CPV364M4KPBF [VISHAY]
CPV364M4KPBF (Short Circuit Rated Ultrafast IGBT); CPV364M4KPBF （短路额定IGBT超快）
| 型号： | CPV364M4KPBF |
| 厂家： | 
VISHAY |
| 描述： | CPV364M4KPBF (Short Circuit Rated Ultrafast IGBT) |
| 文件： | 总11页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CPV364M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 µs
at 125 °C, VGE = 15 V
RoHS
COMPLIANT
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
IMS-2
• Totally lead (Pb)-free and RoHS compliant
• Designed and qualified for industrial level
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
DESCRIPTION
I
RMS per phase (3.1 kW total)
with TC = 90 °C
11 ARMS
The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
TJ
125 °C
360 Vdc
0.8
Supply voltage
Power factor
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 13 A, 25 °C
1.8 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
600
V
TC = 25 °C
24
Continuous collector current
IC
TC = 100 °C
TC = 100 °C
13
A
(1)
Pulsed collector current
Clamped inductive load current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
ICM
48
(2)
ILM
48
tSC
VGE
9.3
µs
V
20
2500
VISOL
t = 1 min, any terminal to case
TC = 25 °C
VRMS
63
Maximum power dissipation, each IGBT
PD
W
TC = 100 °C
25
Operating junction and storage temperature range
Soldering temperature
TJ, TStg
- 55 to + 150
300
°C
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf ⋅ in
(N ⋅ m)
Mounting torque
Notes
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
VCC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)
(2)
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
-
MAX.
UNITS
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
RthJC (IGBT)
2.2
RthJC (DIODE)
RthCS (MODULE)
-
3.7
°C/W
0.10
20
-
-
-
g
Weight of module
0.7
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNITS
V
(1)
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 µA
600
-
-
Temperature coeff. of breakdown voltage ΔV(BR)CES/ΔTJ
VGE = 0 V, IC = 1.0 mA
IC = 13 A
-
0.63
1.80
1.80
1.56
-
V/°C
-
2.3
-
V
GE = 15 V
Collector to emitter saturation voltage
VCE(on)
IC = 24 A
-
See fig. 2, 5
V
IC = 13 A, TJ = 150 °C
-
1.73
6.0
-
Gate threshold voltage
VGE(th)
3.0
VCE = VGE, IC = 250 µA
Temperature coeff. of threshold voltage
Forward transconductance
ΔVGE(th)/ΔTJ
-
11
-
- 13
18
mV/°C
S
(2)
gfe
VCE = 100 V, IC = 10 A
VGE = 0 V, VCE = 600 V
-
-
250
3500
1.7
1.6
100
Zero gate voltage collector current
ICES
µA
V
GE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 15 A
C = 15 A, TJ = 150 °C
VGE 20 V
-
-
-
1.3
1.2
-
Diode forward voltage drop
VFM
IGES
See fig. 13
V
I
-
Gate to emitter leakage current
=
-
nA
Notes
(1)
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
Pulse width 5.0 µs; single shot
(2)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94488
Revision: 01-Sep-08
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
110
14
MAX. UNITS
IC = 13 A
VCC = 400 V
GE = 15 V
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Qg
-
-
-
-
-
-
-
-
-
-
170
Qge
Qgc
td(on)
tr
21
74
-
nC
V
49
See fig. 8
50
30
-
TJ = 25 °C
I
ns
C = 13 A, VCC = 480 V
Turn-off delay time
Fall time
td(off)
tf
110
91
170
140
-
VGE = 15 V, RG = 10 Ω
Energy losses include “tail” and diode
reverse recovery
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Eoff
Ets
0.56
0.28
0.84
See fig. 9, 10, 18
-
mJ
µs
1.1
VCC = 360 V,TJ = 125 °C
GE = 15 V, RG = 10 Ω, VCPK < 500 V
Short circuit withstand time
tsc
10
-
-
V
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
47
30
-
TJ = 150 °C, see fig. 9, 10, 11, 18
C = 13 A, VCC = 480 V
GE = 15 V, RG = 10 Ω
Energy losses include “tail” and
diode reverse recovery
-
I
V
ns
Turn-off delay time
Fall time
250
150
1.28
7.5
1600
130
55
-
-
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Ets
-
-
mJ
nH
LE
Measured 5 mm from package
VGE = 0 V
Cies
Coes
Cres
-
V
CC = 30 V
-
pF
ƒ = 1.0 MHz
See fig. 7
-
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
42
60
120
6.0
10
180
600
-
Diode reverse recovery time
trr
See fig. 14
See fig. 15
See fig. 16
See fig. 17
ns
A
74
4.0
6.5
80
Diode peak reverse recovery charge
Diode reverse recovery charge
Irr
IF = 15 A
VR = 200 V
dI/dt = 200 A/µs
Qrr
nC
A/µs
220
188
160
Diode peak rate of fall of recovery
during tb
dI(rec)M/dt
-
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
5.27
4.68
18
16
14
12
10
8
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
4.10
3.51
2.93
2.34
1.76
1.17
6
4
2
0.59
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
100
160
140
120
100
80
°
T = 150 C
J
10
DC
°
T = 25 C
J
60
Square wave (D=0.50)
80% rated Vr applied
40
20
V
= 15V
see note (2)
GE
20µs PULSE WIDTH
0
1
1
10
0
5
, C1a0se Temperature (°C)25
15
20
30
V
, Collector-to-Emitter Voltage (V)
T
CE
C
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs.
Case Temperature
100
4.0
V
= 15V
GE
80 us PULSE WIDTH
3.0
2.0
1.0
I
=
=
26A
13A
C
°
T = 150 C
J
10
°
T = 25 C
J
I
I
C
C
= 6.5A
V
= 50V
CC
5µs PULSE WIDTH
1
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature ( C)
5
6
7
8
9
10
°
V
, Gate-to-Emitter Voltage (V)
J
GE
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 3 - Typical Output Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94488
Revision: 01-Sep-08
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case
1.5
3000
2500
2000
1500
1000
500
V
V
T
= 480V
CC
GE
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
= 15V
C
= C + C
ies
ge
gc ,
°
= 25
C
C
= C
J
res
gc
I
= 13A
C
= C + C
C
oes
ce
gc
C
ies
1.0
0.5
C
oes
res
C
0
1
10
100
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
CE
R
, Gate Resistance (Ω)
G
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
10
20
10Ω
R
=
G
V
CC
I
C
= 400V
= 13A
V
= 15V
GE
V
= 480V
CC
16
12
8
I
=
A
26
C
I
I
=
=
A
A
13
C
C
1
6.5
4
0
0.1
0
20
Q
40
60
80
100
120
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Total Gate Charge (nC)
G
T , Junction Temperature ( C )
J
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
1000
100
10
4.0
VGE = 20V
10Ω
R
T
=
G
J
TJ = 125°C
°
= 150 C
V
= 480V
= 15V
CC
V
GE
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
1
0
5
10
15
20
25
30
1
10
100
1000
I
, Collector-to-emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
C
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94488
Revision: 01-Sep-08
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
100
80
60
40
20
800
600
400
200
0
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 30A
F
I
= 30A
F
I
= 15A
F
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 16 - Typical Stored Charge vs. dIF/dt
100
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 30A
F
I
= 15A
I
= 5.0A
F
F
10
I
= 15A
F
I
= 30A
F
I
= 5.0A
F
1
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
Fig. 15 - Typical Recovery Current vs. dIF/dt
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
Same type
device as
D.U.T.
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
td(on)
80 %
of VCE
430 µF
Vcc
Ipk
90% Ic
Ic
D.U.T.
5% Vce
tr
t2
Vce ie dt
Eon =
t2
t1
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
trr
id dt
tx
trr
Qrr =
90% Vge
Ic
+Vge
tx
Vce
10% Irr
10% Vcc
Vcc
90% Ic
Vpk
10% Vce
Ic
Irr
Ic
5% Ic
DIODE RECOVERY
WAVEFORMS
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
t4
Erec = Vd id dt
t3
DIODE REVERSE
RECOVERY ENERGY
t3
t4
t1
t2
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94488
Revision: 01-Sep-08
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
D.U.T.
L
480 V
RL =
4 x IC at 25 °C
VC
1000 V
0 - 480 V
6000 µF
100 V
50 V
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
1
Q1
Q2
D1
D2
Q3
Q4
D3
D4
Q5
Q6
D5
9
15
10
3
6
4
16
D6
12
18
7
13
19
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95066
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
Outline Dimensions
Vishay Semiconductors
IMS-2 (SIP)
DIMENSIONS in millimeters (inches)
62.43 (2.458)
53.85 (2.120)
7.87 (0.310)
5.46 (0.215)
Ø 3.91 (0.154)
2 x
21.97 (0.865)
1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0.38 (0.015)
3.94 (0.155)
1.27 (0.050)
6.10 (0.240)
3.05 0.38
1.27 (0.050)
13 x
4.06 0.51
(0.160 0.020)
(0.120 0.015)
2.54 (0.100)
6 x
0.76 (0.030)
13 x
0.51 (0.020)
5.08 (0.200)
6 x
IMS-2 Package Outline (13 Pins)
Notes
(1)
Tolerance uless otherwise specified 0.ꢀ54 mm (0.010")
Controlling dimension: inch
Terminal numbers are shown for reference only
(ꢀ)
(3)
Document Number: 95066
Revision: 30-Jul-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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