BTS410F2 [INFINEON]
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown); 海赛德智能电源开关（过载保护电流限制，短路保护热关断）
| 型号： | BTS410F2 |
| 厂家： | 
Infineon |
| 描述： | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) |
| 文件： | 总13页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 410 F2
Smart Highside Power Switch
Features
Product Summary
•
•
•
•
•
•
•
•
Overload protection
Overvoltage protection
Vbb(AZ)
65
V
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
V
4.7 ... 42 V
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
bb(on)
R
ON
220
mΩ
I
I
1.8
2.7
A
A
L(ISO)
L(SCr)
1
)
TO-220AB/5
•
•
•
•
•
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
5
5
bb
5
1
1
Straight leads
Standard
SMD
Application
•
•
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
+ V
bb
3
Vo lta g e
so urc e
Ga te
Ove rvo lta g e
p ro te c tio n
Curre nt
lim it
p ro te c tio n
V
Logic
OUT
Lim it fo r
unc la m p e d
ind . lo a d s
Cha rg e p um p
Le ve l shifte r
Vo lta g e
se nso r
5
Te m p e ra ture
se nso r
Re c tifie r
IN
2
Op e n lo a d
d e te c tio n
Load
Lo g ic
ESD
4
ST
Sho rt c irc uit
d e te c tio n
PROFET
GND
1
Load GND
Signal GND
1)
With external current limit (e.g. resistor R =150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
BTS 410 F2
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Values
Unit
V
Supply voltage (overvoltage protection see page 3)
65
4)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump
100
V
RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
Tstg
Ptot
°C
Power dissipation (DC), TC ≤ 25 °C
50
W
Inductive load switch-off energy dissipation, single pulse
V=12V, Tj,start =150°C, TC =150°C const.
IL = 1.8 A, ZL = 2.3H, 0 Ω: EAS
IN: VESD
all other pins:
4.5
J
Electrostatic discharge capability (ESD)
(Human Body Model)
1
2
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
±5.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
±5.0
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
typ
Unit
min
--
max
2.5
75
K/W
Thermal resistance
--
--
35
R
--
--
junction - ambient (free air):
SMD version, device on PCB5):
thJA
--
2)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
4)
5)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air.
bb
Semiconductor Group
2
BTS 410 F2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
RON
IL = 1.6 A
T=25 °C:
j
190
390
220
440
mΩ
T=150 °C:
j
Nominal load current, ISO Norm (pin 3 to 5)
ON = 0.5 V, T = 85 °C
V
IL(ISO)
1.6
--
1.8
--
--
1
A
C
Output current (pin 5) while GND disconnected or
GND pulled up, V =30 V, V = 0, see diagram
IL(GNDhigh)
mA
bb
IN
page 7, T =-40...+150°C
j
Turn-on time
Turn-off time
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
12
5
--
--
125
85
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
dV /dton
-dV/dtoff
--
--
--
--
3 V/µs
6 V/µs
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Operating Parameters
Operating voltage 6)
T =-40...+150°C: Vbb(on)
4.7
2.9
2.7
--
--
--
42
V
V
j
Undervoltage shutdown
T =25°C: Vbb(under)
4.5
4.7
j
T =-40...+150°C:
j
Undervoltage restart
T =-40...+150°C: Vbb(u rst)
--
--
--
4.9
6.0
V
V
j
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
5.6
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
0.1
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection7)
Ibb=4 mA
T =-40...+150°C: Vbb(over)
42
40
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
0.1
70
--
T =-40...+150°C: Vbb(AZ)
j
65
--
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
--
--
10
18
15
25
µA
µA
IL(off)
--
--
20
Leakage output current (included in Ibb(off)
VIN=0
)
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
IGND
--
1
2.1 mA
6)
7)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
Meassured without load. See also V
in table of protection functions and circuit diagram page 6.
ON(CL)
Semiconductor Group
3
BTS 410 F2
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 450 µs if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
4.0
3.5
2.0
--
5.5
3.5
11
10
7.5
A
Overload shutdown current limit
IL(SCr)
VON= 8 V, Tj = Tjt (see timing diagrams, page 10)
--
--
2.7
--
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC)
,
Tj =-40..+150°C: td(SC)
450
µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)
61
--
68
--
73
75
V
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
--
150
--
8.5
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
∆Tjt
10
--
--
-Vbb
--
32
V
Diagnostic Characteristics
Open load detection current
IL (OL)
mA
(on-condition)
Tj=-40 ..150°C:
2
--
150
Input and Status Feedback11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+150°C: VIN(T+)
Tj =-40..+150°C: VIN(T-)
∆ VIN(T)
1.5
1.0
--
--
--
2.4
--
V
V
0.5
--
--
V
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
IIN(off)
1
30
70
450
µA
µA
µs
IIN(on)
10
--
25
--
td(ST SC)
(short circuit)
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
300
-- 1400
µs
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +50 uA: VST(high)
5.0
--
6
--
--
0.4
V
j
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
j
8)
9)
10)
Add I , if I > 0, add I , if V >5.5 V
Short circuit current limit for max. duration of t
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
ST
ST
IN
IN
=450 µs, prior to shutdown
d(SC) max
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
11)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group
4
BTS 410 F2
Truth Table
Input-
level
Output
level
Status
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
Open load
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
L
H
H
L
L
H
L
H
H
H
L
H
L
H
H
H
L
H
L
H
H
H
L
H
H
H
H
H
L
H
H
L
L
H
L
H
12
)
H
Short circuit
to GND
Short circuit
L
L
H
H
L
L
L
L
L
L
H
H
13)
13)
13)
to V
bb
H (L
L
)
H (L
)
H (L
)
Overtem-
perature
Under-
voltage
Overvoltage
L
L
H
H
H
H
L
L
H
H
H
H
L
L
L
14)
14)
L
L
L
H
H
H
H
14)
14)
L
L
L
L
L
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
12)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
13)
14)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
No current sink capability during undervoltage shutdown
Semiconductor Group
5
BTS 410 F2
Terms
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
I
bb
3
I
+ V
IN
bb
V
bb
IN
2
I
V
L
ON
OUT
PROFET
V
I
5
ST
ON
ST
4
V
GND
V
ST
IN
OUT
V
1
I
Short circuit
detection
bb
V
GND
Logic
unit
OUT
R
GND
Inductive and overvoltage output clamp
Input circuit (ESD protection)
+ V
bb
R
V
Z
I
IN
ESD-
V
ON
ZD ZD
I1
I2
I
I
OUT
GND
PROFET
GND
ZD 6 V typ., ESD zener diodes are not to be used as
I1
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
V
ON
clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ V
bb
Status output
V
Z2
+5V
R
R
IN
IN
Logic
R
ST(ON)
ST
ST
ST
V
Z1
PRO FET
ESD-
ZD
GND
GND
R
GND
Signal GND
ESD-Zener diode: 6 V typ., max 5 mA;
R
< 250 Ω at 1.6 mA, ESD zener diodes are not
V
ST(ON)
= 6.2 V typ., V = 70 V typ., R
= 150 Ω, R ,
GND IN
Z1
Z2
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
R
= 15 kΩ
ST
Semiconductor Group
6
BTS 410 F2
Open-load detection
V
disconnect with energized inductive
bb
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
load
3
+ V
bb
V
high
bb
IN
2
OUT
PROFET
5
VON
ST
ON
4
GND
1
OUT
Open load
detection
Logic
unit
V
bb
Normal load current can be handled by the PROFET
itself.
V
disconnect with charged external
bb
GND disconnect
inductive load
S
3
3
V
high
IN
bb
V
2
bb
IN
2
OUT
PROFET
5
D
OUT
PROFET
ST
4
5
GND
1
ST
4
GND
1
V
V
V
V
V
bb
IN
ST
GND
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
Inductive Load switch-off energy
dissipation
GND disconnect with GND pull up
E
bb
3
E
AS
V
bb
IN
E
2
Load
V
bb
OUT
IN
PROFET
5
ST
4
O U T
PROFET
GND
=
ST
E
1
L
G N D
L
V
V
V
V
IN ST
Z
{
GND
R
L
L
bb
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Energy stored in load inductance:
2
L
1
E = / ·L·I
L
2
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,
∫
Semiconductor Group
7
BTS 410 F2
with an approximate solution for RL > 0Ω:
IL·L
2·RL
IL·RL
|VOUT(CL)|
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Z
thJC [K/W]
10
Vbb = 12 V, RL = 0 Ω
L [mH]
10000
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
1000
0.1
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
[s]
t
100
p
1.5
1.75
2
2.25
2.5
2.75
3
I
[A]
L
Semiconductor Group
8
BTS 410 F2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type
BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307
308
Logic version
B
D
E
F
G
H
Overtemperature protection with hysteresis
T >150 °C, latch function15 16
X
X
X
X
X
X
)
)
j
X
X
X
T >150 °C, with auto-restart on cooling
j
Short circuit to GND protection
switches off when V >3.5 V typ. and Vbb> 7 V
typ (when first turned on after approx. 150 µs)
X
X
ON
)
15
15)
switches off when V >8.5 V typ.
(when first turned on after approx. 150 µs)
X
X
X
X
X
X
X
X
ON
X
X
Achieved through overtemperature protection
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart17)
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
Status feedback for
overtemperature
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
-
X
X
X
X
-
short circuit to GND
X
18)
X
18)
X
18)
-
18)
short to V
bb
-
-
-
-
open load
X
X
X
X
-
X
-
X
-
undervoltage
overvoltage
Status output type
CMOS
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
X
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
X
X
X
X
X
X
X
X
15)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
≠
OUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and t
With latch function. Reseted by a) Input low, b) Undervoltage
No auto restart after overvoltage in case of short circuit
.
d(SC)
16)
17)
18)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Semiconductor Group
9
BTS 410 F2
Timing diagrams
Figure 3a: Turn on into short circuit,
Figure 1a: V turn on:
bb
IN
IN
t
d(bb IN)
V
ST
bb
VOUT
VOUT
t
d(SC)
A
IL
ST open drain
t
t
A
in case of too early V =high the device may not turn on (curve A)
IN
t
approx. -- µs if Vbb - VOUT > 8.5 V typ.
d(SC)
t
d(bb IN) approx. 150 µs
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
I L
td(ST)
ST
I
L(SCp)
*)
I
L(SCr)
V
OUT
ST
I L
IL(OL)
t
t
Heating up may require several seconds,
V
bb - VOUT < 8.5 V typ.
*) if the time constant of load is too large, open-load-status may
occur
Semiconductor Group
10
BTS 410 F2
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
IN
t
d(ST)
ST
ST
V OUT
VOUT
I L
I L
**)
open
t
t
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
Reset if (IN=low) and (T <T )
j
jt
IN
IN
t
t
d(ST OL1)
d(ST OL2)
ST
ST
V
VOUT
OUT
normal
normal
open
IL
T
J
t
t
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
*) ST goes high , when V =low and T <T
IN
j
jt
Semiconductor Group
11
BTS 410 F2
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
VON(CL)
V
V
V
bb(over)
bb(o rst)
V
bb
bb
V
bb(u cp)
V
bb(under)
V
bb(u rst)
VOUT
VOUT
ST
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
Figure 9a: Overvoltage at short circuit shutdown:
VON(CL)
Von
IN
V
bb
V
bb(o rst)
Output short to GND
VOUT
V bb(over)
short circuit shutdown
V
Vbb(u rst)
bb(o rst)
I
L
V
bb(u cp)
V bb(under)
ST
Vbb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
Semiconductor Group
12
BTS 410 F2
SMD TO-220AB/5, Opt. E3062 Ordering code
Package and Ordering Code
BTS410F2 E3062A T&R:
Q67060-S6103-A4
All dimensions in mm
Standard TO-220AB/5
Ordering code
BTS 410 F2
Q67060-S6103-A2
Changed since 04.96
Date Change
Mar.
E
maximum rating and diagram
AS
1997 and Z
diagram added
thJC
ESD capability (except Input)
specified to 2kV, R
specified
thJA SMD
TO-220AB/5, Option E3043 Ordering code
I
reduced from 10 to
L(GND high) max
BTS 410 F2 E3043
Q67060-S6103-A3
1 mA
Option Overview table columns for
BTS307/308 added
Fig. 1a: V -spike at V -turn-on
out
bb
added
Semiconductor Group
13
相关型号：
BTS410F2E3062ABUMA1
Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, MOS, PSSO4, GREEN, PLASTIC, TO-263, 5/4 PIN
INFINEON
BTS410G2
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
INFINEON
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