13X
4.06 ± 0.51
(.160 ± .020)
2.54 (.100)
6X
0.76 (.030)
13X
0.51 (.020)
5.08 (.200)
6X
6.10 (.240)
IMS-2 Package Outline (13 Pins)
D im ens ion s in M illim ete rs and (Inc he s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
12/96
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