CPV364MM [INFINEON]
Short Circuit Rated Fast IGBT; 短路额定IGBT的快速
| 型号： | CPV364MM |
| 厂家： | 
Infineon |
| 描述： | Short Circuit Rated Fast IGBT |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet PD - 5.035
CPV364MM
Short Circuit Rated Fast IGBT
IGBT SIP MODULE
Features
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz)
•
D1
D2
D3
D4
D5
D6
Q1
Q2
Q3
Q4
Q5
3
6
9
4
15
10
16
Q6
12
18
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7
13
19
13 ARMS per phase (4.1 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
22
12
IC @ TC = 100°C
ICM
44
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
44
IF @ TC = 100°C
9.3
IFM
44
tsc
10
µs
V
VGE
Gate-to-Emitter Voltage
± 20
2500
62.5
25
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
VRMS
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
°C/W
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
2.0
3.0
—
θJC (DIODE)
θCS (MODULE)
—
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 2
C-425
CPV364MM
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
0.69
1.7
2.0
1.9
—
—
—
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
V/°C VGE = 0V, IC = 1.0mA
IC = 12A
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
—
VGE = 15V
—
—
V
IC = 22A
—
—
IC = 12A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-12
12
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
—
—
S
VCE = 100V, IC = 24A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
250
3500
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
VFM
IGES
Diode Forward Voltage Drop
—
1.3 1.7
1.2 1.6
V
—
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
—
±500 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
59
8.6
25
26
37
80
10
42
—
—
IC = 24A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
TJ = 25°C
IC = 24A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
240 410
230 420
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.75
1.65
—
—
mJ
µs
2.4 3.6
—
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
28
37
—
—
—
—
—
—
—
—
60
ns
IC = 24A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
Turn-Off Delay Time
Fall Time
380
460
4.5
1500
190
20
Ets
Total Switching Loss
Input Capacitance
mJ
pF
ns
A
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
ƒ = 1.0MHz
42
TJ = 25°C
74 120
4.0 6.0
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.5
10
VR = 200V
di/dt = 200A/µs
Qrr
80 180
220 600
nC
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
A/µs TJ = 25°C
TJ = 125°C
Notes:
Repetitive rating; V GE=20V, pulse width
limited by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω
Pulse width 5.0µs,
single shot.
Refer to Section D for the following:Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Package Outline 5 - IMS-2 Section D - page D-14
C-426
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