BTS410E2E3043 [INFINEON]
Smart Highside Power Switch; 海赛德智能电源开关
| 型号： | BTS410E2E3043 |
| 厂家： | 
Infineon |
| 描述： | Smart Highside Power Switch |
| 文件： | 总16页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 410 E2
Smart Highside Power Switch
Features
Product Summary
•
•
•
•
•
•
•
•
Overload protection
Overvoltage protection
Vbb(AZ)
65
V
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
V
4.7 ... 42 V
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
bb(on)
R
ON
220
1.8
5
mΩ
A
I
I
L(ISO)
L(SCr)
A
1
)
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
TO-220AB/5
•
•
•
•
•
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
5
5
bb
5
1
1
Straight leads
SMD
Standard
Application
•
•
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
3
Voltage
source
Gate
protection
Overvoltage
protection
Current
limit
VLogic
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
5
Temperature
sensor
Rectifier
IN
2
4
Open load
detection
Load
Logic
ESD
ST
Short circuit
detection
PROFET
GND
1
Load GND
Signal GND
1)
With external current limit (e.g. resistor R =150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Semiconductor Group
1 of 16
2003-Oct-01
BTS 410 E2
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Values
65
Unit
V
Supply voltage (overvoltage protection see page 3)
4)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump
100
V
RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
Tstg
Ptot
°C
Power dissipation (DC), TC ≤ 25 °C
50
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.
IL = 1.8 A, ZL = 2.3H, 0 Ω: EAS
IN: VESD
all other pins:
4.5
J
Electrostatic discharge capability (ESD)
(Human Body Model)
1
2
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
±5.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
±5.0
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
typ
Unit
min
--
max
2.5
75
K/W
Thermal resistance
--
--
35
R
--
--
junction - ambient (free air):
SMD version, device on PCB5):
thJA
--
2)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
4)
5)
R = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
I
bb
connection. PCB is vertical without blown air.
Semiconductor Group
2
2003-Oct-01
BTS 410 E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
RON
IL = 1.6 A
T=25 °C:
j
190
390
220
440
mΩ
T=150 °C:
j
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, T = 85 °C
IL(ISO)
1.6
--
1.8
--
--
1
A
C
Output current (pin 5) while GND disconnected or
IL(GNDhigh)
mA
GND pulled up, V =30 V, V = 0, see diagram
bb
IN
page 7, T =-40...+150°C
j
Turn-on time
Turn-off time
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
12
5
--
--
125
85
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
dV /dton
-dV/dtoff
--
--
--
--
3 V/µs
6 V/µs
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Operating Parameters
Operating voltage 6)
T =-40...+150°C: Vbb(on)
4.7
2.9
2.7
--
--
--
42
V
V
j
Undervoltage shutdown
T =25°C: Vbb(under)
4.5
4.7
j
T =-40...+150°C:
j
Undervoltage restart
T =-40...+150°C: Vbb(u rst)
--
--
--
4.9
6.0
V
V
j
Undervoltage restart of charge pump
see diagram page 13
Vbb(ucp)
5.6
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
0.1
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection7)
Ibb=4 mA
T =-40...+150°C: Vbb(over)
42
40
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
0.1
70
--
T =-40...+150°C: Vbb(AZ)
j
65
--
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
--
--
10
18
15
25
µA
µA
IL(off)
--
--
20
Leakage output current (included in Ibb(off)
VIN=0
)
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
IGND
--
1
2.1
mA
6)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
7)
Meassured without load. See also V
in table of protection functions and circuit diagram page 7.
ON(CL)
Semiconductor Group
3
2003-Oct-01
BTS 410 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp)
( max 450 µs if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
9
--
4
--
12
--
23
--
15
A
Repetitive overload shutdown current limit
VON= 8 V, Tj = Tjt (see timing diagrams, page 11)
Short circuit shutdown delay after input pos. slope
IL(SCr)
--
--
5
--
A
VON > VON(SC)
,
Tj =-40..+150°C: td(SC)
--
450
µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)
61
--
68
--
73
75
V
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
--
150
--
8.5
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 11)
∆Tjt
10
--
--
-Vbb
--
32
V
Diagnostic Characteristics
Open load detection current
IL (OL)
mA
(on-condition)
Tj=-40 ..150°C:
2
--
150
8)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
9)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10)
11)
Short circuit current limit for max. duration of t
d(SC) max
=450 µs, prior to shutdown
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Semiconductor Group
4
2003-Oct-01
BTS 410 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Input and Status Feedback12)
Input turn-on threshold voltage
Tj =-40..+150°C: VIN(T+)
Tj =-40..+150°C: VIN(T-)
1.5
1.0
--
--
--
2.4
--
V
V
Input turn-off threshold voltage
Input threshold hysteresis
∆ VIN(T)
IIN(off)
0.5
--
--
V
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
1
30
70
450
µA
µA
µs
IIN(on)
10
--
25
--
td(ST SC)
(short circuit)
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
300
-- 1400
µs
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +50 uA: VST(high)
5.0
--
6
--
--
0.4
V
j
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
j
12)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group
5
2003-Oct-01
BTS 410 E2
Truth Table
Input-
level
Output
level
Status
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
Open load
L
H
L
L
H
H
H
L
H
H
H
L
H
H
H
L
H
H
H
L
H
H
L
13
)
H
H
H
H
L
L
H
H
Short circuit
to GND
Short circuit
L
H
L
H
L
L
H
L
H
H
L
H
H
H
H
H
L
L
14)
14)
14)
to V
bb
H
H
H (L
)
H (L
)
H
H (L
L
)
Overtem-
perature
Under-
L
H
L
L
L
L
L
L
L
L
L
H
H
L
L
H
H
L
L
H
H
L
15)
15)
L
L
L
15)
15)
voltage
H
L
Overvoltage
L
H
L
L
L
L
L
L
H
H
H
H
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Input circuit (ESD protection)
I
bb
R
I
3
IN
I
IN
V
bb
IN
ESD-
ZD ZD
2
I
V
L
ON
I1
I2
I
OUT
PROFET
I
I
5
ST
ST
GND
4
V
GND
V
ST
IN
V
1
I
bb
V
GND
OUT
ZD 6 V typ., ESD zener diodes are not to be used as
I1
R
GND
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
13)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14)
15)
Low resistance short V to output may be detected in ON-state by the no-load-detection
No current sink capability during undervoltage shutdown
bb
Semiconductor Group
6
2003-Oct-01
BTS 410 E2
Overvolt. and reverse batt. protection
Status output
+ V
bb
+5V
V
Z2
R
R
IN
IN
RST(ON)
Logic
ST
ST
ST
V
ESD-
ZD
Z1
PROFET
GND
GND
R
GND
ESD-Zener diode: 6 V typ., max 5 mA;
< 250 Ω at 1.6 mA, ESD zener diodes are not
Signal GND
R
ST(ON)
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
V
R
= 6.2 V typ., V = 70 V typ., R
= 15 kΩ
= 150 Ω, R ,
GND IN
Z1
Z2
ST
Open-load detection
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V
bb
+ V
bb
V
ON
V
ON
ON
OUT
Short circuit
detection
OUT
Logic
unit
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V
bb
GND disconnect
V
Z
VON
3
V
bb
IN
2
OUT
OUT
PROFET
GND
PROFET
5
ST
4
GND
1
V
ON
clamped to 68 V typ.
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
Semiconductor Group
7
2003-Oct-01
BTS 410 E2
Inductive Load switch-off energy
dissipation
GND disconnect with GND pull up
E
bb
3
E
AS
V
bb
IN
2
E
E
Load
L
V
bb
OUT
PROFET
IN
5
ST
OUT
4
PROFET
GND
1
=
ST
GND
L
V
V
V
V
IN ST
Z
{
GND
bb
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Energy stored in load inductance:
V
load
disconnect with energized inductive
bb
2
1
E = / ·L·I
L
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
V
high
bb
IN
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
2
OUT
with an approximate solution for RL > 0Ω:
PROFET
5
IL·L
2·RL
IL·RL
|VOUT(CL)|
ST
4
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
GND
1
Maximum allowable load inductance for
a single switch off
V
bb
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
Normal load current can be handled by the PROFET
itself.
L [mH]
10000
V
disconnect with charged external
bb
inductive load
S
3
1000
100
10
V
high
IN
bb
2
OUT
PROFET
5
D
ST
4
GND
1
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
1
2
3
4
5
6
I
[A]
L
Semiconductor Group
8
2003-Oct-01
BTS 410 E2
Typ. transient thermal impedance chip case
Z
thJC = f(tp, D), D=tp/T
Z
thJC [K/W]
10
1
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
[s]
t
p
Semiconductor Group
9
2003-Oct-01
BTS 410 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type
BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307
308
Logic version
B
D
E
F
G
H
Overtemperature protection with hysteresis
T >150 °C, latch function16 17
X
X
X
X
X
X
)
)
j
X
X
X
T >150 °C, with auto-restart on cooling
j
Short circuit to GND protection
switches off when V >3.5 V typ. and Vbb> 7 V
typ (when first turned on after approx. 150 µs)
X
X
ON
)
16
16)
switches off when V >8.5 V typ.
(when first turned on after approx. 150 µs)
X
X
X
X
X
X
X
X
ON
X
X
Achieved through overtemperature protection
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart18)
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
Status feedback for
overtemperature
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
-
X
X
X
X
-
short circuit to GND
X
19)
X
19)
X
19)
-
19)
short to V
bb
-
-
-
-
open load
X
X
X
X
-
X
-
X
-
undervoltage
overvoltage
Status output type
CMOS
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
X
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
X
X
X
X
X
X
X
X
16)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
≠
OUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and t
With latch function. Reseted by a) Input low, b) Undervoltage
No auto restart after overvoltage in case of short circuit
.
d(SC)
17)
18)
19)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Semiconductor Group
10
2003-Oct-01
BTS 410 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
t
t
d(ST)
d(bb IN)
ST
V
V
bb
*)
OUT
V
OUT
A
I
L
ST open drain
I
L(OL)
t
t
A
*) if the time constant of load is too large, open-load-status may
in case of too early V =high the device may not turn on (curve A) occur
IN
t
d(bb IN) approx. 150 µs
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
V
OUT
V
OUT
t
d(SC)
I
L
I
L
t
t
t
approx. -- µs if Vbb - VOUT > 8.5 V typ.
d(SC)
Semiconductor Group
11
2003-Oct-01
BTS 410 E2
Figure 4a: Overtemperature:
Reset if T <T
Figure 3b: Turn on into overload,
j
jt
IN
IN
ST
I
L
I
L(SCp)
I
L(SCr)
V
OUT
T
J
ST
t
t
Heating up may require several seconds,
bb - VOUT < 8.5 V typ.
V
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
t
d(ST)
ST
ST
V
OUT
V
OUT
I
L
open
I
L
**)
t
t
**) current peak approx. 20 µs
Semiconductor Group
12
2003-Oct-01
BTS 410 E2
Figure 6b: Undervoltage restart of charge pump
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
V
ON(CL)
V
on
IN
t
t
d(ST OL1)
d(ST OL2)
ST
V
V
bb(over)
OUT
V
V
bb(o rst)
bb(u rst)
V
bb(u cp)
normal
normal
V
bb(under)
open
I
L
V
bb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V
V
V
V
ON(CL)
bb(over)
bb(o rst)
bb
V
bb
V
V
bb(u cp)
bb(under)
V
V
bb(u rst)
OUT
V
OUT
ST
t
ST open drain
t
Semiconductor Group
13
2003-Oct-01
BTS 410 E2
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
bb
V
bb(o rst)
Output short to GND
short circuit shutdown
V
I
OUT
L
ST
t
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
Semiconductor Group
14
2003-Oct-01
BTS 410 E2
Package and Ordering Code
All dimensions in mm
SMD TO-220AB/5, Opt. E3062 Ordering code
Standard TO-220AB/5
Ordering code
BTS410E2 E3062A T&R:
Q67060-S6102-A4
BTS 410 E2
Q67060-S6102-A2
Changed since 04.96
Date Change
Mar.
E
maximum rating and diagram
AS
1997 and Z
diagram added
thJC
TO-220AB/5, Option E3043 Ordering code
ESD capability (except Input)
specified to 2kV, R
specified
thJA SMD
BTS 410 E2 E3043
Q67060-S6102-A3
I
reduced from 10 to
L(GND high) max
1 mA
Option Overview table columns for
BTS307/308 added
Fig. 1a: V -spike at V -turn-on
out
bb
added
Semiconductor Group
15
2003-Oct-01
BTS 410 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
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Semiconductor Group
16
2003-Oct-01
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